Diodes Incorporated DMN62D0U-7
- Part Number:
- DMN62D0U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481085-DMN62D0U-7
- Description:
- MOSFET N-CH 60V 0.38A
- Datasheet:
- DMN62D0U-7
Diodes Incorporated DMN62D0U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN62D0U-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max380mW Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2 Ω @ 100mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds32pF @ 30V
- Current - Continuous Drain (Id) @ 25°C380mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.5nC @ 4.5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±20V
- Continuous Drain Current (ID)380mA
- RoHS StatusROHS3 Compliant
DMN62D0U-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 32pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 380mA.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMN62D0U-7 Features
a continuous drain current (ID) of 380mA
a 60V drain to source voltage (Vdss)
DMN62D0U-7 Applications
There are a lot of Diodes Incorporated
DMN62D0U-7 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 32pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 380mA.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMN62D0U-7 Features
a continuous drain current (ID) of 380mA
a 60V drain to source voltage (Vdss)
DMN62D0U-7 Applications
There are a lot of Diodes Incorporated
DMN62D0U-7 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
DMN62D0U-7 More Descriptions
N-Channel 60 V 3 Ohm 0.5 nC Surface Mount Enhancement Mode Mosfet - SOT-23
Mosfet, N-Ch, 60V, 0.38A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN62D0U-7
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R
Mosfet, N-Ch, 60V, 0.38A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN62D0U-7
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R
The three parts on the right have similar specifications to DMN62D0U-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusSeriesSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureSubcategoryTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinReference StandardView Compare
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DMN62D0U-714 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED380mW TaN-Channel2 Ω @ 100mA, 4.5V1V @ 250μA32pF @ 30V380mA Ta0.5nC @ 4.5V60V1.8V 4.5V±20V380mAROHS3 Compliant--------------------
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17 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED1.2W TaN-Channel44m Ω @ 4.3A, 10V3V @ 250μA1287pF @ 25V5A Ta22.4nC @ 10V60V4.5V 10V±20V5AROHS3 CompliantAutomotive, AEC-Q101------------------
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23 Weeks-Surface Mount3-UFDFN--55°C~150°C TJTape & Reel (TR)2015e4yesActive1 (Unlimited)EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)26040430mW TaN-Channel3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta-60V5V 10V±20V-ROHS3 Compliant-YESSILICON3HIGH RELIABILITYFET General Purpose PowerBOTTOMNO LEAD3R-PBCC-N31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING0.4A4Ohm60V-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED390mW TaN-Channel1.8 Ω @ 150mA, 5V2V @ 1mA12.9pF @ 12V470mA Ta0.74nC @ 5V60V3V 5V±12V470mAROHS3 Compliant--SILICON3HIGH RELIABILITY-DUALGULL WING-R-PDSO-G31SINGLE WITH BUILT-IN DIODE AND RESISTORENHANCEMENT MODE-SWITCHING0.47A2.4Ohm60VAEC-Q101
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