Diodes Incorporated DMN65D8LQ-7

Name: DMN65D8LQ-7
Brand: Diodes Incorporated
SKU: 2850127-DMN65D8LQ-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN65D8LQ-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2850127-DMN65D8LQ-7

Description:: MOSFET N-CH 60V SOT23

ECAD Model:

Datasheet:: DMN65D8LQ-7

Specifications

Diodes Incorporated DMN65D8LQ-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN65D8LQ-7.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
370mW Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Current - Continuous Drain (Id) @ 25°C
310mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
310mA
RoHS Status
ROHS3 Compliant

Description

DMN65D8LQ-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 22pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 310mA.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

DMN65D8LQ-7 Features
a continuous drain current (ID) of 310mA
a 60V drain to source voltage (Vdss)

DMN65D8LQ-7 Applications
There are a lot of Diodes Incorporated
DMN65D8LQ-7 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

DMN65D8LQ-7 More Descriptions

Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 60V, 0.31A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN65D8LQ-7
In a Tube of 48, Power Integrations TOP267KG, AC-DC Converter 7A, 5 V dc 11-Pin, eSOP-12
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor

Product Comparison

The three parts on the right have similar specifications to DMN65D8LQ-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Series

Surface Mount

Transistor Element Material

Number of Terminations

Additional Feature

Subcategory

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
DMN65D8LQ-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

370mW Ta

N-Channel

3 Ω @ 115mA, 10V

2V @ 250μA

22pF @ 25V

310mA Ta

0.87nC @ 10V

60V

5V 10V

±20V

310mA

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN601WKQ-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-65°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

200mW Ta

N-Channel

2 Ω @ 500mA, 10V

2.5V @ 1mA

50pF @ 25V

-

-

60V

4.5V 10V

±20V

-

ROHS3 Compliant

Automotive, AEC-Q101

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN65D8LQ-7 vs DMN601WKQ-13
DMN6040SVTQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1.2W Ta

N-Channel

44m Ω @ 4.3A, 10V

3V @ 250μA

1287pF @ 25V

5A Ta

22.4nC @ 10V

60V

4.5V 10V

±20V

5A

ROHS3 Compliant

Automotive, AEC-Q101

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN65D8LQ-7 vs DMN6040SVTQ-13
DMN65D8LFB-7

Diodes Incorporated

23 Weeks

-

Surface Mount

3-UFDFN

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

yes

Active

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

260

40

430mW Ta

N-Channel

3 Ω @ 115mA, 10V

2V @ 250μA

25pF @ 25V

260mA Ta

-

60V

5V 10V

±20V

-

ROHS3 Compliant

-

YES

SILICON

3

HIGH RELIABILITY

FET General Purpose Power

BOTTOM

NO LEAD

3

R-PBCC-N3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

0.4A

4Ohm

60V

DMN65D8LQ-7 vs DMN65D8LFB-7