Diodes Incorporated DMN2020LSN-7
- Part Number:
- DMN2020LSN-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479697-DMN2020LSN-7
- Description:
- MOSFET N-CH 20V 6.9A SC59
- Datasheet:
- DMN2020LSN-7
Diodes Incorporated DMN2020LSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2020LSN-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max610mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation610mW
- Turn On Delay Time11.67 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1149pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6.9A Ta
- Gate Charge (Qg) (Max) @ Vgs11.6nC @ 4.5V
- Rise Time12.49ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)12.33 ns
- Turn-Off Delay Time35.89 ns
- Continuous Drain Current (ID)6.9A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.02Ohm
- DS Breakdown Voltage-Min20V
- Height1.3mm
- Length3.1mm
- Width1.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2020LSN-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1149pF @ 10V.This device has a continuous drain current (ID) of [6.9A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35.89 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11.67 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
DMN2020LSN-7 Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 35.89 ns
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)
DMN2020LSN-7 Applications
There are a lot of Diodes Incorporated
DMN2020LSN-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1149pF @ 10V.This device has a continuous drain current (ID) of [6.9A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35.89 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11.67 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
DMN2020LSN-7 Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 35.89 ns
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)
DMN2020LSN-7 Applications
There are a lot of Diodes Incorporated
DMN2020LSN-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMN2020LSN-7 More Descriptions
DMN2020LSN Series 20V 6.9 A N-Channel Enhancement Mode Mosfet - SC-59-3
Trans MOSFET N-CH 20V 6.9A Automotive 3-Pin SC-59 T/R
MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 610mW; Transistor Case Style: SC-59; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 6.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
Trans MOSFET N-CH 20V 6.9A Automotive 3-Pin SC-59 T/R
MOSFET, N-CH, 20V, SC-59-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 610mW; Transistor Case Style: SC-59; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 6.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
The three parts on the right have similar specifications to DMN2020LSN-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeResistanceDrain to Source Breakdown VoltageMax Junction Temperature (Tj)Radiation HardeningJESD-30 CodeCase ConnectionView Compare
-
DMN2020LSN-716 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2011e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260403Not Qualified11610mW TaSingleENHANCEMENT MODE610mW11.67 nsN-ChannelSWITCHING20m Ω @ 9.4A, 4.5V1.5V @ 250μA1149pF @ 10V6.9A Ta11.6nC @ 4.5V12.49ns20V2.5V 4.5V±12V12.33 ns35.89 ns6.9A1V12V0.02Ohm20V1.3mm3.1mm1.7mmNo SVHCROHS3 CompliantLead Free-------
-
6 Weeks-Surface Mount3-PowerUDFN3---55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)-EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----400mW Ta----N-Channel-600m Ω @ 200mA, 4.5V1V @ 250μA37pF @ 16V900mA Ta0.5nC @ 4.5V-20V1.5V 4.5V±12V--900mA--------ROHS3 Compliant-------
-
14 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260403-11300mW TaSingleENHANCEMENT MODE300mW3.8 nsN-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta-7.9ns-1.2V 4.5V±10V15.2 ns13.4 ns230mA1V10V--900μm1.7mm850μmNo SVHCROHS3 CompliantLead Free3Ohm20V150°CNo--
-
14 WeeksSurface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALNO LEAD26030--11660mW TaSingleENHANCEMENT MODE-56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta18nC @ 8V87ns-1.5V 4.5V±8V239 ns632 ns7.9A-8V0.05Ohm-----ROHS3 Compliant--20V--S-PDSO-N6DRAIN
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
24 November 2023
6N136 High Speed Optocoupler Pin Configuration, Features and Working principle
Ⅰ. Overview of 6N136 optocouplerⅡ. Symbol, footprint and pin configuration of 6N136 optocouplerⅢ. Features of 6N136 optocouplerⅣ. Technical parameters of 6N136 optocouplerⅤ. Applications of 6N136 optocouplerⅥ. Working principle... -
24 November 2023
An Introduction to the PCA9685 16-Channel Servo Controller Module
Ⅰ. Overview of PCA9685Ⅱ. Manufacturer of PCA9685Ⅲ. Pin configuration of PCA9685Ⅳ. What are the features of PCA9685?Ⅴ. How does the PCA9685 work?Ⅵ. What are the applications of PCA9685?Ⅶ.... -
27 November 2023
TL082 Operational Amplifier Equivalents, Features, TL072 vs TL082 and Applications
Ⅰ. Overview of TL082 operational amplifierⅡ. Features of TL082 operational amplifierⅢ. Pin configuration of TL082 operational amplifierⅣ. How does the output short-circuit protection function of TL082 work?Ⅴ. Functional... -
27 November 2023
BT151 SCR Features, Pin Configuration, Working Principle and Applications
Ⅰ. What is a one-way thyristor?Ⅱ. Overview of BT151Ⅲ. What are the features of BT151?Ⅳ. Footprint and pin configuration of BT151Ⅴ. Technical parameters of BT151Ⅵ. How to measure...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.