DMG3414U-7

Diodes Incorporated DMG3414U-7

Part Number:
DMG3414U-7
Manufacturer:
Diodes Incorporated
Ventron No:
2478043-DMG3414U-7
Description:
MOSFET N-CH 20V 4.2A SOT23
ECAD Model:
Datasheet:
DMG3414U-7

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Specifications
Diodes Incorporated DMG3414U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3414U-7.
  • Factory Lead Time
    22 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    25mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    780mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    780mW
  • Turn On Delay Time
    8.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    829.9pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9.6nC @ 4.5V
  • Rise Time
    8.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    9.6 ns
  • Turn-Off Delay Time
    40.1 ns
  • Continuous Drain Current (ID)
    4.2A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG3414U-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 829.9pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.

DMG3414U-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 40.1 ns


DMG3414U-7 Applications
There are a lot of Diodes Incorporated
DMG3414U-7 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMG3414U-7 More Descriptions
Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
N-Channel 20 V 2.5 mOhm Surface Mount Enhancement Mode Transistor SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG3414U-7
MOSFET N-Channel 20V 4.2A SOT23 | Diodes Inc DMG3414U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.78 W
Product Comparison
The three parts on the right have similar specifications to DMG3414U-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Drain Current-Max (Abs) (ID)
    Radiation Hardening
    View Compare
  • DMG3414U-7
    DMG3414U-7
    22 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    25mOhm
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    Not Qualified
    1
    1
    780mW Ta
    Single
    ENHANCEMENT MODE
    780mW
    8.1 ns
    N-Channel
    SWITCHING
    25m Ω @ 8.2A, 4.5V
    900mV @ 250μA
    829.9pF @ 10V
    4.2A Ta
    9.6nC @ 4.5V
    8.3ns
    1.8V 4.5V
    ±8V
    9.6 ns
    40.1 ns
    4.2A
    8V
    20V
    1.1mm
    3mm
    1.4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG3404L-13
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    -
    -
    1
    -
    780mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    25m Ω @ 5.8A, 10V
    2V @ 250μA
    641pF @ 15V
    4.2A Ta
    13.2nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    4.2A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    30V
    0.025Ohm
    30V
    -
    -
  • DMG3407SSN-7
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    1
    -
    1.1W Ta
    -
    ENHANCEMENT MODE
    1.8W
    6 ns
    P-Channel
    SWITCHING
    50m Ω @ 4.1A, 10V
    2.1V @ 250μA
    700pF @ 15V
    4A Ta
    16nC @ 10V
    12.9ns
    4.5V 10V
    ±20V
    30.7 ns
    35.4 ns
    4A
    20V
    -
    -
    -
    -
    No SVHC
    ROHS3 Compliant
    -
    -
    SINGLE WITH BUILT-IN DIODE
    30V
    0.05Ohm
    -
    4A
    No
  • DMG3413L-7
    5 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    1
    -
    700mW Ta
    -
    ENHANCEMENT MODE
    -
    9.7 ns
    P-Channel
    SWITCHING
    95m Ω @ 3A, 4.5V
    1.3V @ 250μA
    857pF @ 10V
    3A Ta
    9nC @ 4.5V
    17.7ns
    1.8V 4.5V
    ±8V
    64.2 ns
    268.8 ns
    3A
    8V
    20V
    -
    -
    -
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    SINGLE WITH BUILT-IN DIODE
    -
    0.095Ohm
    -
    2.5A
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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