Diodes Incorporated DMN1019USN-13
- Part Number:
- DMN1019USN-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478981-DMN1019USN-13
- Description:
- MOSFET N-CH 12V 9.3A SC59
- Datasheet:
- DMN1019USN-13
Diodes Incorporated DMN1019USN-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1019USN-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Channels1
- Power Dissipation-Max680mW Ta
- Element ConfigurationSingle
- Turn On Delay Time7.6 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs10m Ω @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id800mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2426pF @ 10V
- Current - Continuous Drain (Id) @ 25°C9.3A Ta
- Gate Charge (Qg) (Max) @ Vgs50.6nC @ 8V
- Rise Time57.6ns
- Drive Voltage (Max Rds On,Min Rds On)1.2V 2.5V
- Vgs (Max)±8V
- Fall Time (Typ)16.8 ns
- Turn-Off Delay Time22.2 ns
- Continuous Drain Current (ID)9.3A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage12V
- RoHS StatusROHS3 Compliant
DMN1019USN-13 Overview
A device's maximum input capacitance is 2426pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=12V, and this device has a drain-to-source breakdown voltage of 12V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22.2 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.2V 2.5V) to reduce its overall power consumption.
DMN1019USN-13 Features
a continuous drain current (ID) of 9.3A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 22.2 ns
DMN1019USN-13 Applications
There are a lot of Diodes Incorporated
DMN1019USN-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2426pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=12V, and this device has a drain-to-source breakdown voltage of 12V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22.2 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.2V 2.5V) to reduce its overall power consumption.
DMN1019USN-13 Features
a continuous drain current (ID) of 9.3A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 22.2 ns
DMN1019USN-13 Applications
There are a lot of Diodes Incorporated
DMN1019USN-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMN1019USN-13 More Descriptions
DMN1019 Series 12 V 9.3 A N-Channel Enhancement Mode Mosfet - SC-59-3
Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes |Diodes Inc. DMN1019USN-13
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 530mV; Power Dissipation Pd: 680mW; Transistor Case Style: SC-59; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes |Diodes Inc. DMN1019USN-13
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 530mV; Power Dissipation Pd: 680mW; Transistor Case Style: SC-59; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMN1019USN-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusPbfree CodeDrain to Source Voltage (Vdss)Transistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormBase Part NumberJESD-30 CodeNumber of ElementsOperating ModePower DissipationTransistor ApplicationDrain-source On Resistance-MaxMax Junction Temperature (Tj)HeightConfigurationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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DMN1019USN-1316 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED1680mW TaSingle7.6 nsN-Channel10m Ω @ 9.7A, 4.5V800mV @ 250μA2426pF @ 10V9.3A Ta50.6nC @ 8V57.6ns1.2V 2.5V±8V16.8 ns22.2 ns9.3A8V12VROHS3 Compliant---------------------
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23 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED-1.2W Ta--N-Channel160m Ω @ 5A, 10V3V @ 250μA1167pF @ 25V2.6A Ta9.7nC @ 10V-4.5V 10V±20V--2.6A--ROHS3 Compliantyes100V------------------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-31.437803g-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)--11.3W TaSingle6.8 nsN-Channel220m Ω @ 1.6A, 10V2.5V @ 250μA401pF @ 25V1.4A Ta8.3nC @ 10V8.2ns4.5V 10V±16V3.6 ns7.9 ns1.4A16V100VROHS3 Compliant--SILICON3HIGH RELIABILITYDUALGULL WINGDMN10H220R-PDSO-G31ENHANCEMENT MODE1.3WSWITCHING0.22Ohm150°C1.1mm----
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14 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED-1.73W Ta--N-Channel10m Ω @ 9.7A, 4.5V800mV @ 250μA2588pF @ 10V10.7A Ta50.4nC @ 8V-1.2V 4.5V±8V--10.7A--ROHS3 Compliant-12VSILICON6-DUALGULL WING-R-PDSO-G61ENHANCEMENT MODE-SWITCHING0.01Ohm--SINGLE WITH BUILT-IN DIODE70A12V4.7 mJ
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