DMN2500UFB4-7

Diodes Incorporated DMN2500UFB4-7

Part Number:
DMN2500UFB4-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479163-DMN2500UFB4-7
Description:
MOSFET N-CH 20V 0.81A 3DFN
ECAD Model:
Datasheet:
DMN2500UFB4

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Specifications
Diodes Incorporated DMN2500UFB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2500UFB4-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    460mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    400m Ω @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    60.67pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    810mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.74nC @ 4.5V
  • Rise Time
    7.4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±6V
  • Fall Time (Typ)
    12.3 ns
  • Turn-Off Delay Time
    26.7 ns
  • Continuous Drain Current (ID)
    810mA
  • Gate to Source Voltage (Vgs)
    6V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain-source On Resistance-Max
    0.4Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Height
    350μm
  • Length
    1.05mm
  • Width
    650μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2500UFB4-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 60.67pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 810mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

DMN2500UFB4-7 Features
a continuous drain current (ID) of 810mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns


DMN2500UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2500UFB4-7 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMN2500UFB4-7 More Descriptions
Single N-Channel 20 V 0.7 Ohm 736.6 pC 0.46 W Silicon SMT Mosfet - XFDFN-3
MOSFET,N Channel,Trans,20V 1A DFN3 | Diodes Inc DMN2500UFB4-7
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN T/R
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to DMN2500UFB4-7.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Drain to Source Voltage (Vdss)
    Weight
    Resistance
    Terminal Form
    Pin Count
    Power Dissipation
    Threshold Voltage
    Max Junction Temperature (Tj)
    JESD-30 Code
    View Compare
  • DMN2500UFB4-7
    DMN2500UFB4-7
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    1
    1
    460mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    5.1 ns
    N-Channel
    SWITCHING
    400m Ω @ 600mA, 4.5V
    1V @ 250μA
    60.67pF @ 16V
    810mA Ta
    0.74nC @ 4.5V
    7.4ns
    1.8V 4.5V
    ±6V
    12.3 ns
    26.7 ns
    810mA
    6V
    1A
    0.4Ohm
    20V
    350μm
    1.05mm
    650μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN2026UVT-13
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1.15W Ta
    -
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    887pF @ 10V
    6.2A Tc
    18.4nC @ 8V
    -
    2.5V 4.5V
    ±10V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    16 Weeks
    20V
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN26D0UT-7
    Surface Mount
    Surface Mount
    SOT-523
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    40
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    -
    3.8 ns
    N-Channel
    SWITCHING
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    -
    7.9ns
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    10V
    -
    -
    20V
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    14 Weeks
    -
    2.012816mg
    3Ohm
    GULL WING
    3
    300mW
    1V
    150°C
    -
  • DMN2022UFDF-7
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    1
    1
    660mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    18nC @ 8V
    87ns
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    8V
    -
    0.05Ohm
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    14 Weeks
    -
    -
    -
    NO LEAD
    -
    -
    -
    -
    S-PDSO-N6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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