DMN62D1SFB-7B

Diodes Incorporated DMN62D1SFB-7B

Part Number:
DMN62D1SFB-7B
Manufacturer:
Diodes Incorporated
Ventron No:
2850143-DMN62D1SFB-7B
Description:
MOSFET N-CH 60V 410MA 3DFN
ECAD Model:
Datasheet:
DMN62D1SFB-7B

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Specifications
Diodes Incorporated DMN62D1SFB-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN62D1SFB-7B.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-UFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    470mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    470mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.89 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 40mA, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    80pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    410mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 10V
  • Rise Time
    4.93ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11.96 ns
  • Turn-Off Delay Time
    18.8 ns
  • Continuous Drain Current (ID)
    410mA
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    60V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN62D1SFB-7B Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 80pF @ 40V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 410mA.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 18.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.89 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

DMN62D1SFB-7B Features
a continuous drain current (ID) of 410mA
the turn-off delay time is 18.8 ns
a 60V drain to source voltage (Vdss)


DMN62D1SFB-7B Applications
There are a lot of Diodes Incorporated
DMN62D1SFB-7B applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
DMN62D1SFB-7B More Descriptions
Mosfet, N-Ch, 60V, 0.41A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D1SFB-7B
DMN62D1SFB Series 60 V 410 mA N-Channel Enhancement Mode Mosfet - DFN-3
Trans MOSFET N-CH 60V 0.41A Automotive 3-Pin DFN T/R
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 0.41A, X1-DFN1006;
Product Comparison
The three parts on the right have similar specifications to DMN62D1SFB-7B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Series
    Surface Mount
    Terminal Form
    JESD-30 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Reference Standard
    View Compare
  • DMN62D1SFB-7B
    DMN62D1SFB-7B
    16 Weeks
    Surface Mount
    Surface Mount
    3-UFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    1
    470mW Ta
    ENHANCEMENT MODE
    470mW
    DRAIN
    3.89 ns
    N-Channel
    SWITCHING
    1.4 Ω @ 40mA, 10V
    2.3V @ 250μA
    80pF @ 40V
    410mA Ta
    2.8nC @ 10V
    4.93ns
    60V
    4.5V 10V
    ±20V
    11.96 ns
    18.8 ns
    410mA
    20V
    60V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN601WKQ-13
    14 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    -
    -
    -65°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    N-Channel
    -
    2 Ω @ 500mA, 10V
    2.5V @ 1mA
    50pF @ 25V
    -
    -
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Automotive, AEC-Q101
    -
    -
    -
    -
    -
    -
  • DMN65D8LFB-7
    23 Weeks
    -
    Surface Mount
    3-UFDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    -
    430mW Ta
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    3 Ω @ 115mA, 10V
    2V @ 250μA
    25pF @ 25V
    260mA Ta
    -
    -
    60V
    5V 10V
    ±20V
    -
    -
    -
    -
    60V
    -
    -
    ROHS3 Compliant
    -
    YES
    NO LEAD
    R-PBCC-N3
    0.4A
    4Ohm
    -
  • DMN61D8LQ-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
    -
    390mW Ta
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 150mA, 5V
    2V @ 1mA
    12.9pF @ 12V
    470mA Ta
    0.74nC @ 5V
    -
    60V
    3V 5V
    ±12V
    -
    -
    470mA
    -
    60V
    -
    -
    ROHS3 Compliant
    -
    -
    GULL WING
    R-PDSO-G3
    0.47A
    2.4Ohm
    AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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