Diodes Incorporated DMN62D1SFB-7B
- Part Number:
- DMN62D1SFB-7B
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2850143-DMN62D1SFB-7B
- Description:
- MOSFET N-CH 60V 410MA 3DFN
- Datasheet:
- DMN62D1SFB-7B
Diodes Incorporated DMN62D1SFB-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN62D1SFB-7B.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max470mW Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation470mW
- Case ConnectionDRAIN
- Turn On Delay Time3.89 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 40mA, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds80pF @ 40V
- Current - Continuous Drain (Id) @ 25°C410mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.8nC @ 10V
- Rise Time4.93ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11.96 ns
- Turn-Off Delay Time18.8 ns
- Continuous Drain Current (ID)410mA
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min60V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN62D1SFB-7B Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 80pF @ 40V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 410mA.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 18.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.89 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
DMN62D1SFB-7B Features
a continuous drain current (ID) of 410mA
the turn-off delay time is 18.8 ns
a 60V drain to source voltage (Vdss)
DMN62D1SFB-7B Applications
There are a lot of Diodes Incorporated
DMN62D1SFB-7B applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 80pF @ 40V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 410mA.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 18.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.89 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
DMN62D1SFB-7B Features
a continuous drain current (ID) of 410mA
the turn-off delay time is 18.8 ns
a 60V drain to source voltage (Vdss)
DMN62D1SFB-7B Applications
There are a lot of Diodes Incorporated
DMN62D1SFB-7B applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
DMN62D1SFB-7B More Descriptions
Mosfet, N-Ch, 60V, 0.41A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D1SFB-7B
DMN62D1SFB Series 60 V 410 mA N-Channel Enhancement Mode Mosfet - DFN-3
Trans MOSFET N-CH 60V 0.41A Automotive 3-Pin DFN T/R
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.41A, X1-DFN1006;
DMN62D1SFB Series 60 V 410 mA N-Channel Enhancement Mode Mosfet - DFN-3
Trans MOSFET N-CH 60V 0.41A Automotive 3-Pin DFN T/R
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.41A, X1-DFN1006;
The three parts on the right have similar specifications to DMN62D1SFB-7B.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinREACH SVHCRadiation HardeningRoHS StatusSeriesSurface MountTerminal FormJESD-30 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxReference StandardView Compare
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DMN62D1SFB-7B16 WeeksSurface MountSurface Mount3-UFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2014e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)BOTTOM2604031SINGLE WITH BUILT-IN DIODE1470mW TaENHANCEMENT MODE470mWDRAIN3.89 nsN-ChannelSWITCHING1.4 Ω @ 40mA, 10V2.3V @ 250μA80pF @ 40V410mA Ta2.8nC @ 10V4.93ns60V4.5V 10V±20V11.96 ns18.8 ns410mA20V60VNo SVHCNoROHS3 Compliant--------
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14 WeeksSurface MountSurface MountSC-70, SOT-323---65°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED----200mW Ta----N-Channel-2 Ω @ 500mA, 10V2.5V @ 1mA50pF @ 25V---60V4.5V 10V±20V-------ROHS3 CompliantAutomotive, AEC-Q101------
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23 Weeks-Surface Mount3-UFDFN-SILICON-55°C~150°C TJTape & Reel (TR)2015e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)BOTTOM2604031SINGLE WITH BUILT-IN DIODE-430mW TaENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta--60V5V 10V±20V----60V--ROHS3 Compliant-YESNO LEADR-PBCC-N30.4A4Ohm-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALNOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE AND RESISTOR-390mW TaENHANCEMENT MODE---N-ChannelSWITCHING1.8 Ω @ 150mA, 5V2V @ 1mA12.9pF @ 12V470mA Ta0.74nC @ 5V-60V3V 5V±12V--470mA-60V--ROHS3 Compliant--GULL WINGR-PDSO-G30.47A2.4OhmAEC-Q101
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