Diodes Incorporated DMN3067LW-7

Name: DMN3067LW-7
Brand: Diodes Incorporated
SKU: 2848735-DMN3067LW-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3067LW-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2848735-DMN3067LW-7

Description:: MOSFET N-CH 30V 2.6A SOT-323

ECAD Model:

Datasheet:: DMN3067LW-7

Specifications

Diodes Incorporated DMN3067LW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3067LW-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Weight
6.010099mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Turn On Delay Time
3.8 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
67m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
447pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Rise Time
5.2ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
6.1 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
2.6A
Gate to Source Voltage (Vgs)
12V
RoHS Status
ROHS3 Compliant

Description

DMN3067LW-7 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMN3067LW-7 Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

DMN3067LW-7 Applications  Switching  Power Management Functions

DMN3067LW-7 More Descriptions

Trans MOSFET N-CH 30V 2.6A Automotive 3-Pin SOT-323 T/R
MOSFET, N-CH, 30V, 2.6A, SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 2.6A, SOT323; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to DMN3067LW-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Power Dissipation-Max

Element Configuration

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

RoHS Status

Number of Pins

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Subcategory

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Operating Mode

Power Dissipation

Transistor Application

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

JESD-30 Code

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
DMN3067LW-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

6.010099mg

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

260

30

1

500mW Ta

Single

3.8 ns

N-Channel

67m Ω @ 2.5A, 4.5V

1.5V @ 250μA

447pF @ 10V

2.6A Ta

4.6nC @ 4.5V

5.2ns

30V

2.5V 4.5V

±12V

6.1 ns

15 ns

2.6A

12V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN3010LSS-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

850.995985mg

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

260

40

1

2.5W Ta

-

5.6 ns

N-Channel

9m Ω @ 16A, 10V

2V @ 250μA

2096pF @ 15V

16A Ta

43.7nC @ 10V

8ns

-

4.5V 10V

±20V

27 ns

45 ns

16A

20V

ROHS3 Compliant

8

SILICON

yes

8

HIGH RELIABILITY

FET General Purpose Powers

DUAL

GULL WING

8

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

2.5W

SWITCHING

0.009Ohm

30V

64A

1.5mm

5.3mm

4.1mm

No SVHC

No

-

-

-

DMN3067LW-7 vs DMN3010LSS-13
DMN33D8LT-7

Diodes Incorporated

22 Weeks

Surface Mount

Surface Mount

SOT-523

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

240mW Ta

-

-

N-Channel

5 Ω @ 10mA, 4V

1.5V @ 100μA

48pF @ 5V

115mA Ta

0.55nC @ 10V

-

30V

2.5V 4V

±20V

-

-

115mA

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN3067LW-7 vs DMN33D8LT-7
DMN3042L-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

-

720mW Ta

-

-

N-Channel

26.5m Ω @ 5.8A, 10V

1.4V @ 250μA

860pF @ 15V

5.8A Ta

20nC @ 10V

-

30V

2.5V 10V

±12V

-

-

5.8A

-

ROHS3 Compliant

-

SILICON

-

3

-

-

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

SWITCHING

0.0265Ohm

-

-

-

-

-

-

-

R-PDSO-G3

30V

80 pF

DMN3067LW-7 vs DMN3042L-7