Diodes Incorporated DMN65D8LFB-7B
- Part Number:
- DMN65D8LFB-7B
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848586-DMN65D8LFB-7B
- Description:
- MOSFET N-CH 60V 260MA 3DFN
- Datasheet:
- DMN65D8LFB-7B
Diodes Incorporated DMN65D8LFB-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN65D8LFB-7B.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max430mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation840mW
- Case ConnectionDRAIN
- Turn On Delay Time3.27 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 115mA, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds25pF @ 25V
- Current - Continuous Drain (Id) @ 25°C260mA Ta
- Rise Time3.15ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6.29 ns
- Turn-Off Delay Time12.025 ns
- Continuous Drain Current (ID)400mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.26A
- Drain-source On Resistance-Max4Ohm
- Drain to Source Breakdown Voltage60V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN65D8LFB-7B Overview
The maximum input capacitance of this device is 25pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.26A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.025 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.27 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.
DMN65D8LFB-7B Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.025 ns
DMN65D8LFB-7B Applications
There are a lot of Diodes Incorporated
DMN65D8LFB-7B applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 25pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.26A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.025 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.27 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.
DMN65D8LFB-7B Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.025 ns
DMN65D8LFB-7B Applications
There are a lot of Diodes Incorporated
DMN65D8LFB-7B applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN65D8LFB-7B More Descriptions
Single N-Channel 60 V 4 Ohm 0.4 nC 430 mW Silicon SMT Mosfet - UFDFN-3
Mosfet, N-Ch, 60V, 0.26A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN65D8LFB-7B
Trans MOSFET N-CH 60V 0.4A Automotive 3-Pin DFN EP T/R
Mosfet, N-Ch, 60V, 0.26A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN65D8LFB-7B
Trans MOSFET N-CH 60V 0.4A Automotive 3-Pin DFN EP T/R
The three parts on the right have similar specifications to DMN65D8LFB-7B.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageREACH SVHCRadiation HardeningRoHS StatusLead FreeGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)SeriesView Compare
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DMN65D8LFB-7B23 WeeksSurface MountSurface Mount3-UFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2015e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)BOTTOM26040311430mW TaSingleENHANCEMENT MODE840mWDRAIN3.27 nsN-ChannelSWITCHING3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta3.15ns5V 10V±20V6.29 ns12.025 ns400mA20V0.26A4Ohm60VNo SVHCNoROHS3 CompliantLead Free----
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14 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---370mW Ta-----N-Channel-2 Ω @ 500mA, 10V2.5V @ 1mA30pF @ 25V380mA Ta-5V 10V±20V--380mA------ROHS3 Compliant-0.3nC @ 4.5V60V-
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14 WeeksSurface MountSurface MountSC-70, SOT-323---65°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---200mW Ta-----N-Channel-2 Ω @ 500mA, 10V2.5V @ 1mA50pF @ 25V--4.5V 10V±20V---------ROHS3 Compliant--60VAutomotive, AEC-Q101
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17 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---1.2W Ta-----N-Channel-44m Ω @ 4.3A, 10V3V @ 250μA1287pF @ 25V5A Ta-4.5V 10V±20V--5A------ROHS3 Compliant-22.4nC @ 10V60VAutomotive, AEC-Q101
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