DMN1032UCB4-7

Diodes Incorporated DMN1032UCB4-7

Part Number:
DMN1032UCB4-7
Manufacturer:
Diodes Incorporated
Ventron No:
2483471-DMN1032UCB4-7
Description:
MOSFET N-CH 12V 4.8A U-WLB1010-4
ECAD Model:
Datasheet:
DMN1032UCB4-7

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Specifications
Diodes Incorporated DMN1032UCB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1032UCB4-7.
  • Factory Lead Time
    34 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-UFBGA, WLBGA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    900mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    3.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4.5nC @ 4.5V
  • Rise Time
    5.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    4.8A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.038Ohm
  • Drain to Source Breakdown Voltage
    12V
  • RoHS Status
    ROHS3 Compliant
Description
DMN1032UCB4-7 Overview
A device's maximal input capacitance is 450pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 12V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

DMN1032UCB4-7 Features
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 24 ns


DMN1032UCB4-7 Applications
There are a lot of Diodes Incorporated
DMN1032UCB4-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN1032UCB4-7 More Descriptions
Mosfet, N-Ch, 12V, 4.8A, U-Wlb1010 Rohs Compliant: Yes |Diodes Inc. DMN1032UCB4-7
Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R / MOSFET N-CH 12V 4.8A U-WLB1010-4
Single N-Channel 12 V 0.9 W 4.5 nC Silicon Surface Mount Mosfet - U-WLB1010-4
Product Comparison
The three parts on the right have similar specifications to DMN1032UCB4-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Pbfree Code
    Drain to Source Voltage (Vdss)
    Weight
    Capacitance
    JESD-30 Code
    Lead Free
    View Compare
  • DMN1032UCB4-7
    DMN1032UCB4-7
    34 Weeks
    Surface Mount
    Surface Mount
    4-UFBGA, WLBGA
    4
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e1
    Active
    1 (Unlimited)
    4
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    NOT SPECIFIED
    NOT SPECIFIED
    1
    1
    900mW Ta
    Single
    ENHANCEMENT MODE
    3.3 ns
    N-Channel
    SWITCHING
    26m Ω @ 1A, 4.5V
    1.2V @ 250μA
    450pF @ 6V
    4.8A Ta
    4.5nC @ 4.5V
    5.6ns
    1.8V 4.5V
    ±8V
    9 ns
    24 ns
    4.8A
    8V
    0.038Ohm
    12V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMN10H170SVTQ-13
    23 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1.2W Ta
    -
    -
    -
    N-Channel
    -
    160m Ω @ 5A, 10V
    3V @ 250μA
    1167pF @ 25V
    2.6A Ta
    9.7nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    2.6A
    -
    -
    -
    ROHS3 Compliant
    yes
    100V
    -
    -
    -
    -
  • DMN1019USN-7
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    1
    680mW Ta
    Single
    ENHANCEMENT MODE
    7.6 ns
    N-Channel
    SWITCHING
    10m Ω @ 9.7A, 4.5V
    800mV @ 250μA
    2426pF @ 10V
    9.3A Ta
    50.6nC @ 8V
    57.6ns
    1.2V 2.5V
    ±8V
    16.8 ns
    22.2 ns
    9.3A
    4.5V
    -
    12V
    ROHS3 Compliant
    -
    -
    7.994566mg
    2.426nF
    R-PDSO-G3
    Lead Free
  • DMN1054UCB4-7
    17 Weeks
    Surface Mount
    Surface Mount
    4-XFBGA, WLBGA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e1
    Active
    1 (Unlimited)
    -
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    740mW Ta
    -
    -
    -
    N-Channel
    -
    42m Ω @ 1A, 4.5V
    700mV @ 250μA
    908pF @ 6V
    2.7A Ta
    15nC @ 4.5V
    -
    1.2V 4.5V
    ±5V
    -
    -
    2.7A
    -
    -
    -
    ROHS3 Compliant
    yes
    8V
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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