DMN3033LSN-7

Diodes Incorporated DMN3033LSN-7

Part Number:
DMN3033LSN-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479704-DMN3033LSN-7
Description:
MOSFET N-CH 30V 6A SC59-3
ECAD Model:
Datasheet:
DMN3033LSN-7

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Specifications
Diodes Incorporated DMN3033LSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3033LSN-7.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    30mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    755pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    10.5nC @ 5V
  • Rise Time
    7ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    63 ns
  • Continuous Drain Current (ID)
    6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6A
  • Pulsed Drain Current-Max (IDM)
    24A
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.6mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN3033LSN-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 755pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 63 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

DMN3033LSN-7 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 63 ns
based on its rated peak drain current 24A.
a 30V drain to source voltage (Vdss)


DMN3033LSN-7 Applications
There are a lot of Diodes Incorporated
DMN3033LSN-7 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMN3033LSN-7 More Descriptions
N-Channel 30 V 30 mOhm 10.5 nC Enhancement Mode Mosfet - SC-59
Mosfet, N-Ch, 30V, 6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMN3033LSN-7
Trans MOSFET N-CH 30V 6A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFETs - Low Threshold Voltage N-Channel
Product Comparison
The three parts on the right have similar specifications to DMN3033LSN-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-30 Code
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Radiation Hardening
    Contact Plating
    Configuration
    Threshold Voltage
    Drain to Source Breakdown Voltage
    View Compare
  • DMN3033LSN-7
    DMN3033LSN-7
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    30mOhm
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    Not Qualified
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    1.4W
    11 ns
    N-Channel
    30m Ω @ 6A, 10V
    2.1V @ 250μA
    755pF @ 10V
    6A Ta
    10.5nC @ 5V
    7ns
    30V
    4.5V 10V
    ±20V
    7 ns
    63 ns
    6A
    20V
    6A
    24A
    1.1mm
    3mm
    1.6mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN33D8LT-7
    22 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    240mW Ta
    -
    -
    -
    -
    N-Channel
    5 Ω @ 10mA, 4V
    1.5V @ 100μA
    48pF @ 5V
    115mA Ta
    0.55nC @ 10V
    -
    30V
    2.5V 4V
    ±20V
    -
    -
    115mA
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3024LK3-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    -
    e3
    no
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    40
    3
    -
    1
    1
    2.17W Ta
    Single
    ENHANCEMENT MODE
    8.9W
    2.9 ns
    N-Channel
    24m Ω @ 7A, 10V
    3V @ 250μA
    608pF @ 15V
    9.78A Ta
    12.9nC @ 10V
    3.3ns
    30V
    4.5V 10V
    ±20V
    8 ns
    16 ns
    14.4A
    20V
    9.78A
    46.5A
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    ROHS3 Compliant
    -
    R-PSSO-G2
    DRAIN
    SWITCHING
    TO-252AA
    0.024Ohm
    No
    -
    -
    -
    -
  • DMN3730UFB4-7
    17 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    3
    Not Qualified
    1
    1
    470mW Ta
    -
    ENHANCEMENT MODE
    690mW
    3.5 ns
    N-Channel
    460m Ω @ 200mA, 4.5V
    950mV @ 250μA
    64.3pF @ 25V
    750mA Ta
    1.6nC @ 4.5V
    2.8ns
    -
    1.8V 4.5V
    ±8V
    13 ns
    38 ns
    910mA
    8V
    0.75A
    -
    350μm
    1.08mm
    675μm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    DRAIN
    SWITCHING
    -
    0.46Ohm
    -
    Gold
    SINGLE WITH BUILT-IN DIODE
    450mV
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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