Diodes Incorporated DMN6040SVT-7

Name: DMN6040SVT-7
Brand: Diodes Incorporated
SKU: 2480874-DMN6040SVT-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN6040SVT-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2480874-DMN6040SVT-7

Description:: MOSFET N CH 60V 5A TSOT26

ECAD Model:

Datasheet:: DMN6040SVT-7

Specifications

Diodes Incorporated DMN6040SVT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN6040SVT-7.

Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.8W
Turn On Delay Time
6.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
44m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Ta
Gate Charge (Qg) (Max) @ Vgs
22.4nC @ 10V
Rise Time
8.1ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
20.1 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
4.3A
Drain-source On Resistance-Max
0.044Ohm
Drain to Source Breakdown Voltage
60V
Height
900μm
Length
2.9mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN6040SVT-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1287pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.4.3A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20.1 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

DMN6040SVT-7 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20.1 ns

DMN6040SVT-7 Applications
There are a lot of Diodes Incorporated
DMN6040SVT-7 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

DMN6040SVT-7 More Descriptions

N-Channel 60 V 44 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
Mosfet, N-Ch, 60V, 5A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN6040SVT-7
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 44m Ω @ 4.3A, 10V 5A Ta -55°C~150°C TJ MOSFET N CH 60V 5A TSOT26

Product Comparison

The three parts on the right have similar specifications to DMN6040SVT-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Drain to Source Voltage (Vdss)

Reference Standard

JESD-30 Code

Configuration

DS Breakdown Voltage-Min

View Compare
DMN6040SVT-7

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

6

1

1

1.2W Ta

Single

ENHANCEMENT MODE

1.8W

6.6 ns

N-Channel

SWITCHING

44m Ω @ 4.3A, 10V

3V @ 250μA

1287pF @ 25V

5A Ta

22.4nC @ 10V

8.1ns

4.5V 10V

±20V

4 ns

20.1 ns

5A

20V

4.3A

0.044Ohm

60V

900μm

2.9mm

1.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
DMN601WKQ-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-

-

-65°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

200mW Ta

-

-

-

-

N-Channel

-

2 Ω @ 500mA, 10V

2.5V @ 1mA

50pF @ 25V

-

-

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Automotive, AEC-Q101

60V

-

-

-

-

DMN6040SVT-7 vs DMN601WKQ-13
DMN6040SVTQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

1.2W Ta

-

-

-

-

N-Channel

-

44m Ω @ 4.3A, 10V

3V @ 250μA

1287pF @ 25V

5A Ta

22.4nC @ 10V

-

4.5V 10V

±20V

-

-

5A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Automotive, AEC-Q101

60V

-

-

-

-

DMN6040SVT-7 vs DMN6040SVTQ-13
DMN61D8LQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

-

390mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

470mA Ta

0.74nC @ 5V

-

3V 5V

±12V

-

-

470mA

-

0.47A

2.4Ohm

-

-

-

-

-

-

ROHS3 Compliant

-

-

60V

AEC-Q101

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE AND RESISTOR

60V

DMN6040SVT-7 vs DMN61D8LQ-13