Diodes Incorporated DMP6023LSS-13
- Part Number:
- DMP6023LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478624-DMP6023LSS-13
- Description:
- MOSFET P-CH 60V 6.6A 8-SO
- Datasheet:
- DMP6023LSS-13
Diodes Incorporated DMP6023LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP6023LSS-13.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- Capacitance2.569nF
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.2W Ta
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2569pF @ 30V
- Current - Continuous Drain (Id) @ 25°C6.6A Ta
- Gate Charge (Qg) (Max) @ Vgs53.1nC @ 10V
- Rise Time7.1ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)62 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)6.6A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.025Ohm
- Drain to Source Breakdown Voltage-60V
- Pulsed Drain Current-Max (IDM)50A
- Avalanche Energy Rating (Eas)62.9 mJ
- RoHS StatusROHS3 Compliant
DMP6023LSS-13 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 62.9 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2569pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.6A amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 50A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP6023LSS-13 Features
the avalanche energy rating (Eas) is 62.9 mJ
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 60V drain to source voltage (Vdss)
DMP6023LSS-13 Applications
There are a lot of Diodes Incorporated
DMP6023LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 62.9 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2569pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.6A amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 50A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP6023LSS-13 Features
the avalanche energy rating (Eas) is 62.9 mJ
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 60V drain to source voltage (Vdss)
DMP6023LSS-13 Applications
There are a lot of Diodes Incorporated
DMP6023LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP6023LSS-13 More Descriptions
Mosfet, P-Ch, 60V, 6.6A, 150Deg C, 1.2W Rohs Compliant: Yes |Diodes Inc. DMP6023LSS-13
Single P-Channel 60 V 1.6 W 53.1 nC Silicon Surface Mount Mosfet - SOIC-8
Trans MOSFET P-CH 60V 6.6A 8-Pin SOIC T/R
Single P-Channel 60 V 1.6 W 53.1 nC Silicon Surface Mount Mosfet - SOIC-8
Trans MOSFET P-CH 60V 6.6A 8-Pin SOIC T/R
The three parts on the right have similar specifications to DMP6023LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureCapacitanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusWeightReach Compliance CodeJESD-30 CodeElement ConfigurationCase ConnectionDrain Current-Max (Abs) (ID)Max Junction Temperature (Tj)HeightLengthWidthSeriesDS Breakdown Voltage-MinView Compare
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DMP6023LSS-1323 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITY2.569nFMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE11.2W TaENHANCEMENT MODE6 nsP-ChannelSWITCHING25m Ω @ 5A, 10V3V @ 250μA2569pF @ 30V6.6A Ta53.1nC @ 10V7.1ns60V4.5V 10V±20V62 ns110 ns6.6A20V0.025Ohm-60V50A62.9 mJROHS3 Compliant-------------
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22 WeeksSurface MountSurface MountTO-261-4, TO-261AA-SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)4EAR99Matte Tin (Sn) - annealedHIGH RELIABILITY2.569nFMOSFET (Metal Oxide)DUALGULL WING260301-12W TaENHANCEMENT MODE6 nsP-ChannelSWITCHING28m Ω @ 5A, 10V3V @ 250μA2569pF @ 30V7A Ta 18.2A Tc53.1nC @ 10V7.1ns60V4.5V 10V±20V62 ns110 ns18.2A20V0.028Ohm-60V50A62.9 mJROHS3 Compliant188.014037mgnot_compliantR-PDSO-G4SingleDRAIN7A150°C1.8mm6.5mm3.5mm--
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23 WeeksSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~155°C TJTape & Reel (TR)2015e3Active1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE-1W TaENHANCEMENT MODE-P-ChannelSWITCHING25m Ω @ 5A, 10V3V @ 250μA2569pF @ 30V7.7A Ta53.1nC @ 10V-60V4.5V 10V±20V--7.7A-0.025Ohm---ROHS3 Compliant--S-PDSO-N5-DRAIN-----Automotive, AEC-Q10160V
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23 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)-e3Active1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE-1.5W TaENHANCEMENT MODE-P-ChannelSWITCHING110m Ω @ 4.5A, 10V3V @ 250μA1030pF @ 30V-19.4nC @ 10V-60V4.5V 10V±20V----0.11Ohm-19A15.4 mJROHS3 Compliant--R-PDSO-G8-------Automotive, AEC-Q10160V
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