Fairchild/ON Semiconductor FCB20N60TM
- Part Number:
- FCB20N60TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479408-FCB20N60TM
- Description:
- MOSFET N-CH 600V 20A D2PAK
- ECAD Model:
-
- Datasheet:
- FCB20N60TM
Fairchild/ON Semiconductor FCB20N60TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCB20N60TM.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperFET™
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberFCB20N60
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max208W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs190m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Drain Current-Max (Abs) (ID)20A
- Drain-source On Resistance-Max0.19Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)690 mJ
- RoHS StatusROHS3 Compliant
FCB20N60TM Description
SuperFET? MOSFET is first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCB20N60TM Features
● 650 V @TJ = 150 °C
● Typ. RDS(on) = 150 mΩ
● Ultra Low Gate Charge (Typ. Qg = 75 nC)
● Low Effective Output Capacitance (Typ. Coss.eff = 165 pF)
● 100% Avalanche Tested
● RoHS Compliant
FCB20N60TM Applications
● Lighting
● AC-DC Power Supply
● Solar Inverter
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
SuperFET? MOSFET is first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCB20N60TM Features
● 650 V @TJ = 150 °C
● Typ. RDS(on) = 150 mΩ
● Ultra Low Gate Charge (Typ. Qg = 75 nC)
● Low Effective Output Capacitance (Typ. Coss.eff = 165 pF)
● 100% Avalanche Tested
● RoHS Compliant
FCB20N60TM Applications
● Lighting
● AC-DC Power Supply
● Solar Inverter
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
FCB20N60TM More Descriptions
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi FCB20N60TM.
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi FCB20N60TM.
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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