Diodes Incorporated DMN3051LDM-7

Name: DMN3051LDM-7
Brand: Diodes Incorporated
SKU: 2480872-DMN3051LDM-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3051LDM-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2480872-DMN3051LDM-7

Description:: MOSFET N-CH 30V 4A SOT26

ECAD Model:

Datasheet:: DMN3051LDM-7

Specifications

Diodes Incorporated DMN3051LDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3051LDM-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
900mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
900mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
38m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
424pF @ 5V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
4A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
4A
Drain-source On Resistance-Max
0.038Ohm
Drain to Source Breakdown Voltage
30V
Height
1.1mm
Length
3mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DMN3051LDM-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 424pF @ 5V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

DMN3051LDM-7 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage

DMN3051LDM-7 Applications
There are a lot of Diodes Incorporated
DMN3051LDM-7 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

DMN3051LDM-7 More Descriptions

Mosfet, N-Ch, 30V, 4A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMN3051LDM-7
Trans MOSFET N-CH 30V 4A Automotive 6-Pin SOT-26 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT

Product Comparison

The three parts on the right have similar specifications to DMN3051LDM-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Weight

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Lead Free

JESD-30 Code

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Contact Plating

Qualification Status

Case Connection

Threshold Voltage

View Compare
DMN3051LDM-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

6

1

SINGLE WITH BUILT-IN DIODE

1

900mW Ta

ENHANCEMENT MODE

900mW

N-Channel

SWITCHING

38m Ω @ 6A, 10V

2.2V @ 250μA

424pF @ 5V

4A Ta

8.6nC @ 10V

4.5V 10V

±20V

4A

20V

4A

0.038Ohm

30V

1.1mm

3mm

1.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN3010LFG-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1

900mW Ta

-

-

N-Channel

-

8.5m Ω @ 18A, 10V

2.5V @ 250μA

2075pF @ 15V

11A Ta 30A Tc

37nC @ 10V

4.5V 10V

±20V

30A

20V

-

-

30V

850μm

3.35mm

3.35mm

-

No

ROHS3 Compliant

72.007789mg

Single

4.5 ns

19.6ns

10.7 ns

31 ns

Lead Free

-

-

-

-

-

-

-

-

DMN3051LDM-7 vs DMN3010LFG-7
DMN3042L-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

-

720mW Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

26.5m Ω @ 5.8A, 10V

1.4V @ 250μA

860pF @ 15V

5.8A Ta

20nC @ 10V

2.5V 10V

±12V

5.8A

-

-

0.0265Ohm

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

R-PDSO-G3

30V

30V

80 pF

-

-

-

-

DMN3051LDM-7 vs DMN3042L-7
DMN3730UFB4-7

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

3-XFDFN

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

yes

Active

1 (Unlimited)

3

EAR99

-

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

260

40

3

1

SINGLE WITH BUILT-IN DIODE

1

470mW Ta

ENHANCEMENT MODE

690mW

N-Channel

SWITCHING

460m Ω @ 200mA, 4.5V

950mV @ 250μA

64.3pF @ 25V

750mA Ta

1.6nC @ 4.5V

1.8V 4.5V

±8V

910mA

8V

0.75A

0.46Ohm

30V

350μm

1.08mm

675μm

No SVHC

-

ROHS3 Compliant

-

-

3.5 ns

2.8ns

13 ns

38 ns

Lead Free

-

-

-

-

Gold

Not Qualified

DRAIN

450mV

DMN3051LDM-7 vs DMN3730UFB4-7