Fairchild/ON Semiconductor FCA20N60

Name: FCA20N60
Brand: Fairchild/ON Semiconductor
SKU: 2850559-FCA20N60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FCA20N60

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2850559-FCA20N60

Description:: MOSFET N-CH 600V 20A TO-3P

ECAD Model:

Datasheet:: FCA20N60

Specifications

Fairchild/ON Semiconductor FCA20N60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCA20N60.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
43 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Base Part Number
FCA20N60
Number of Elements
1
Power Dissipation-Max
208W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
208W
Turn On Delay Time
62 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3080pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Rise Time
140ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
65 ns
Turn-Off Delay Time
230 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
60A
Avalanche Energy Rating (Eas)
690 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FCA20N60 Description
The SuperFET? MOSFET family is ON Semiconductor's first generation of high-voltage super-junction (SJ) MOSFETs that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are ideal for switching power applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power.

FCA20N60 Features
650V @ TJ = 150°C
Typ. RDS(on) = 150 mΩ
Ultra Low Gate Charge (Typ. Qg = 75 nC )
Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
100% Avalanche Tested

FCA20N60 Applications
Solar Inverter
AC-DC Power Supply

FCA20N60 More Descriptions

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-3P
MOSFET, N, TO-3P; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.15ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3P; Current, Idm pulse:60A; Power, Pd:208W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:600V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Product Comparison

The three parts on the right have similar specifications to FCA20N60.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Published

Drain to Source Voltage (Vdss)

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Height

Length

Width

Contact Plating

Resistance

Case Connection

Threshold Voltage

Nominal Vgs

REACH SVHC

View Compare
FCA20N60

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

43 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

SuperFET™

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

600V

MOSFET (Metal Oxide)

20A

FCA20N60

1

208W Tc

Single

ENHANCEMENT MODE

208W

62 ns

N-Channel

SWITCHING

190m Ω @ 10A, 10V

5V @ 250μA

3080pF @ 25V

20A Tc

98nC @ 10V

140ns

10V

±30V

65 ns

230 ns

20A

30V

600V

60A

690 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FCA20N60FS

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-

-55°C~150°C TJ

Tube

SuperFET™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

FCA20N60

-

208W Tc

-

-

-

-

N-Channel

-

190mOhm @ 10A, 10V

5V @ 250μA

3080pF @ 25V

20A Tc

98nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

TO-3PN

2013

600V

-

-

-

-

-

-

-

-

-

-

-

-

-

FCA20N60 vs FCA20N60FS
FCA20N60F

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

12 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

SuperFET™

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-

MOSFET (Metal Oxide)

-

FCA20N60

1

208W Tc

Single

ENHANCEMENT MODE

208W

62 ns

N-Channel

SWITCHING

190m Ω @ 10A, 10V

5V @ 250μA

3080pF @ 25V

20A Tc

98nC @ 10V

140ns

10V

±30V

65 ns

230 ns

20A

30V

600V

60A

690 mJ

-

ROHS3 Compliant

Lead Free

-

2013

-

FET General Purpose Power

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

20.1mm

16.2mm

5mm

-

-

-

-

-

-

FCA20N60 vs FCA20N60F
FCA22N60N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

12 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

SupreMOS™

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

-

-

1

205W Tc

Single

ENHANCEMENT MODE

205W

16.9 ns

N-Channel

SWITCHING

165m Ω @ 11A, 10V

4V @ 250μA

1950pF @ 100V

22A Tc

45nC @ 10V

16.7s

10V

±30V

4 ns

49 ns

22A

30V

650V

66A

672 mJ

No

ROHS3 Compliant

Lead Free

-

2009

600V

FET General Purpose Power

-

-

-

20.1mm

15.8mm

5mm

Tin

165mOhm

DRAIN

3V

3 V

No SVHC

FCA20N60 vs FCA22N60N