DMN2300U-7

Diodes Incorporated DMN2300U-7

Part Number:
DMN2300U-7
Manufacturer:
Diodes Incorporated
Ventron No:
2848497-DMN2300U-7
Description:
MOSFET N-CH 20V 1.24A SOT23
ECAD Model:
Datasheet:
DMN2300U-7

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Specifications
Diodes Incorporated DMN2300U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2300U-7.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    430mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    3.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    175m Ω @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id
    950mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    64.3pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.24A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.6nC @ 4.5V
  • Rise Time
    2.8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    1.4A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2300U-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 64.3pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 3.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

DMN2300U-7 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns


DMN2300U-7 Applications
There are a lot of Diodes Incorporated
DMN2300U-7 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN2300U-7 More Descriptions
N-Channel 20 V 80 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 20V 1.4A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 1.24A, 150Degc, 0.43W Rohs Compliant: Yes |Diodes Inc. DMN2300U-7
20V N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN2300U-7
Product Comparison
The three parts on the right have similar specifications to DMN2300U-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Resistance
    Power Dissipation
    Threshold Voltage
    Max Junction Temperature (Tj)
    JESD-30 Code
    Case Connection
    Drain-source On Resistance-Max
    View Compare
  • DMN2300U-7
    DMN2300U-7
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY, LOW THRESHOLD
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    430mW Ta
    Single
    ENHANCEMENT MODE
    3.5 ns
    N-Channel
    SWITCHING
    175m Ω @ 300mA, 4.5V
    950mV @ 250μA
    64.3pF @ 25V
    1.24A Ta
    1.6nC @ 4.5V
    2.8ns
    1.8V 4.5V
    ±8V
    13 ns
    38 ns
    1.4A
    8V
    20V
    1.1mm
    3mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN2026UVT-13
    16 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.15W Ta
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    887pF @ 10V
    6.2A Tc
    18.4nC @ 8V
    -
    2.5V 4.5V
    ±10V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    20V
    -
    -
    -
    -
    -
    -
    -
  • DMN26D0UT-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    3.8 ns
    N-Channel
    SWITCHING
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    -
    7.9ns
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    10V
    20V
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    3Ohm
    300mW
    1V
    150°C
    -
    -
    -
  • DMN2022UFDF-7
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    30
    -
    1
    1
    660mW Ta
    Single
    ENHANCEMENT MODE
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    18nC @ 8V
    87ns
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    8V
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    S-PDSO-N6
    DRAIN
    0.05Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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