Fairchild/ON Semiconductor FCA76N60N
- Part Number:
- FCA76N60N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482478-FCA76N60N
- Description:
- MOSFET N-CH 600V 76A TO-3PN
- ECAD Model:
-
- Datasheet:
- FCA76N60N
Fairchild/ON Semiconductor FCA76N60N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCA76N60N.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSupreMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max543W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation543W
- Case ConnectionDRAIN
- Turn On Delay Time34 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs36m Ω @ 38A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds12385pF @ 100V
- Current - Continuous Drain (Id) @ 25°C76A Tc
- Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
- Rise Time24ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time235 ns
- Continuous Drain Current (ID)76A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)228A
- Avalanche Energy Rating (Eas)8022 mJ
- Height20.1mm
- Length15.8mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FCA76N60N Description
After the high voltage super-junction (SJ) technology being developed, FCA76N60N SupreMOS? MOSFET came to being based on a deep trench filling process. This process is what differenciates it from the conventional SJ MOSFETs. Based on the sophisticated technology and process, FCA76N60N is especially tailored to provide lowest Rsp on-resistance, reliable performance, and superior ruggedness. It features small drive power, fast switching, large on-state voltage drop, and small current-carrying sensity. FCA76N60N SupreMOS? MOSFET is ideally suitable for various applications, including solar inverters, AC-DC power supply, etc.
FCA76N60N Features
Typical rise and fall time of 24 ns and 32 ns, respectively
Typical turn-on and turn-off delay time of 34 ns and 235 ns, respectively
Operational temperature of -55 °C to 150 °C
High avalanche energy strength
Available in TO-3PN-3 package
FCA76N60N Applications
PFC (power factor correction)
Server/telecom power
FPD (flat panel display) TV power
ATX (advanced technology extended) power
Industrial power applications
After the high voltage super-junction (SJ) technology being developed, FCA76N60N SupreMOS? MOSFET came to being based on a deep trench filling process. This process is what differenciates it from the conventional SJ MOSFETs. Based on the sophisticated technology and process, FCA76N60N is especially tailored to provide lowest Rsp on-resistance, reliable performance, and superior ruggedness. It features small drive power, fast switching, large on-state voltage drop, and small current-carrying sensity. FCA76N60N SupreMOS? MOSFET is ideally suitable for various applications, including solar inverters, AC-DC power supply, etc.
FCA76N60N Features
Typical rise and fall time of 24 ns and 32 ns, respectively
Typical turn-on and turn-off delay time of 34 ns and 235 ns, respectively
Operational temperature of -55 °C to 150 °C
High avalanche energy strength
Available in TO-3PN-3 package
FCA76N60N Applications
PFC (power factor correction)
Server/telecom power
FPD (flat panel display) TV power
ATX (advanced technology extended) power
Industrial power applications
FCA76N60N More Descriptions
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P
FAIRCHILD SEMICONDUCTOR FCA76N60N Power MOSFET, N Channel, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
Aluminum Electrolytic Capacitors 470μF Radial, Can - SMD ±20% Tape & Reel (TR) FK 0.413 10.50mm Surface Mount Automotive 850mA CAP ALUM 470UF 20% 25V SMD
MOSFET, N CH, 600V, 76A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3PN; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:228A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FAIRCHILD SEMICONDUCTOR FCA76N60N Power MOSFET, N Channel, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
Aluminum Electrolytic Capacitors 470μF Radial, Can - SMD ±20% Tape & Reel (TR) FK 0.413 10.50mm Surface Mount Automotive 850mA CAP ALUM 470UF 20% 25V SMD
MOSFET, N CH, 600V, 76A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3PN; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:228A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 April 2024
DRV8870DDAR H-Bridge Motor Driver: Alternatives, Functional Modes, Features and More
Ⅰ. Overview of DRV8870DDARⅡ. Device functional modesⅢ. Technical parameters of DRV8870DDARⅣ. What are the power consumption characteristics of DRV8870DDAR?Ⅴ. DRV8870DDAR circuit diagramⅥ. Power supply recommendations of DRV8870DDARⅦ. Functional... -
22 April 2024
74LS161 4-BIt Synchronous Counter Functions and Applications
Ⅰ. Introduction to 74LS161Ⅱ. Pin arrangement of 74LS161Ⅲ. Working principle of 74LS161Ⅳ. 74LS161 function tableⅤ. Basic applications of 74LS161Ⅵ. How to choose the appropriate 74LS161 counter?Ⅶ. The difference... -
23 April 2024
LNK304PN Manufacturer, Highlights, Functions and Other Details
Ⅰ. LNK304PN overviewⅡ. Manufacturer of LNK304PNⅢ. Highlights of LNK304PNⅣ. Pin functional description of LNK304PNⅤ. Functions of LNK304PNⅥ. How to judge the quality of LNK304PNⅦ. How to implement the... -
23 April 2024
LM331 Frequency to Voltage Converter Functions, Working Principle and Application Circuit
Ⅰ. LM331 descriptionⅡ. Functions and roles of LM331Ⅲ. LM331 internal block diagramⅣ. Working principle of LM331Ⅴ. Application circuit of LM331Ⅵ. Specific applications of LM331Ⅶ. Precautions for using LM331The...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.