Diodes Incorporated DMN2300U-7
- Part Number:
- DMN2300U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848497-DMN2300U-7
- Description:
- MOSFET N-CH 20V 1.24A SOT23
- Datasheet:
- DMN2300U-7
Diodes Incorporated DMN2300U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2300U-7.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max430mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time3.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs175m Ω @ 300mA, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds64.3pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.24A Ta
- Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
- Rise Time2.8ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)1.4A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2300U-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 64.3pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 3.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMN2300U-7 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
DMN2300U-7 Applications
There are a lot of Diodes Incorporated
DMN2300U-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 64.3pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 3.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMN2300U-7 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
DMN2300U-7 Applications
There are a lot of Diodes Incorporated
DMN2300U-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN2300U-7 More Descriptions
N-Channel 20 V 80 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 20V 1.4A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 1.24A, 150Degc, 0.43W Rohs Compliant: Yes |Diodes Inc. DMN2300U-7
20V N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN2300U-7
Trans MOSFET N-CH 20V 1.4A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 1.24A, 150Degc, 0.43W Rohs Compliant: Yes |Diodes Inc. DMN2300U-7
20V N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN2300U-7
The three parts on the right have similar specifications to DMN2300U-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)ResistancePower DissipationThreshold VoltageMax Junction Temperature (Tj)JESD-30 CodeCase ConnectionDrain-source On Resistance-MaxView Compare
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DMN2300U-717 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY, LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311430mW TaSingleENHANCEMENT MODE3.5 nsN-ChannelSWITCHING175m Ω @ 300mA, 4.5V950mV @ 250μA64.3pF @ 25V1.24A Ta1.6nC @ 4.5V2.8ns1.8V 4.5V±8V13 ns38 ns1.4A8V20V1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
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16 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---1.15W Ta---N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA887pF @ 10V6.2A Tc18.4nC @ 8V-2.5V 4.5V±10V--6.2A-------ROHS3 Compliant-20V-------
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14 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311300mW TaSingleENHANCEMENT MODE3.8 nsN-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta-7.9ns1.2V 4.5V±10V15.2 ns13.4 ns230mA10V20V900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free-3Ohm300mW1V150°C---
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14 WeeksSurface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALNO LEAD26030-11660mW TaSingleENHANCEMENT MODE56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta18nC @ 8V87ns1.5V 4.5V±8V239 ns632 ns7.9A8V20V-----ROHS3 Compliant------S-PDSO-N6DRAIN0.05Ohm
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