Microchip Technology DN2540N5-G
- Part Number:
- DN2540N5-G
- Manufacturer:
- Microchip Technology
- Ventron No:
- 2479834-DN2540N5-G
- Description:
- MOSFET N-CH 400V 500MA 3TO-220
- Datasheet:
- DN2540N5-G
Microchip Technology DN2540N5-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology DN2540N5-G.
- Factory Lead Time5 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max15W Tc
- Element ConfigurationSingle
- Power Dissipation15W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25 Ω @ 120mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C500mA Tj
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)0V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)500mA
- Threshold Voltage-1.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.5A
- Drain to Source Breakdown Voltage400V
- Pulsed Drain Current-Max (IDM)0.5A
- FET FeatureDepletion Mode
- Height22.86mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DN2540N5-G More Descriptions
MOSFET Housing type: TO-220 Polarity: N Variants: Depletion mode Power dissipation: 15 W
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3 Tab) TO-220 Tube
MOSFET, DEPLETION-MODE, 400V, 25 Ohm3 TO-220 TUBE | Microchip Technology Inc. DN2540N5-G
DN2540 Series 400 V 500 mA N-Channel Depletion-Mode Vertical DMOS FETs -TO-220-3
MICROCHIP - DN2540N5-G - MOSFET, N CH, 400V, 0.5A, TO-220AB-3
MOSFET, N CH, 400V, 0.5A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 17ohm; Rds(on) Test Voltage Vgs: 0V; Threshold Voltage Vgs: -; Po
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3 Tab) TO-220 Tube
MOSFET, DEPLETION-MODE, 400V, 25 Ohm3 TO-220 TUBE | Microchip Technology Inc. DN2540N5-G
DN2540 Series 400 V 500 mA N-Channel Depletion-Mode Vertical DMOS FETs -TO-220-3
MICROCHIP - DN2540N5-G - MOSFET, N CH, 400V, 0.5A, TO-220AB-3
MOSFET, N CH, 400V, 0.5A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 17ohm; Rds(on) Test Voltage Vgs: 0V; Threshold Voltage Vgs: -; Po
The three parts on the right have similar specifications to DN2540N5-G.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionJESD-30 CodeDrain to Source Voltage (Vdss)Feedback Cap-Max (Crss)ConfigurationContact PlatingTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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DN2540N5-G5 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON-55°C~150°C TJTube2013e3Active1 (Unlimited)3EAR99MATTE TINLOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)1115W TcSingle15WDRAIN10 nsN-ChannelSWITCHING25 Ω @ 120mA, 0V300pF @ 25V500mA Tj15ns0V±20V20 ns15 ns500mA-1.5VTO-220AB20V0.5A400V0.5ADepletion Mode22.86mm10.67mm4.83mmNo SVHCNoROHS3 CompliantLead Free-----------
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5 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2013-Active1 (Unlimited)3EAR99---MOSFET (Metal Oxide)111W TcSingle--10 nsN-ChannelSWITCHING25 Ω @ 120mA, 0V300pF @ 25V120mA Tj15ns0V±20V20 ns15 ns120mA--20V---Depletion Mode5.33mm5.21mm4.19mm--ROHS3 Compliant-BOTTOMO-PBCY-T3400V5 pF------
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5 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2013-Active1 (Unlimited)3EAR99---MOSFET (Metal Oxide)111W Tc----N-ChannelSWITCHING25 Ω @ 120mA, 0V300pF @ 25V120mA Tj-0V±20V--120mA------Depletion Mode-----ROHS3 Compliant-BOTTOM-350V5 pFSINGLE WITH BUILT-IN DIODE-----
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5 WeeksSurface MountSurface MountTO-243AA352.786812mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3EAR99-LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)111.6W TcSingle1.6WDRAIN10 nsN-ChannelSWITCHING25 Ω @ 120mA, 0V300pF @ 25V170mA Tj15ns0V±20V15 ns15 ns170mA--20V-400V0.5ADepletion Mode1.6mm4.6mm2.6mm--ROHS3 CompliantLead Free-----TinFLAT26040Not Qualified
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