Fairchild/ON Semiconductor FCA20N60F
- Part Number:
- FCA20N60F
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482703-FCA20N60F
- Description:
- MOSFET N-CH 600V 20A TO-3PN
- Datasheet:
- FCA20N60F
Fairchild/ON Semiconductor FCA20N60F technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCA20N60F.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperFET™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberFCA20N60
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Turn On Delay Time62 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs190m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Rise Time140ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time230 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)60A
- Avalanche Energy Rating (Eas)690 mJ
- Height20.1mm
- Length16.2mm
- Width5mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The FCA20N60F is a 600 V, 20 A, 190 m N-Channel SuperFET? FRFET? MOSFET. Fairchild Semiconductor's SuperFET? MOSFET family is the first generation of high voltage super-junction (SJ) MOSFETs that use charge balance technology for remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are well suited to switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFET FRFET? MOSFETs can eliminate extraneous components and improve system reliability.
Features
? Ultra Low Gate Charge (Typ. Qg = 75 nC ) ? Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) ? 100% Avalanche Tested ? RoHS Compliant ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 150 m? ? Fast Recovery Type (Typ. Trr = 160 ns )
Applications
? LCD / LED / PDP TV ? Solar Inverter ? AC-DC Power Supply ? Automotive electronics ? Switching devices
The FCA20N60F is a 600 V, 20 A, 190 m N-Channel SuperFET? FRFET? MOSFET. Fairchild Semiconductor's SuperFET? MOSFET family is the first generation of high voltage super-junction (SJ) MOSFETs that use charge balance technology for remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are well suited to switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFET FRFET? MOSFETs can eliminate extraneous components and improve system reliability.
Features
? Ultra Low Gate Charge (Typ. Qg = 75 nC ) ? Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) ? 100% Avalanche Tested ? RoHS Compliant ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 150 m? ? Fast Recovery Type (Typ. Trr = 160 ns )
Applications
? LCD / LED / PDP TV ? Solar Inverter ? AC-DC Power Supply ? Automotive electronics ? Switching devices
FCA20N60F More Descriptions
N-Channel Power MOSFET, SuperFET®, FRFET®, 600V, 20A, 190mΩ, TO-3P
Aluminum Electrolytic Capacitors 330μF Radial, Can - SMD ±20% Tape & Reel (TR) FK 0.315 8.00mm Surface Mount Automotive CAP ALUM 330UF 20% 6.3V SMD
MOSFET, N, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):150mohm; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:TO-3PN; Power Dissipation Pd:208W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Aluminum Electrolytic Capacitors 330μF Radial, Can - SMD ±20% Tape & Reel (TR) FK 0.315 8.00mm Surface Mount Automotive CAP ALUM 330UF 20% 6.3V SMD
MOSFET, N, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):150mohm; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:TO-3PN; Power Dissipation Pd:208W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
The three parts on the right have similar specifications to FCA20N60F.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusLead FreeVoltage - Rated DCCurrent RatingRadiation HardeningSupplier Device PackageDrain to Source Voltage (Vdss)Contact PlatingResistanceCase ConnectionThreshold VoltageNominal VgsREACH SVHCView Compare
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FCA20N60FACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.401gSILICON-55°C~150°C TJTubeSuperFET™2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDFCA20N60Not Qualified1208W TcSingleENHANCEMENT MODE208W62 nsN-ChannelSWITCHING190m Ω @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V140ns10V±30V65 ns230 ns20A30V600V60A690 mJ20.1mm16.2mm5mmROHS3 CompliantLead Free------------
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ACTIVE, NOT REC (Last Updated: 2 days ago)43 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.401gSILICON-55°C~150°C TJTubeSuperFET™-e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)-MOSFET (Metal Oxide)--FCA20N60-1208W TcSingleENHANCEMENT MODE208W62 nsN-ChannelSWITCHING190m Ω @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V140ns10V±30V65 ns230 ns20A30V600V60A690 mJ---ROHS3 CompliantLead Free600V20ANo--------
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---Through HoleTO-3P-3, SC-65-3----55°C~150°C TJTubeSuperFET™2013--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--FCA20N60--208W Tc----N-Channel-190mOhm @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V-10V±30V---------------TO-3PN600V------
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ACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.401gSILICON-55°C~150°C TJTubeSupreMOS™2009e3yesActive1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)----1205W TcSingleENHANCEMENT MODE205W16.9 nsN-ChannelSWITCHING165m Ω @ 11A, 10V4V @ 250μA1950pF @ 100V22A Tc45nC @ 10V16.7s10V±30V4 ns49 ns22A30V650V66A672 mJ20.1mm15.8mm5mmROHS3 CompliantLead Free--No-600VTin165mOhmDRAIN3V3 VNo SVHC
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