Diodes Incorporated DMP2023UFDF-7
- Part Number:
- DMP2023UFDF-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483436-DMP2023UFDF-7
- Description:
- MOSFET P-CH 20V 7.6A
- Datasheet:
- DMP2023UFDF-7
Diodes Incorporated DMP2023UFDF-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2023UFDF-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-UDFN Exposed Pad
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeS-PDSO-N6
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max730mW Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs27m Ω @ 7A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1837pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.6A Ta
- Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Continuous Drain Current (ID)7.6A
- Drain-source On Resistance-Max0.027Ohm
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
DMP2023UFDF-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1837pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
DMP2023UFDF-7 Features
a continuous drain current (ID) of 7.6A
a 20V drain to source voltage (Vdss)
DMP2023UFDF-7 Applications
There are a lot of Diodes Incorporated
DMP2023UFDF-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1837pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
DMP2023UFDF-7 Features
a continuous drain current (ID) of 7.6A
a 20V drain to source voltage (Vdss)
DMP2023UFDF-7 Applications
There are a lot of Diodes Incorporated
DMP2023UFDF-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP2023UFDF-7 More Descriptions
Mosfet, P-Ch, 20V, 7.6A, Udfn2020 Rohs Compliant: Yes |Diodes Inc. DMP2023UFDF-7
Single P-Channel 20 V 90 mOhm 27 nC 0.73 W Silicon SMT Mosfet - UDFN-6
Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN2020 T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
Single P-Channel 20 V 90 mOhm 27 nC 0.73 W Silicon SMT Mosfet - UDFN-6
Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN2020 T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
The three parts on the right have similar specifications to DMP2023UFDF-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusNumber of PinsPbfree CodeAdditional FeatureSubcategoryPin CountNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxWeightHeightLengthWidthREACH SVHCLead FreeView Compare
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DMP2023UFDF-716 WeeksSurface MountSurface Mount6-UDFN Exposed PadSILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUALNO LEAD26030S-PDSO-N61SINGLE WITH BUILT-IN DIODE730mW TaENHANCEMENT MODEDRAINP-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V20V1.5V 4.5V±8V7.6A0.027Ohm20VROHS3 Compliant---------------------------
-
19 WeeksSurface MountSurface Mount3-XFDFNSILICON-55°C~150°C TJTape & Reel (TR)2011e4Active1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)BOTTOMNO LEAD26040-1-350mW TaENHANCEMENT MODEDRAINP-ChannelSWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA175pF @ 15V200mA Ta-20V1.2V 4.5V±10V200mA5.5Ohm-ROHS3 Compliant3yesHIGH RELIABILITY, LOW THRESHOLDOther Transistors31Single7.7 ns19.3ns31.5 ns25.9 ns10V0.2A-20V20 pF-----------
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17 WeeksSurface MountSurface Mount8-PowerVDFN--55°C~150°C TJTape & Reel (TR)2007-Active1 (Unlimited)---MOSFET (Metal Oxide)-------2.3W Ta--P-Channel-5.5mOhm @ 15A, 10V1.3V @ 250μA4621pF @ 10V18A Ta 40A Tc85nC @ 10V20V2.5V 10V±12V40A--ROHS3 Compliant8--------------PowerDI3333-8150°C-55°C4.621nF5.5 mΩ------
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19 WeeksSurface MountSurface Mount8-PowerVDFNSILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)5EAR99Matte Tin (Sn)MOSFET (Metal Oxide)DUALNO LEAD26040S-PDSO-N51-2.4W Ta 41W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V20V1.5V 4.5V±8V54A--ROHS3 Compliant8yes-Other Transistors-1Single22 ns33ns124 ns291 ns8V--20V------72.007789mg850μm3.35mm3.35mmNo SVHCLead Free
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