DMG3413L-7

Diodes Incorporated DMG3413L-7

Part Number:
DMG3413L-7
Manufacturer:
Diodes Incorporated
Ventron No:
2481770-DMG3413L-7
Description:
MOSFET P-CH 20V 3A SOT23
ECAD Model:
Datasheet:
DMG3413L-7

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Specifications
Diodes Incorporated DMG3413L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3413L-7.
  • Factory Lead Time
    5 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    700mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    9.7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    95m Ω @ 3A, 4.5V
  • Vgs(th) (Max) @ Id
    1.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    857pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 4.5V
  • Rise Time
    17.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    64.2 ns
  • Turn-Off Delay Time
    268.8 ns
  • Continuous Drain Current (ID)
    3A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    2.5A
  • Drain-source On Resistance-Max
    0.095Ohm
  • Drain to Source Breakdown Voltage
    20V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG3413L-7 Overview
A device's maximum input capacitance is 857pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 268.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

DMG3413L-7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 268.8 ns


DMG3413L-7 Applications
There are a lot of Diodes Incorporated
DMG3413L-7 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMG3413L-7 More Descriptions
P-Channel 20 V 95 mOhm Surface Mount Enhancement Mode Mosfet -SOT-23-3
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG3413L-7
Product Comparison
The three parts on the right have similar specifications to DMG3413L-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Base Part Number
    Number of Channels
    Element Configuration
    Power Dissipation
    Drain to Source Voltage (Vdss)
    View Compare
  • DMG3413L-7
    DMG3413L-7
    5 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    700mW Ta
    ENHANCEMENT MODE
    9.7 ns
    P-Channel
    SWITCHING
    95m Ω @ 3A, 4.5V
    1.3V @ 250μA
    857pF @ 10V
    3A Ta
    9nC @ 4.5V
    17.7ns
    1.8V 4.5V
    ±8V
    64.2 ns
    268.8 ns
    3A
    8V
    2.5A
    0.095Ohm
    20V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMG3402L-7
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    2013
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1.4W Ta
    -
    1.9 ns
    N-Channel
    -
    52m Ω @ 4A, 10V
    1.4V @ 250μA
    464pF @ 15V
    4A Ta
    11.7nC @ 10V
    1.6ns
    2.5V 10V
    ±12V
    2 ns
    10.3 ns
    4A
    12V
    -
    -
    30V
    -
    -
    ROHS3 Compliant
    Lead Free
    DMG3402
    1
    Single
    -
    -
  • DMG3407SSN-7
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    1.1W Ta
    ENHANCEMENT MODE
    6 ns
    P-Channel
    SWITCHING
    50m Ω @ 4.1A, 10V
    2.1V @ 250μA
    700pF @ 15V
    4A Ta
    16nC @ 10V
    12.9ns
    4.5V 10V
    ±20V
    30.7 ns
    35.4 ns
    4A
    20V
    4A
    0.05Ohm
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    1.8W
    30V
  • DMG301NU-7
    16 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1999
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    320mW Ta
    -
    -
    N-Channel
    -
    4 Ω @ 400mA, 4.5V
    1.1V @ 250μA
    42pF @ 10V
    260mA Ta
    0.36nC @ 4.5V
    -
    2.7V 4.5V
    8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    25V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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