Diodes Incorporated DMN313DLT-7

Name: DMN313DLT-7
Brand: Diodes Incorporated
SKU: 2849557-DMN313DLT-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN313DLT-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2849557-DMN313DLT-7

Description:: MOSFET N-CH 30V 0.27A SOT523

ECAD Model:

Datasheet:: DMN313DLT-7

Specifications

Diodes Incorporated DMN313DLT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN313DLT-7.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
280mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
36.3pF @ 5V
Current - Continuous Drain (Id) @ 25°C
270mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.5nC @ 4.5V
Rise Time
2.24ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±20V
Fall Time (Typ)
28.2 ns
Turn-Off Delay Time
19.2 ns
Continuous Drain Current (ID)
380mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.21A
Drain-source On Resistance-Max
2Ohm
Height
800μm
Length
1.7mm
Width
850μm
RoHS Status
ROHS3 Compliant

Description

DMN313DLT-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 36.3pF @ 5V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 380mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.21A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

DMN313DLT-7 Features
a continuous drain current (ID) of 380mA
the turn-off delay time is 19.2 ns
a 30V drain to source voltage (Vdss)

DMN313DLT-7 Applications
There are a lot of Diodes Incorporated
DMN313DLT-7 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMN313DLT-7 More Descriptions

Single N-Channel 30 V 3.2 Ohm 0.5 nC 0.36 W Silicon SMT Mosfet - SOT-523
Trans MOSFET N-CH 30V 0.31A Automotive 3-Pin SOT-523 T/R
MOSFET N-Ch 30V 270mA Enhanc. SOT-523 | Diodes Inc DMN313DLT-7
MOSFET N-CH 30V 180MA SC-75-TRANSISTOR F
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Mosfet Bvdss: 25V~30V Sot523 T&r 3K
MOSFET, N-CH, 30V, 0.27A, SOT-523;
IC DUAL 1-4 DATASELCT/MUX 16SOIC

Product Comparison

The three parts on the right have similar specifications to DMN313DLT-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Height

Length

Width

RoHS Status

Weight

Configuration

Number of Channels

Power Dissipation

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

REACH SVHC

Radiation Hardening

Lead Free

JESD-30 Code

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
DMN313DLT-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SOT-523

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

280mW Ta

Single

ENHANCEMENT MODE

4.5 ns

N-Channel

SWITCHING

2 Ω @ 10mA, 4V

1.5V @ 250μA

36.3pF @ 5V

270mA Ta

0.5nC @ 4.5V

2.24ns

30V

2.5V 4.5V

±20V

28.2 ns

19.2 ns

380mA

20V

0.21A

2Ohm

800μm

1.7mm

850μm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN3010LSS-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

2.5W Ta

-

ENHANCEMENT MODE

5.6 ns

N-Channel

SWITCHING

9m Ω @ 16A, 10V

2V @ 250μA

2096pF @ 15V

16A Ta

43.7nC @ 10V

8ns

-

4.5V 10V

±20V

27 ns

45 ns

16A

20V

-

0.009Ohm

1.5mm

5.3mm

4.1mm

ROHS3 Compliant

850.995985mg

SINGLE WITH BUILT-IN DIODE

1

2.5W

30V

64A

No SVHC

No

-

-

-

-

DMN313DLT-7 vs DMN3010LSS-13
DMN3010LFG-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

900mW Ta

Single

-

4.5 ns

N-Channel

-

8.5m Ω @ 18A, 10V

2.5V @ 250μA

2075pF @ 15V

11A Ta 30A Tc

37nC @ 10V

19.6ns

-

4.5V 10V

±20V

10.7 ns

31 ns

30A

20V

-

-

850μm

3.35mm

3.35mm

ROHS3 Compliant

72.007789mg

-

1

-

30V

-

-

No

Lead Free

-

-

-

DMN313DLT-7 vs DMN3010LFG-7
DMN3042L-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

720mW Ta

-

ENHANCEMENT MODE

-

N-Channel

SWITCHING

26.5m Ω @ 5.8A, 10V

1.4V @ 250μA

860pF @ 15V

5.8A Ta

20nC @ 10V

-

30V

2.5V 10V

±12V

-

-

5.8A

-

-

0.0265Ohm

-

-

-

ROHS3 Compliant

-

SINGLE WITH BUILT-IN DIODE

-

-

-

-

-

-

-

R-PDSO-G3

30V

80 pF

DMN313DLT-7 vs DMN3042L-7