DMP2023UFDF-7

Diodes Incorporated DMP2023UFDF-7

Part Number:
DMP2023UFDF-7
Manufacturer:
Diodes Incorporated
Ventron No:
2483436-DMP2023UFDF-7
Description:
MOSFET P-CH 20V 7.6A
ECAD Model:
Datasheet:
DMP2023UFDF-7

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Specifications
Diodes Incorporated DMP2023UFDF-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2023UFDF-7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-UDFN Exposed Pad
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    S-PDSO-N6
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    730mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 7A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1837pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±8V
  • Continuous Drain Current (ID)
    7.6A
  • Drain-source On Resistance-Max
    0.027Ohm
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
DMP2023UFDF-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1837pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).

DMP2023UFDF-7 Features
a continuous drain current (ID) of 7.6A
a 20V drain to source voltage (Vdss)


DMP2023UFDF-7 Applications
There are a lot of Diodes Incorporated
DMP2023UFDF-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP2023UFDF-7 More Descriptions
Mosfet, P-Ch, 20V, 7.6A, Udfn2020 Rohs Compliant: Yes |Diodes Inc. DMP2023UFDF-7
Single P-Channel 20 V 90 mOhm 27 nC 0.73 W Silicon SMT Mosfet - UDFN-6
Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN2020 T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
Product Comparison
The three parts on the right have similar specifications to DMP2023UFDF-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Number of Pins
    Pbfree Code
    Additional Feature
    Subcategory
    Pin Count
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    Weight
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    View Compare
  • DMP2023UFDF-7
    DMP2023UFDF-7
    16 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    30
    S-PDSO-N6
    1
    SINGLE WITH BUILT-IN DIODE
    730mW Ta
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    27m Ω @ 7A, 4.5V
    1V @ 250μA
    1837pF @ 15V
    7.6A Ta
    27nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    7.6A
    0.027Ohm
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP210DUFB4-7B
    19 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    -
    1
    -
    350mW Ta
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    5 Ω @ 100mA, 4.5V
    1V @ 250μA
    175pF @ 15V
    200mA Ta
    -
    20V
    1.2V 4.5V
    ±10V
    200mA
    5.5Ohm
    -
    ROHS3 Compliant
    3
    yes
    HIGH RELIABILITY, LOW THRESHOLD
    Other Transistors
    3
    1
    Single
    7.7 ns
    19.3ns
    31.5 ns
    25.9 ns
    10V
    0.2A
    -20V
    20 pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP2007UFG-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.3W Ta
    -
    -
    P-Channel
    -
    5.5mOhm @ 15A, 10V
    1.3V @ 250μA
    4621pF @ 10V
    18A Ta 40A Tc
    85nC @ 10V
    20V
    2.5V 10V
    ±12V
    40A
    -
    -
    ROHS3 Compliant
    8
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PowerDI3333-8
    150°C
    -55°C
    4.621nF
    5.5 mΩ
    -
    -
    -
    -
    -
    -
  • DMP2008UFG-7
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    40
    S-PDSO-N5
    1
    -
    2.4W Ta 41W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    8m Ω @ 12A, 4.5V
    1V @ 250μA
    6909pF @ 10V
    14A Ta 54A Tc
    72nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    54A
    -
    -
    ROHS3 Compliant
    8
    yes
    -
    Other Transistors
    -
    1
    Single
    22 ns
    33ns
    124 ns
    291 ns
    8V
    -
    -20V
    -
    -
    -
    -
    -
    -
    72.007789mg
    850μm
    3.35mm
    3.35mm
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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