Diodes Incorporated DMN6075S-7

Name: DMN6075S-7
Brand: Diodes Incorporated
SKU: 2480818-DMN6075S-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN6075S-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2480818-DMN6075S-7

Description:: MOSFET N-CH 60V 2A SOT23-3

ECAD Model:

Datasheet:: DMN6075S-7

Specifications

Diodes Incorporated DMN6075S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN6075S-7.

Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Channels
1
Power Dissipation-Max
800mW Ta
Power Dissipation
800mW
Turn On Delay Time
3.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
85m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
606pF @ 20V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Max Junction Temperature (Tj)
150°C
Height
1.1mm
RoHS Status
ROHS3 Compliant

Description

DMN6075S-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 606pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

DMN6075S-7 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 35 ns

DMN6075S-7 Applications
There are a lot of Diodes Incorporated
DMN6075S-7 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMN6075S-7 More Descriptions

Transistor, 60V, N-channel, enhancement mode MOSFET, 2.5A, SOT-23 | Diodes Inc DMN6075S-7
Single N-Channel 60 V 120 mOhm 12.3 nC 0.8 W Silicon Mosfet - SOT-23
Mosfet Bvdss: 41V~60V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN6075S-7
Trans MOSFET N-CH 60V 2.5A Automotive 3-Pin SOT-23 T/R
MOSFET, N-CH, 60V, 2A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.069ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dis

Product Comparison

The three parts on the right have similar specifications to DMN6075S-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

RoHS Status

Pbfree Code

Drain to Source Voltage (Vdss)

Series

Surface Mount

Transistor Element Material

Number of Terminations

Additional Feature

Subcategory

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
DMN6075S-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

260

30

1

800mW Ta

800mW

3.5 ns

N-Channel

85m Ω @ 3.2A, 10V

3V @ 250μA

606pF @ 20V

2A Ta

12.3nC @ 10V

4.5V 10V

±20V

35 ns

2A

20V

60V

150°C

1.1mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN63D1L-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

370mW Ta

-

-

N-Channel

2 Ω @ 500mA, 10V

2.5V @ 1mA

30pF @ 25V

380mA Ta

0.3nC @ 4.5V

5V 10V

±20V

-

380mA

-

-

-

-

ROHS3 Compliant

yes

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN6075S-7 vs DMN63D1L-13
DMN601WKQ-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-65°C~150°C TJ

Tape & Reel (TR)

-

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

200mW Ta

-

-

N-Channel

2 Ω @ 500mA, 10V

2.5V @ 1mA

50pF @ 25V

-

-

4.5V 10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

60V

Automotive, AEC-Q101

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN6075S-7 vs DMN601WKQ-13
DMN65D8LFB-7

Diodes Incorporated

23 Weeks

-

Surface Mount

3-UFDFN

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

Active

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

260

40

-

430mW Ta

-

-

N-Channel

3 Ω @ 115mA, 10V

2V @ 250μA

25pF @ 25V

260mA Ta

-

5V 10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

yes

60V

-

YES

SILICON

3

HIGH RELIABILITY

FET General Purpose Power

BOTTOM

NO LEAD

3

R-PBCC-N3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

0.4A

4Ohm

60V

DMN6075S-7 vs DMN65D8LFB-7