DMN2020LSN-7

Diodes Incorporated DMN2020LSN-7

Part Number:
DMN2020LSN-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479697-DMN2020LSN-7
Description:
MOSFET N-CH 20V 6.9A SC59
ECAD Model:
Datasheet:
DMN2020LSN-7

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Specifications
Diodes Incorporated DMN2020LSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2020LSN-7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    610mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    610mW
  • Turn On Delay Time
    11.67 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1149pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6.9A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    11.6nC @ 4.5V
  • Rise Time
    12.49ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    12.33 ns
  • Turn-Off Delay Time
    35.89 ns
  • Continuous Drain Current (ID)
    6.9A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.02Ohm
  • DS Breakdown Voltage-Min
    20V
  • Height
    1.3mm
  • Length
    3.1mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2020LSN-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1149pF @ 10V.This device has a continuous drain current (ID) of [6.9A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35.89 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11.67 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

DMN2020LSN-7 Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 35.89 ns
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)


DMN2020LSN-7 Applications
There are a lot of Diodes Incorporated
DMN2020LSN-7 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMN2020LSN-7 More Descriptions
DMN2020LSN Series 20V 6.9 A N-Channel Enhancement Mode Mosfet - SC-59-3
Trans MOSFET N-CH 20V 6.9A Automotive 3-Pin SC-59 T/R
MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 610mW; Transistor Case Style: SC-59; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 6.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
Product Comparison
The three parts on the right have similar specifications to DMN2020LSN-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Resistance
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Radiation Hardening
    JESD-30 Code
    Case Connection
    View Compare
  • DMN2020LSN-7
    DMN2020LSN-7
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    Not Qualified
    1
    1
    610mW Ta
    Single
    ENHANCEMENT MODE
    610mW
    11.67 ns
    N-Channel
    SWITCHING
    20m Ω @ 9.4A, 4.5V
    1.5V @ 250μA
    1149pF @ 10V
    6.9A Ta
    11.6nC @ 4.5V
    12.49ns
    20V
    2.5V 4.5V
    ±12V
    12.33 ns
    35.89 ns
    6.9A
    1V
    12V
    0.02Ohm
    20V
    1.3mm
    3.1mm
    1.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • DMN2400UFDQ-7
    6 Weeks
    -
    Surface Mount
    3-PowerUDFN
    3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    400mW Ta
    -
    -
    -
    -
    N-Channel
    -
    600m Ω @ 200mA, 4.5V
    1V @ 250μA
    37pF @ 16V
    900mA Ta
    0.5nC @ 4.5V
    -
    20V
    1.5V 4.5V
    ±12V
    -
    -
    900mA
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMN26D0UT-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    300mW
    3.8 ns
    N-Channel
    SWITCHING
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    -
    7.9ns
    -
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    1V
    10V
    -
    -
    900μm
    1.7mm
    850μm
    No SVHC
    ROHS3 Compliant
    Lead Free
    3Ohm
    20V
    150°C
    No
    -
    -
  • DMN2022UFDF-7
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    30
    -
    -
    1
    1
    660mW Ta
    Single
    ENHANCEMENT MODE
    -
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    18nC @ 8V
    87ns
    -
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    -
    8V
    0.05Ohm
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    20V
    -
    -
    S-PDSO-N6
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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