DN2470K4-G

Microchip Technology DN2470K4-G

Part Number:
DN2470K4-G
Manufacturer:
Microchip Technology
Ventron No:
2484648-DN2470K4-G
Description:
MOSFET N-CH 700V 0.17A 3DPAK
ECAD Model:
Datasheet:
DN2470K4-G

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Specifications
Microchip Technology DN2470K4-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology DN2470K4-G.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    3.949996g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    DN2470
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    42 Ω @ 100mA, 0V
  • Input Capacitance (Ciss) (Max) @ Vds
    540pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    170mA Tj
  • Rise Time
    45ns
  • Drive Voltage (Max Rds On,Min Rds On)
    0V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    60 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    170mA
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    700V
  • Pulsed Drain Current-Max (IDM)
    0.5A
  • FET Feature
    Depletion Mode
  • Height
    2.5146mm
  • Length
    6.73mm
  • Width
    6.1mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DN2470K4-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 540pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 170mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 700V, and this device has a drainage-to-source breakdown voltage of 700VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 0.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (0V), this device contributes to a reduction in overall power consumption.

DN2470K4-G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.5A.


DN2470K4-G Applications
There are a lot of Microchip Technology
DN2470K4-G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DN2470K4-G More Descriptions
Transistor MOSFET N-CH 700V 0.17A 3-Pin (2 Tab) TO-252
Power MOSFET, N Channel, 700 V, 170 mA, 42 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
MOSFET, 700V, 0.17A, 150DEG C, 2.5W; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 42ohm; Rds(on) Test Voltage Vgs: 0V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 0.17A I(D), 700V, 42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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