Fairchild/ON Semiconductor FCB070N65S3
- Part Number:
- FCB070N65S3
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554245-FCB070N65S3
- Description:
- MOSFET N-CH 650V 44A D2PAK
- ECAD Model:
-
- Datasheet:
- FCB070N65S3
Fairchild/ON Semiconductor FCB070N65S3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCB070N65S3.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperFET® III
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max312W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation312W
- Case ConnectionDRAIN
- Turn On Delay Time26 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs70m Ω @ 22A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4.4mA
- Input Capacitance (Ciss) (Max) @ Vds3090pF @ 400V
- Current - Continuous Drain (Id) @ 25°C44A Tc
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Turn-Off Delay Time89 ns
- Continuous Drain Current (ID)44A
- Threshold Voltage4.5V
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.07Ohm
- Drain to Source Breakdown Voltage650V
- Max Junction Temperature (Tj)150°C
- Height4.83mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
FCB070N65S3 Description
The ON Semiconductor FCB070N65S3 is the SUPERFET III MOSFET, which is part of ON Semiconductor's brand-new high voltage super junction (SJ) MOSFET family that employs charge balance technology for exceptional low on-resistance and lower gate charge performance.
FCB070N65S3 Features
700 V @ TJ = 150°C
RDS(on) = 62 m (Typ.)
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
100% Avalanche Tested
These Devices are Pb?Free and are RoHS Compliant
FCB070N65S3 Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
The ON Semiconductor FCB070N65S3 is the SUPERFET III MOSFET, which is part of ON Semiconductor's brand-new high voltage super junction (SJ) MOSFET family that employs charge balance technology for exceptional low on-resistance and lower gate charge performance.
FCB070N65S3 Features
700 V @ TJ = 150°C
RDS(on) = 62 m (Typ.)
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
100% Avalanche Tested
These Devices are Pb?Free and are RoHS Compliant
FCB070N65S3 Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
FCB070N65S3 More Descriptions
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK
Trans MOSFET N-CH 650V 44A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 312W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperFET III Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 44A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancetechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
Trans MOSFET N-CH 650V 44A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 312W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperFET III Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 44A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancetechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
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