Diodes Incorporated DMN2500UFB4-7
- Part Number:
- DMN2500UFB4-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479163-DMN2500UFB4-7
- Description:
- MOSFET N-CH 20V 0.81A 3DFN
- Datasheet:
- DMN2500UFB4
Diodes Incorporated DMN2500UFB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2500UFB4-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max460mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time5.1 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 600mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds60.67pF @ 16V
- Current - Continuous Drain (Id) @ 25°C810mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.74nC @ 4.5V
- Rise Time7.4ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±6V
- Fall Time (Typ)12.3 ns
- Turn-Off Delay Time26.7 ns
- Continuous Drain Current (ID)810mA
- Gate to Source Voltage (Vgs)6V
- Drain Current-Max (Abs) (ID)1A
- Drain-source On Resistance-Max0.4Ohm
- Drain to Source Breakdown Voltage20V
- Height350μm
- Length1.05mm
- Width650μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2500UFB4-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 60.67pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 810mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMN2500UFB4-7 Features
a continuous drain current (ID) of 810mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
DMN2500UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2500UFB4-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 60.67pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 810mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMN2500UFB4-7 Features
a continuous drain current (ID) of 810mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
DMN2500UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2500UFB4-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMN2500UFB4-7 More Descriptions
Single N-Channel 20 V 0.7 Ohm 736.6 pC 0.46 W Silicon SMT Mosfet - XFDFN-3
MOSFET,N Channel,Trans,20V 1A DFN3 | Diodes Inc DMN2500UFB4-7
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN T/R
French Electronic Distributor since 1988
MOSFET,N Channel,Trans,20V 1A DFN3 | Diodes Inc DMN2500UFB4-7
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN T/R
French Electronic Distributor since 1988
The three parts on the right have similar specifications to DMN2500UFB4-7.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeDrain to Source Voltage (Vdss)WeightResistanceTerminal FormPin CountPower DissipationThreshold VoltageMax Junction Temperature (Tj)JESD-30 CodeView Compare
-
DMN2500UFB4-7Surface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2012e4yesObsolete1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)BOTTOM2604011460mW TaSingleENHANCEMENT MODEDRAIN5.1 nsN-ChannelSWITCHING400m Ω @ 600mA, 4.5V1V @ 250μA60.67pF @ 16V810mA Ta0.74nC @ 4.5V7.4ns1.8V 4.5V±6V12.3 ns26.7 ns810mA6V1A0.4Ohm20V350μm1.05mm650μmNo SVHCNoROHS3 CompliantLead Free-----------
-
Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED--1.15W Ta----N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA887pF @ 10V6.2A Tc18.4nC @ 8V-2.5V 4.5V±10V--6.2A---------ROHS3 Compliant-16 Weeks20V--------
-
Surface MountSurface MountSOT-5233SILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUAL2604011300mW TaSingleENHANCEMENT MODE-3.8 nsN-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta-7.9ns1.2V 4.5V±10V15.2 ns13.4 ns230mA10V--20V900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free14 Weeks-2.012816mg3OhmGULL WING3300mW1V150°C-
-
Surface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-MOSFET (Metal Oxide)DUAL2603011660mW TaSingleENHANCEMENT MODEDRAIN56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta18nC @ 8V87ns1.5V 4.5V±8V239 ns632 ns7.9A8V-0.05Ohm20V-----ROHS3 Compliant-14 Weeks---NO LEAD----S-PDSO-N6
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 September 2023
BC640 PNP Transistor: Features, Package and Other Details
Ⅰ. Overview of BC640Ⅱ. Symbol and footprint of BC640Ⅲ. Technical parametersⅣ. Features of BC640Ⅴ. Pinout and package of BC640Ⅵ. Application of BC640Ⅶ. How to optimize the performance of... -
27 September 2023
Introduction to the BTS7960B Motor Drive Module
Ⅰ. What is BTS7960B?Ⅱ. BTS7960B symbol, footprint and pin configurationⅢ. Technical parametersⅣ. Features of BTS7960BⅤ. What are the advantages and disadvantages of BTS7960B?Ⅵ. How to optimize the BTS7960B... -
28 September 2023
MPSA56 PNP General Purpose Transistor: Features, Working Principle and Application
Ⅰ. Overview of MPSA56Ⅱ. Symbol and footprint of MPSA56Ⅲ. Technical parametersⅣ. Features of MPSA56Ⅴ. Pinout and package of MPSA56Ⅵ. How does MPSA56 work?Ⅶ. How does the MPSA56 transistor... -
28 September 2023
TIP35C Footprint, Package, Application and Other Details
Ⅰ. Overview of TIP35CⅡ. Symbol and footprint of TIP35CⅢ. Technical parametersⅣ. Features of TIP35CⅤ. Pinout and package of TIP35CⅥ. Working principle of TIP35C audio power amplifierⅦ. Application of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.