DMN62D0LFB-7

Diodes Incorporated DMN62D0LFB-7

Part Number:
DMN62D0LFB-7
Manufacturer:
Diodes Incorporated
Ventron No:
3586491-DMN62D0LFB-7
Description:
MOSFET N-CH 60V X2-DFN1006-3
ECAD Model:
Datasheet:
DMN62D0LFB-7

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Specifications
Diodes Incorporated DMN62D0LFB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN62D0LFB-7.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-UFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    470mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    470mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 100mA, 4V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    32pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.45nC @ 4.5V
  • Rise Time
    3.4ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16.3 ns
  • Turn-Off Delay Time
    26.4 ns
  • Continuous Drain Current (ID)
    100mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    2Ohm
  • DS Breakdown Voltage-Min
    60V
  • Feedback Cap-Max (Crss)
    6 pF
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN62D0LFB-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 32pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4V).

DMN62D0LFB-7 Features
a continuous drain current (ID) of 100mA
the turn-off delay time is 26.4 ns
a 60V drain to source voltage (Vdss)


DMN62D0LFB-7 Applications
There are a lot of Diodes Incorporated
DMN62D0LFB-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN62D0LFB-7 More Descriptions
Mosfet, N-Ch, 60V, 0.32A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFB-7
DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3
Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R
Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.32A, X1-DFN1006;
Product Comparison
The three parts on the right have similar specifications to DMN62D0LFB-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Surface Mount
    Subcategory
    Terminal Form
    JESD-30 Code
    Configuration
    Drain Current-Max (Abs) (ID)
    View Compare
  • DMN62D0LFB-7
    DMN62D0LFB-7
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    3-UFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    BOTTOM
    3
    1
    1
    470mW Ta
    Single
    ENHANCEMENT MODE
    470mW
    DRAIN
    3.4 ns
    N-Channel
    SWITCHING
    2 Ω @ 100mA, 4V
    1V @ 250μA
    32pF @ 25V
    100mA Ta
    0.45nC @ 4.5V
    3.4ns
    60V
    1.5V 4V
    ±20V
    16.3 ns
    26.4 ns
    100mA
    20V
    2Ohm
    60V
    6 pF
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN601WKQ-13
    14 Weeks
    -
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    -
    -
    -65°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    2 Ω @ 500mA, 10V
    2.5V @ 1mA
    50pF @ 25V
    -
    -
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Automotive, AEC-Q101
    Matte Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
  • DMN6040SVTQ-13
    17 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    44m Ω @ 4.3A, 10V
    3V @ 250μA
    1287pF @ 25V
    5A Ta
    22.4nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    5A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Automotive, AEC-Q101
    Matte Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
  • DMN65D8LFB-7
    23 Weeks
    -
    -
    Surface Mount
    3-UFDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    BOTTOM
    3
    1
    -
    430mW Ta
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    3 Ω @ 115mA, 10V
    2V @ 250μA
    25pF @ 25V
    260mA Ta
    -
    -
    60V
    5V 10V
    ±20V
    -
    -
    -
    -
    4Ohm
    60V
    -
    -
    -
    ROHS3 Compliant
    -
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    260
    40
    YES
    FET General Purpose Power
    NO LEAD
    R-PBCC-N3
    SINGLE WITH BUILT-IN DIODE
    0.4A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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