Diodes Incorporated DMN3033LSN-7
- Part Number:
- DMN3033LSN-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479704-DMN3033LSN-7
- Description:
- MOSFET N-CH 30V 6A SC59-3
- Datasheet:
- DMN3033LSN-7
Diodes Incorporated DMN3033LSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3033LSN-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance30mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs30m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds755pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A Ta
- Gate Charge (Qg) (Max) @ Vgs10.5nC @ 5V
- Rise Time7ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time63 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Pulsed Drain Current-Max (IDM)24A
- Height1.1mm
- Length3mm
- Width1.6mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN3033LSN-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 755pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 63 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMN3033LSN-7 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 63 ns
based on its rated peak drain current 24A.
a 30V drain to source voltage (Vdss)
DMN3033LSN-7 Applications
There are a lot of Diodes Incorporated
DMN3033LSN-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 755pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 63 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMN3033LSN-7 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 63 ns
based on its rated peak drain current 24A.
a 30V drain to source voltage (Vdss)
DMN3033LSN-7 Applications
There are a lot of Diodes Incorporated
DMN3033LSN-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMN3033LSN-7 More Descriptions
N-Channel 30 V 30 mOhm 10.5 nC Enhancement Mode Mosfet - SC-59
Mosfet, N-Ch, 30V, 6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMN3033LSN-7
Trans MOSFET N-CH 30V 6A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFETs - Low Threshold Voltage N-Channel
Mosfet, N-Ch, 30V, 6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMN3033LSN-7
Trans MOSFET N-CH 30V 6A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFETs - Low Threshold Voltage N-Channel
The three parts on the right have similar specifications to DMN3033LSN-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-30 CodeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxRadiation HardeningContact PlatingConfigurationThreshold VoltageDrain to Source Breakdown VoltageView Compare
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DMN3033LSN-715 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR9930mOhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260403Not Qualified111.4W TaSingleENHANCEMENT MODE1.4W11 nsN-Channel30m Ω @ 6A, 10V2.1V @ 250μA755pF @ 10V6A Ta10.5nC @ 5V7ns30V4.5V 10V±20V7 ns63 ns6A20V6A24A1.1mm3mm1.6mmNo SVHCROHS3 CompliantLead Free-----------
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22 WeeksSurface MountSurface MountSOT-523----55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)-EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----240mW Ta----N-Channel5 Ω @ 10mA, 4V1.5V @ 100μA48pF @ 5V115mA Ta0.55nC @ 10V-30V2.5V 4V±20V--115mA-------ROHS3 Compliant-----------
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJCut Tape (CT)-e3noActive1 (Unlimited)2EAR99-Matte Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)-GULL WING260403-112.17W TaSingleENHANCEMENT MODE8.9W2.9 nsN-Channel24m Ω @ 7A, 10V3V @ 250μA608pF @ 15V9.78A Ta12.9nC @ 10V3.3ns30V4.5V 10V±20V8 ns16 ns14.4A20V9.78A46.5A2.39mm6.73mm6.22mmNo SVHCROHS3 Compliant-R-PSSO-G2DRAINSWITCHINGTO-252AA0.024OhmNo----
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17 WeeksSurface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2012e4yesActive1 (Unlimited)3EAR99--HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)BOTTOMNO LEAD260403Not Qualified11470mW Ta-ENHANCEMENT MODE690mW3.5 nsN-Channel460m Ω @ 200mA, 4.5V950mV @ 250μA64.3pF @ 25V750mA Ta1.6nC @ 4.5V2.8ns-1.8V 4.5V±8V13 ns38 ns910mA8V0.75A-350μm1.08mm675μmNo SVHCROHS3 CompliantLead Free-DRAINSWITCHING-0.46Ohm-GoldSINGLE WITH BUILT-IN DIODE450mV30V
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