Diodes Incorporated DMN10H099SK3-13

DMN10H099SK3-13 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 28.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1172pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 17A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

DMN10H099SK3-13 Features
the avalanche energy rating (Eas) is 28.5 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 20 ns
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)


DMN10H099SK3-13 Applications
There are a lot of Diodes Incorporated
DMN10H099SK3-13 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies