Diodes Incorporated DMN1032UCB4-7
- Part Number:
- DMN1032UCB4-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483471-DMN1032UCB4-7
- Description:
- MOSFET N-CH 12V 4.8A U-WLB1010-4
- Datasheet:
- DMN1032UCB4-7
Diodes Incorporated DMN1032UCB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1032UCB4-7.
- Factory Lead Time34 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-UFBGA, WLBGA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max900mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time3.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 6V
- Current - Continuous Drain (Id) @ 25°C4.8A Ta
- Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
- Rise Time5.6ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)4.8A
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.038Ohm
- Drain to Source Breakdown Voltage12V
- RoHS StatusROHS3 Compliant
DMN1032UCB4-7 Overview
A device's maximal input capacitance is 450pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 12V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMN1032UCB4-7 Features
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 24 ns
DMN1032UCB4-7 Applications
There are a lot of Diodes Incorporated
DMN1032UCB4-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 450pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 12V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMN1032UCB4-7 Features
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 24 ns
DMN1032UCB4-7 Applications
There are a lot of Diodes Incorporated
DMN1032UCB4-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN1032UCB4-7 More Descriptions
Mosfet, N-Ch, 12V, 4.8A, U-Wlb1010 Rohs Compliant: Yes |Diodes Inc. DMN1032UCB4-7
Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R / MOSFET N-CH 12V 4.8A U-WLB1010-4
Single N-Channel 12 V 0.9 W 4.5 nC Silicon Surface Mount Mosfet - U-WLB1010-4
Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R / MOSFET N-CH 12V 4.8A U-WLB1010-4
Single N-Channel 12 V 0.9 W 4.5 nC Silicon Surface Mount Mosfet - U-WLB1010-4
The three parts on the right have similar specifications to DMN1032UCB4-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusPbfree CodeDrain to Source Voltage (Vdss)WeightCapacitanceJESD-30 CodeLead FreeView Compare
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DMN1032UCB4-734 WeeksSurface MountSurface Mount4-UFBGA, WLBGA4SILICON-55°C~150°C TJTape & Reel (TR)2015e1Active1 (Unlimited)4EAR99Tin/Silver/Copper (Sn/Ag/Cu)HIGH RELIABILITYMOSFET (Metal Oxide)BOTTOMBALLNOT SPECIFIEDNOT SPECIFIED11900mW TaSingleENHANCEMENT MODE3.3 nsN-ChannelSWITCHING26m Ω @ 1A, 4.5V1.2V @ 250μA450pF @ 6V4.8A Ta4.5nC @ 4.5V5.6ns1.8V 4.5V±8V9 ns24 ns4.8A8V0.038Ohm12VROHS3 Compliant-------
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23 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED--1.2W Ta---N-Channel-160m Ω @ 5A, 10V3V @ 250μA1167pF @ 25V2.6A Ta9.7nC @ 10V-4.5V 10V±20V--2.6A---ROHS3 Compliantyes100V----
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16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED11680mW TaSingleENHANCEMENT MODE7.6 nsN-ChannelSWITCHING10m Ω @ 9.7A, 4.5V800mV @ 250μA2426pF @ 10V9.3A Ta50.6nC @ 8V57.6ns1.2V 2.5V±8V16.8 ns22.2 ns9.3A4.5V-12VROHS3 Compliant--7.994566mg2.426nFR-PDSO-G3Lead Free
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17 WeeksSurface MountSurface Mount4-XFBGA, WLBGA---55°C~150°C TJTape & Reel (TR)2016e1Active1 (Unlimited)-EAR99Tin/Silver/Copper (Sn/Ag/Cu)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED--740mW Ta---N-Channel-42m Ω @ 1A, 4.5V700mV @ 250μA908pF @ 6V2.7A Ta15nC @ 4.5V-1.2V 4.5V±5V--2.7A---ROHS3 Compliantyes8V----
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