Diodes Incorporated DMG3413L-7
- Part Number:
- DMG3413L-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481770-DMG3413L-7
- Description:
- MOSFET P-CH 20V 3A SOT23
- Datasheet:
- DMG3413L-7
Diodes Incorporated DMG3413L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3413L-7.
- Factory Lead Time5 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max700mW Ta
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time9.7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs95m Ω @ 3A, 4.5V
- Vgs(th) (Max) @ Id1.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds857pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3A Ta
- Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
- Rise Time17.7ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)64.2 ns
- Turn-Off Delay Time268.8 ns
- Continuous Drain Current (ID)3A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)2.5A
- Drain-source On Resistance-Max0.095Ohm
- Drain to Source Breakdown Voltage20V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG3413L-7 Overview
A device's maximum input capacitance is 857pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 268.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
DMG3413L-7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 268.8 ns
DMG3413L-7 Applications
There are a lot of Diodes Incorporated
DMG3413L-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 857pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 268.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
DMG3413L-7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 268.8 ns
DMG3413L-7 Applications
There are a lot of Diodes Incorporated
DMG3413L-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMG3413L-7 More Descriptions
P-Channel 20 V 95 mOhm Surface Mount Enhancement Mode Mosfet -SOT-23-3
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG3413L-7
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG3413L-7
The three parts on the right have similar specifications to DMG3413L-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageREACH SVHCRadiation HardeningRoHS StatusLead FreeBase Part NumberNumber of ChannelsElement ConfigurationPower DissipationDrain to Source Voltage (Vdss)View Compare
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DMG3413L-75 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2604031SINGLE WITH BUILT-IN DIODE700mW TaENHANCEMENT MODE9.7 nsP-ChannelSWITCHING95m Ω @ 3A, 4.5V1.3V @ 250μA857pF @ 10V3A Ta9nC @ 4.5V17.7ns1.8V 4.5V±8V64.2 ns268.8 ns3A8V2.5A0.095Ohm20VNo SVHCNoROHS3 CompliantLead Free------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJCut Tape (CT)2013e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-------1.4W Ta-1.9 nsN-Channel-52m Ω @ 4A, 10V1.4V @ 250μA464pF @ 15V4A Ta11.7nC @ 10V1.6ns2.5V 10V±12V2 ns10.3 ns4A12V--30V--ROHS3 CompliantLead FreeDMG34021Single--
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2604031SINGLE WITH BUILT-IN DIODE1.1W TaENHANCEMENT MODE6 nsP-ChannelSWITCHING50m Ω @ 4.1A, 10V2.1V @ 250μA700pF @ 15V4A Ta16nC @ 10V12.9ns4.5V 10V±20V30.7 ns35.4 ns4A20V4A0.05Ohm-No SVHCNoROHS3 Compliant----1.8W30V
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16 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)1999e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-------320mW Ta--N-Channel-4 Ω @ 400mA, 4.5V1.1V @ 250μA42pF @ 10V260mA Ta0.36nC @ 4.5V-2.7V 4.5V8V---------ROHS3 Compliant-----25V
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