Diodes Incorporated DMG3414U-7
- Part Number:
- DMG3414U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478043-DMG3414U-7
- Description:
- MOSFET N-CH 20V 4.2A SOT23
- Datasheet:
- DMG3414U-7
Diodes Incorporated DMG3414U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3414U-7.
- Factory Lead Time22 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max780mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation780mW
- Turn On Delay Time8.1 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds829.9pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta
- Gate Charge (Qg) (Max) @ Vgs9.6nC @ 4.5V
- Rise Time8.3ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)9.6 ns
- Turn-Off Delay Time40.1 ns
- Continuous Drain Current (ID)4.2A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG3414U-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 829.9pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
DMG3414U-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 40.1 ns
DMG3414U-7 Applications
There are a lot of Diodes Incorporated
DMG3414U-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 829.9pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
DMG3414U-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 40.1 ns
DMG3414U-7 Applications
There are a lot of Diodes Incorporated
DMG3414U-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMG3414U-7 More Descriptions
Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
N-Channel 20 V 2.5 mOhm Surface Mount Enhancement Mode Transistor SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG3414U-7
MOSFET N-Channel 20V 4.2A SOT23 | Diodes Inc DMG3414U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.78 W
N-Channel 20 V 2.5 mOhm Surface Mount Enhancement Mode Transistor SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG3414U-7
MOSFET N-Channel 20V 4.2A SOT23 | Diodes Inc DMG3414U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.78 W
The three parts on the right have similar specifications to DMG3414U-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinDrain Current-Max (Abs) (ID)Radiation HardeningView Compare
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DMG3414U-722 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR9925mOhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260403Not Qualified11780mW TaSingleENHANCEMENT MODE780mW8.1 nsN-ChannelSWITCHING25m Ω @ 8.2A, 4.5V900mV @ 250μA829.9pF @ 10V4.2A Ta9.6nC @ 4.5V8.3ns1.8V 4.5V±8V9.6 ns40.1 ns4.2A8V20V1.1mm3mm1.4mmNo SVHCROHS3 CompliantLead Free--------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)3EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)DUALGULL WING26030--1-780mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING25m Ω @ 5.8A, 10V2V @ 250μA641pF @ 15V4.2A Ta13.2nC @ 10V-4.5V 10V±20V--4.2A------ROHS3 Compliant-R-PDSO-G3SINGLE WITH BUILT-IN DIODE30V0.025Ohm30V--
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260403-1-1.1W Ta-ENHANCEMENT MODE1.8W6 nsP-ChannelSWITCHING50m Ω @ 4.1A, 10V2.1V @ 250μA700pF @ 15V4A Ta16nC @ 10V12.9ns4.5V 10V±20V30.7 ns35.4 ns4A20V----No SVHCROHS3 Compliant--SINGLE WITH BUILT-IN DIODE30V0.05Ohm-4ANo
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5 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260403-1-700mW Ta-ENHANCEMENT MODE-9.7 nsP-ChannelSWITCHING95m Ω @ 3A, 4.5V1.3V @ 250μA857pF @ 10V3A Ta9nC @ 4.5V17.7ns1.8V 4.5V±8V64.2 ns268.8 ns3A8V20V---No SVHCROHS3 CompliantLead Free-SINGLE WITH BUILT-IN DIODE-0.095Ohm-2.5ANo
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