Diodes Incorporated DMN62D0LFB-7
- Part Number:
- DMN62D0LFB-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3586491-DMN62D0LFB-7
- Description:
- MOSFET N-CH 60V X2-DFN1006-3
- Datasheet:
- DMN62D0LFB-7
Diodes Incorporated DMN62D0LFB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN62D0LFB-7.
- Factory Lead Time16 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max470mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation470mW
- Case ConnectionDRAIN
- Turn On Delay Time3.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2 Ω @ 100mA, 4V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds32pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.45nC @ 4.5V
- Rise Time3.4ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4V
- Vgs (Max)±20V
- Fall Time (Typ)16.3 ns
- Turn-Off Delay Time26.4 ns
- Continuous Drain Current (ID)100mA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max2Ohm
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)6 pF
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN62D0LFB-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 32pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4V).
DMN62D0LFB-7 Features
a continuous drain current (ID) of 100mA
the turn-off delay time is 26.4 ns
a 60V drain to source voltage (Vdss)
DMN62D0LFB-7 Applications
There are a lot of Diodes Incorporated
DMN62D0LFB-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 32pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4V).
DMN62D0LFB-7 Features
a continuous drain current (ID) of 100mA
the turn-off delay time is 26.4 ns
a 60V drain to source voltage (Vdss)
DMN62D0LFB-7 Applications
There are a lot of Diodes Incorporated
DMN62D0LFB-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN62D0LFB-7 More Descriptions
Mosfet, N-Ch, 60V, 0.32A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFB-7
DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3
Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R
Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.32A, X1-DFN1006;
DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3
Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R
Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.32A, X1-DFN1006;
The three parts on the right have similar specifications to DMN62D0LFB-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal PositionPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)REACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Surface MountSubcategoryTerminal FormJESD-30 CodeConfigurationDrain Current-Max (Abs) (ID)View Compare
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DMN62D0LFB-716 WeeksGoldSurface MountSurface Mount3-UFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99HIGH RELIABILITYMOSFET (Metal Oxide)BOTTOM311470mW TaSingleENHANCEMENT MODE470mWDRAIN3.4 nsN-ChannelSWITCHING2 Ω @ 100mA, 4V1V @ 250μA32pF @ 25V100mA Ta0.45nC @ 4.5V3.4ns60V1.5V 4V±20V16.3 ns26.4 ns100mA20V2Ohm60V6 pFNo SVHCNoROHS3 CompliantLead Free-----------
-
14 Weeks-Surface MountSurface MountSC-70, SOT-323---65°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99-MOSFET (Metal Oxide)----200mW Ta-----N-Channel-2 Ω @ 500mA, 10V2.5V @ 1mA50pF @ 25V---60V4.5V 10V±20V---------ROHS3 Compliant-Automotive, AEC-Q101Matte Tin (Sn)NOT SPECIFIEDNOT SPECIFIED------
-
17 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99-MOSFET (Metal Oxide)----1.2W Ta-----N-Channel-44m Ω @ 4.3A, 10V3V @ 250μA1287pF @ 25V5A Ta22.4nC @ 10V-60V4.5V 10V±20V--5A------ROHS3 Compliant-Automotive, AEC-Q101Matte Tin (Sn)NOT SPECIFIEDNOT SPECIFIED------
-
23 Weeks--Surface Mount3-UFDFN-SILICON-55°C~150°C TJTape & Reel (TR)2015e4yesActive1 (Unlimited)3EAR99HIGH RELIABILITYMOSFET (Metal Oxide)BOTTOM31-430mW Ta-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta--60V5V 10V±20V----4Ohm60V---ROHS3 Compliant--Nickel/Palladium/Gold (Ni/Pd/Au)26040YESFET General Purpose PowerNO LEADR-PBCC-N3SINGLE WITH BUILT-IN DIODE0.4A
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