DMP6023LSS-13

Diodes Incorporated DMP6023LSS-13

Part Number:
DMP6023LSS-13
Manufacturer:
Diodes Incorporated
Ventron No:
2478624-DMP6023LSS-13
Description:
MOSFET P-CH 60V 6.6A 8-SO
ECAD Model:
Datasheet:
DMP6023LSS-13

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Specifications
Diodes Incorporated DMP6023LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP6023LSS-13.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Capacitance
    2.569nF
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.2W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    6 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2569pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    53.1nC @ 10V
  • Rise Time
    7.1ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    62 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    6.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.025Ohm
  • Drain to Source Breakdown Voltage
    -60V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Avalanche Energy Rating (Eas)
    62.9 mJ
  • RoHS Status
    ROHS3 Compliant
Description
DMP6023LSS-13 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 62.9 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2569pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.6A amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 50A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMP6023LSS-13 Features
the avalanche energy rating (Eas) is 62.9 mJ
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 60V drain to source voltage (Vdss)


DMP6023LSS-13 Applications
There are a lot of Diodes Incorporated
DMP6023LSS-13 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP6023LSS-13 More Descriptions
Mosfet, P-Ch, 60V, 6.6A, 150Deg C, 1.2W Rohs Compliant: Yes |Diodes Inc. DMP6023LSS-13
Single P-Channel 60 V 1.6 W 53.1 nC Silicon Surface Mount Mosfet - SOIC-8
Trans MOSFET P-CH 60V 6.6A 8-Pin SOIC T/R
Product Comparison
The three parts on the right have similar specifications to DMP6023LSS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Capacitance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Weight
    Reach Compliance Code
    JESD-30 Code
    Element Configuration
    Case Connection
    Drain Current-Max (Abs) (ID)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Series
    DS Breakdown Voltage-Min
    View Compare
  • DMP6023LSS-13
    DMP6023LSS-13
    23 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    2.569nF
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.2W Ta
    ENHANCEMENT MODE
    6 ns
    P-Channel
    SWITCHING
    25m Ω @ 5A, 10V
    3V @ 250μA
    2569pF @ 30V
    6.6A Ta
    53.1nC @ 10V
    7.1ns
    60V
    4.5V 10V
    ±20V
    62 ns
    110 ns
    6.6A
    20V
    0.025Ohm
    -60V
    50A
    62.9 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP6023LE-13
    22 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn) - annealed
    HIGH RELIABILITY
    2.569nF
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    -
    1
    2W Ta
    ENHANCEMENT MODE
    6 ns
    P-Channel
    SWITCHING
    28m Ω @ 5A, 10V
    3V @ 250μA
    2569pF @ 30V
    7A Ta 18.2A Tc
    53.1nC @ 10V
    7.1ns
    60V
    4.5V 10V
    ±20V
    62 ns
    110 ns
    18.2A
    20V
    0.028Ohm
    -60V
    50A
    62.9 mJ
    ROHS3 Compliant
    188.014037mg
    not_compliant
    R-PDSO-G4
    Single
    DRAIN
    7A
    150°C
    1.8mm
    6.5mm
    3.5mm
    -
    -
  • DMP6023LFGQ-13
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    SILICON
    -55°C~155°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1W Ta
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    25m Ω @ 5A, 10V
    3V @ 250μA
    2569pF @ 30V
    7.7A Ta
    53.1nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    7.7A
    -
    0.025Ohm
    -
    -
    -
    ROHS3 Compliant
    -
    -
    S-PDSO-N5
    -
    DRAIN
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
    60V
  • DMP6110SSSQ-13
    23 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1.5W Ta
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    110m Ω @ 4.5A, 10V
    3V @ 250μA
    1030pF @ 30V
    -
    19.4nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.11Ohm
    -
    19A
    15.4 mJ
    ROHS3 Compliant
    -
    -
    R-PDSO-G8
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
    60V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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