Diodes Incorporated DMN3010LK3-13

Name: DMN3010LK3-13
Brand: Diodes Incorporated
SKU: 2480764-DMN3010LK3-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3010LK3-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2480764-DMN3010LK3-13

Description:: MOSFET N-CH 30V 43A TO252

ECAD Model:

Datasheet:: DMN3010LK3-13

Specifications

Diodes Incorporated DMN3010LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3010LK3-13.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Capacitance
2.075nF
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2075pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.1A Ta 43A Tc
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Rise Time
19.6ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10.7 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
43A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0095Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
90A
RoHS Status
ROHS3 Compliant

Description

DMN3010LK3-13 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2075pF @ 15V.This device has a continuous drain current (ID) of [43A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 31 ns.A maximum pulsed drain current of 90A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

DMN3010LK3-13 Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 90A.

DMN3010LK3-13 Applications
There are a lot of Diodes Incorporated
DMN3010LK3-13 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

DMN3010LK3-13 More Descriptions

Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Trans MOSFET N-CH 30V 13.1A 3-Pin(2 Tab) DPAK T/R
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFET N-CH 30V 13.1A/43A TO252

Product Comparison

The three parts on the right have similar specifications to DMN3010LK3-13.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Capacitance

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Factory Lead Time

Pbfree Code

Drain to Source Voltage (Vdss)

Number of Pins

Subcategory

Pin Count

Power Dissipation

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Height

Length

Width

REACH SVHC

Radiation Hardening

Contact Plating

Terminal Position

Qualification Status

Configuration

Threshold Voltage

Lead Free

View Compare
DMN3010LK3-13

Diodes Incorporated

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3.949996g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

2.075nF

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

1

1.6W Ta

Single

ENHANCEMENT MODE

DRAIN

4.5 ns

N-Channel

SWITCHING

9.5m Ω @ 18A, 10V

2.5V @ 250μA

2075pF @ 15V

13.1A Ta 43A Tc

37nC @ 10V

19.6ns

4.5V 10V

±20V

10.7 ns

31 ns

43A

20V

0.0095Ohm

30V

90A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN3023L-13

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~155°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

900mW Ta

-

-

-

-

N-Channel

-

25m Ω @ 4A, 10V

1.8V @ 250μA

873pF @ 15V

6.2A Ta

18.4nC @ 10V

-

2.5V 10V

±20V

-

-

6.2A

-

-

-

-

ROHS3 Compliant

15 Weeks

yes

30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN3010LK3-13 vs DMN3023L-13
DMN3024LK3-13

Diodes Incorporated

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3.949996g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

-

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

GULL WING

260

-

40

R-PSSO-G2

1

1

2.17W Ta

Single

ENHANCEMENT MODE

DRAIN

2.9 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

3V @ 250μA

608pF @ 15V

9.78A Ta

12.9nC @ 10V

3.3ns

4.5V 10V

±20V

8 ns

16 ns

14.4A

20V

0.024Ohm

-

46.5A

ROHS3 Compliant

17 Weeks

no

30V

3

FET General Purpose Power

3

8.9W

TO-252AA

9.78A

2.39mm

6.73mm

6.22mm

No SVHC

No

-

-

-

-

-

-

DMN3010LK3-13 vs DMN3024LK3-13
DMN3730UFB4-7

Diodes Incorporated

Surface Mount

Surface Mount

3-XFDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

Active

1 (Unlimited)

3

EAR99

-

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

NO LEAD

260

-

40

-

1

1

470mW Ta

-

ENHANCEMENT MODE

DRAIN

3.5 ns

N-Channel

SWITCHING

460m Ω @ 200mA, 4.5V

950mV @ 250μA

64.3pF @ 25V

750mA Ta

1.6nC @ 4.5V

2.8ns

1.8V 4.5V

±8V

13 ns

38 ns

910mA

8V

0.46Ohm

30V

-

ROHS3 Compliant

17 Weeks

yes

-

3

FET General Purpose Powers

3

690mW

-

0.75A

350μm

1.08mm

675μm

No SVHC

-

Gold

BOTTOM

Not Qualified

SINGLE WITH BUILT-IN DIODE

450mV

Lead Free

DMN3010LK3-13 vs DMN3730UFB4-7