Diodes Incorporated DMN3052L-7

Name: DMN3052L-7
Brand: Diodes Incorporated
SKU: 2490740-DMN3052L-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3052L-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2490740-DMN3052L-7

Description:: MOSFET N-CH 30V 5.4A SOT23-3

ECAD Model:

Datasheet:: DMN3052L-7

Specifications

Diodes Incorporated DMN3052L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3052L-7.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
32MOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.4W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
32m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
555pF @ 5V
Current - Continuous Drain (Id) @ 25°C
5.4A Ta
Drive Voltage (Max Rds On,Min Rds On)
2V 10V
Vgs (Max)
±12V
Continuous Drain Current (ID)
5.4A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
30V
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN3052L-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 555pF @ 5V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2V 10V).

DMN3052L-7 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 30V voltage

DMN3052L-7 Applications
There are a lot of Diodes Incorporated
DMN3052L-7 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

DMN3052L-7 More Descriptions

Trans MOSFET N-CH 30V 5.4A Automotive 3-Pin SOT-23 T/R
MOSFET N-CH 30V 5.4A SOT23-3
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details

Product Comparison

The three parts on the right have similar specifications to DMN3052L-7.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Turn On Delay Time

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Contact Plating

Qualification Status

Configuration

Case Connection

Threshold Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

View Compare
DMN3052L-7

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

32MOhm

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

1.4W Ta

Single

ENHANCEMENT MODE

1.4W

N-Channel

SWITCHING

32m Ω @ 5.8A, 10V

1.2V @ 250μA

555pF @ 5V

5.4A Ta

2V 10V

±12V

5.4A

12V

30V

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN3016LFDE-13

Diodes Incorporated

Surface Mount

Surface Mount

6-UDFN Exposed Pad

6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e4

-

Active

1 (Unlimited)

-

EAR99

-

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

730mW Ta

-

-

-

N-Channel

-

12m Ω @ 11A, 10V

2V @ 250μA

1415pF @ 15V

10A Ta

4.5V 10V

±20V

10A

20V

-

-

-

-

-

No

ROHS3 Compliant

-

22 Weeks

4.8 ns

25.1nC @ 10V

16.5ns

30V

5.6 ns

26.1 ns

-

-

-

-

-

-

-

DMN3052L-7 vs DMN3016LFDE-13
DMN3010LFG-7

Diodes Incorporated

Surface Mount

Surface Mount

8-PowerVDFN

8

72.007789mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

-

EAR99

-

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

900mW Ta

Single

-

-

N-Channel

-

8.5m Ω @ 18A, 10V

2.5V @ 250μA

2075pF @ 15V

11A Ta 30A Tc

4.5V 10V

±20V

30A

20V

30V

850μm

3.35mm

3.35mm

-

No

ROHS3 Compliant

Lead Free

23 Weeks

4.5 ns

37nC @ 10V

19.6ns

-

10.7 ns

31 ns

-

-

-

-

-

-

-

DMN3052L-7 vs DMN3010LFG-7
DMN3730UFB4-7

Diodes Incorporated

Surface Mount

Surface Mount

3-XFDFN

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

yes

Active

1 (Unlimited)

3

EAR99

-

-

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

260

40

3

1

1

470mW Ta

-

ENHANCEMENT MODE

690mW

N-Channel

SWITCHING

460m Ω @ 200mA, 4.5V

950mV @ 250μA

64.3pF @ 25V

750mA Ta

1.8V 4.5V

±8V

910mA

8V

30V

350μm

1.08mm

675μm

No SVHC

-

ROHS3 Compliant

Lead Free

17 Weeks

3.5 ns

1.6nC @ 4.5V

2.8ns

-

13 ns

38 ns

Gold

Not Qualified

SINGLE WITH BUILT-IN DIODE

DRAIN

450mV

0.75A

0.46Ohm

DMN3052L-7 vs DMN3730UFB4-7