Diodes Incorporated DMP2066LSN-7

Name: DMP2066LSN-7
Brand: Diodes Incorporated
SKU: 2480629-DMP2066LSN-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP2066LSN-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2480629-DMP2066LSN-7

Description:: MOSFET P-CH 20V 4.6A SC59-3

ECAD Model:

Datasheet:: DMP2066LSN-7

Specifications

Diodes Incorporated DMP2066LSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2066LSN-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.25W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
4.4 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
40m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.6A Ta
Gate Charge (Qg) (Max) @ Vgs
10.1nC @ 4.5V
Rise Time
9.9ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
9.9 ns
Turn-Off Delay Time
28 ns
Continuous Drain Current (ID)
4.6A
Gate to Source Voltage (Vgs)
12V
Drain-source On Resistance-Max
0.04Ohm
Drain to Source Breakdown Voltage
-20V
Height
1.3mm
Length
3.1mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMP2066LSN-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 820pF @ 15V.This device has a continuous drain current (ID) of [4.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

DMP2066LSN-7 Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 28 ns
a 20V drain to source voltage (Vdss)

DMP2066LSN-7 Applications
There are a lot of Diodes Incorporated
DMP2066LSN-7 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

DMP2066LSN-7 More Descriptions

Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
P-Channel 20 V 40 mOhm Enhancement Mode Mosfet - SC-59
Trans MOSFET P-CH 20V 4.6A Automotive 3-Pin SC-59 T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC BUFFER NON-INVERT 2.7 V SOT5

Product Comparison

The three parts on the right have similar specifications to DMP2066LSN-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Rds On Max

Series

JESD-30 Code

Configuration

Case Connection

Transistor Application

DS Breakdown Voltage-Min

View Compare
DMP2066LSN-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

4.4 ns

P-Channel

40m Ω @ 4.6A, 4.5V

1.2V @ 250μA

820pF @ 15V

4.6A Ta

10.1nC @ 4.5V

9.9ns

20V

2.5V 4.5V

±12V

9.9 ns

28 ns

4.6A

12V

0.04Ohm

-20V

1.3mm

3.1mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
DMP2007UFG-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

-

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

2.3W Ta

-

-

-

-

P-Channel

5.5mOhm @ 15A, 10V

1.3V @ 250μA

4621pF @ 10V

18A Ta 40A Tc

85nC @ 10V

-

20V

2.5V 10V

±12V

-

-

40A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

PowerDI3333-8

150°C

-55°C

4.621nF

5.5 mΩ

-

-

-

-

-

-

DMP2066LSN-7 vs DMP2007UFG-13
DMP2170U-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

780mW Ta

-

-

-

-

P-Channel

90m Ω @ 3.5A, 4.5V

1.25V @ 250μA

303pF @ 10V

3.1A Ta

7.8nC @ 10V

-

20V

2.5V 4.5V

±12V

-

-

3.1A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

Automotive, AEC-Q101

-

-

-

-

-

DMP2066LSN-7 vs DMP2170U-13
DMP2023UFDF-13

Diodes Incorporated

22 Weeks

Surface Mount

Surface Mount

6-UDFN Exposed Pad

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

-

Active

1 (Unlimited)

6

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

-

1

-

730mW Ta

-

ENHANCEMENT MODE

-

-

P-Channel

27m Ω @ 7A, 4.5V

1V @ 250μA

1837pF @ 15V

7.6A Ta

27nC @ 4.5V

-

20V

1.5V 4.5V

±8V

-

-

7.6A

-

0.027Ohm

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

S-PDSO-N6

SINGLE WITH BUILT-IN DIODE

DRAIN

SWITCHING

20V

DMP2066LSN-7 vs DMP2023UFDF-13