DMN65D8LFB-7B

Diodes Incorporated DMN65D8LFB-7B

Part Number:
DMN65D8LFB-7B
Manufacturer:
Diodes Incorporated
Ventron No:
2848586-DMN65D8LFB-7B
Description:
MOSFET N-CH 60V 260MA 3DFN
ECAD Model:
Datasheet:
DMN65D8LFB-7B

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Specifications
Diodes Incorporated DMN65D8LFB-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN65D8LFB-7B.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-UFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    430mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    840mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.27 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 115mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    25pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    260mA Ta
  • Rise Time
    3.15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6.29 ns
  • Turn-Off Delay Time
    12.025 ns
  • Continuous Drain Current (ID)
    400mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.26A
  • Drain-source On Resistance-Max
    4Ohm
  • Drain to Source Breakdown Voltage
    60V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN65D8LFB-7B Overview
The maximum input capacitance of this device is 25pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.26A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.025 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.27 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.

DMN65D8LFB-7B Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.025 ns


DMN65D8LFB-7B Applications
There are a lot of Diodes Incorporated
DMN65D8LFB-7B applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN65D8LFB-7B More Descriptions
Single N-Channel 60 V 4 Ohm 0.4 nC 430 mW Silicon SMT Mosfet - UFDFN-3
Mosfet, N-Ch, 60V, 0.26A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN65D8LFB-7B
Trans MOSFET N-CH 60V 0.4A Automotive 3-Pin DFN EP T/R
Product Comparison
The three parts on the right have similar specifications to DMN65D8LFB-7B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Series
    View Compare
  • DMN65D8LFB-7B
    DMN65D8LFB-7B
    23 Weeks
    Surface Mount
    Surface Mount
    3-UFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    3
    1
    1
    430mW Ta
    Single
    ENHANCEMENT MODE
    840mW
    DRAIN
    3.27 ns
    N-Channel
    SWITCHING
    3 Ω @ 115mA, 10V
    2V @ 250μA
    25pF @ 25V
    260mA Ta
    3.15ns
    5V 10V
    ±20V
    6.29 ns
    12.025 ns
    400mA
    20V
    0.26A
    4Ohm
    60V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • DMN63D1L-13
    14 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    370mW Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    2 Ω @ 500mA, 10V
    2.5V @ 1mA
    30pF @ 25V
    380mA Ta
    -
    5V 10V
    ±20V
    -
    -
    380mA
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    0.3nC @ 4.5V
    60V
    -
  • DMN601WKQ-13
    14 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    -
    -
    -65°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    2 Ω @ 500mA, 10V
    2.5V @ 1mA
    50pF @ 25V
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    60V
    Automotive, AEC-Q101
  • DMN6040SVTQ-13
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    44m Ω @ 4.3A, 10V
    3V @ 250μA
    1287pF @ 25V
    5A Ta
    -
    4.5V 10V
    ±20V
    -
    -
    5A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    22.4nC @ 10V
    60V
    Automotive, AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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