Diodes Incorporated DMN1150UFB-7B

Name: DMN1150UFB-7B
Brand: Diodes Incorporated
SKU: 2478919-DMN1150UFB-7B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN1150UFB-7B

Manufacturer:: Diodes Incorporated

Ventron No:: 2478919-DMN1150UFB-7B

Description:: MOSFET N-CH 12V 1.41A 3DFN

ECAD Model:

Datasheet:: DMN1150UFB-7B

Specifications

Diodes Incorporated DMN1150UFB-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1150UFB-7B.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
4.1 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
106pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.41A Ta
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Rise Time
34.5ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±6V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
57 ns
Continuous Drain Current (ID)
1.41A
Gate to Source Voltage (Vgs)
6V
Drain to Source Breakdown Voltage
12V
Height
480μm
Length
1.08mm
Width
675μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN1150UFB-7B Overview
The maximum input capacitance of this device is 106pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.41A.When VGS=12V, and ID flows to VDS at 12VVDS, the drain-source breakdown voltage is 12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 57 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

DMN1150UFB-7B Features
a continuous drain current (ID) of 1.41A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 57 ns

DMN1150UFB-7B Applications
There are a lot of Diodes Incorporated
DMN1150UFB-7B applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

DMN1150UFB-7B More Descriptions

Mosfet, N-Ch, 12V, 1.41A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN1150UFB-7B
Single N-Channel 12 V 210 mOhm 1.5 nC 0.5 W Silicon SMT Mosfet - UFDFN-3
Trans MOSFET N-CH 12V 1.41A Automotive T/R
Trans MOSFET N-CH 12V 1.41A 3-Pin X1-DFN T/R
12V 1.41A 500mW 150mΩ@4.5V,1A N Channel DFN-3(0.6x1) MOSFETs ROHS
Small Signal Field-Effect Transistor, 1.41A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 12V VDS, 6±V VGSDiodes Inc SCT
N-CH 12V 1,41A 150mOhm at 4,5V
MOSFET, N-CH, 12V, 1.41A, X1-DFN1006;

Product Comparison

The three parts on the right have similar specifications to DMN1150UFB-7B.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Drain to Source Voltage (Vdss)

Weight

Capacitance

Terminal Form

JESD-30 Code

View Compare
DMN1150UFB-7B

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

3-UFDFN

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2013

e4

Active

1 (Unlimited)

3

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

BOTTOM

260

30

1

1

500mW Ta

Single

ENHANCEMENT MODE

DRAIN

4.1 ns

N-Channel

SWITCHING

150m Ω @ 1A, 4.5V

1V @ 250μA

106pF @ 10V

1.41A Ta

1.5nC @ 4.5V

34.5ns

1.8V 4.5V

±6V

30 ns

57 ns

1.41A

6V

12V

480μm

1.08mm

675μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
DMN10H170SVTQ-13

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

1.2W Ta

-

-

-

-

N-Channel

-

160m Ω @ 5A, 10V

3V @ 250μA

1167pF @ 25V

2.6A Ta

9.7nC @ 10V

-

4.5V 10V

±20V

-

-

2.6A

-

-

-

-

-

-

-

ROHS3 Compliant

-

yes

100V

-

-

-

-

DMN1150UFB-7B vs DMN10H170SVTQ-13
DMN1019USN-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

DUAL

NOT SPECIFIED

NOT SPECIFIED

1

1

680mW Ta

Single

ENHANCEMENT MODE

-

7.6 ns

N-Channel

SWITCHING

10m Ω @ 9.7A, 4.5V

800mV @ 250μA

2426pF @ 10V

9.3A Ta

50.6nC @ 8V

57.6ns

1.2V 2.5V

±8V

16.8 ns

22.2 ns

9.3A

4.5V

12V

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

7.994566mg

2.426nF

GULL WING

R-PDSO-G3

DMN1150UFB-7B vs DMN1019USN-7
DMN1054UCB4-7

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

4-XFBGA, WLBGA

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

e1

Active

1 (Unlimited)

-

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

740mW Ta

-

-

-

-

N-Channel

-

42m Ω @ 1A, 4.5V

700mV @ 250μA

908pF @ 6V

2.7A Ta

15nC @ 4.5V

-

1.2V 4.5V

±5V

-

-

2.7A

-

-

-

-

-

-

-

ROHS3 Compliant

-

yes

8V

-

-

-

-

DMN1150UFB-7B vs DMN1054UCB4-7