Diodes Incorporated DMG2305UX-13
- Part Number:
- DMG2305UX-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480851-DMG2305UX-13
- Description:
- MOSFET P-CH 20V 4.2A SOT23
- Datasheet:
- DMG2305UX-13
Diodes Incorporated DMG2305UX-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG2305UX-13.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance65MOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time10.8 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs52m Ω @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds808pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta
- Gate Charge (Qg) (Max) @ Vgs10.2nC @ 4.5V
- Rise Time13.7ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)34.7 ns
- Turn-Off Delay Time79.3 ns
- Continuous Drain Current (ID)-4.2A
- Threshold Voltage-900mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG2305UX-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 808pF @ 15V.This device conducts a continuous drain current (ID) of -4.2A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 79.3 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -900mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
DMG2305UX-13 Features
a continuous drain current (ID) of -4.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 79.3 ns
a threshold voltage of -900mV
a 20V drain to source voltage (Vdss)
DMG2305UX-13 Applications
There are a lot of Diodes Incorporated
DMG2305UX-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 808pF @ 15V.This device conducts a continuous drain current (ID) of -4.2A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 79.3 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -900mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
DMG2305UX-13 Features
a continuous drain current (ID) of -4.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 79.3 ns
a threshold voltage of -900mV
a 20V drain to source voltage (Vdss)
DMG2305UX-13 Applications
There are a lot of Diodes Incorporated
DMG2305UX-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMG2305UX-13 More Descriptions
Power MOSFET, P Channel, 20 V, 4.2 A, 52 Milliohms, SOT-23, 3 Pins, Surface Mount
P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 10K Rohs Compliant: Yes |Diodes Inc. DMG2305UX-13
MOSFET P-Ch 20V 5A Enhancement SOT23 | Diodes Inc DMG2305UX-13
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Source Voltage Vds:-20V; On Resistance
Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W.
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 10K Rohs Compliant: Yes |Diodes Inc. DMG2305UX-13
MOSFET P-Ch 20V 5A Enhancement SOT23 | Diodes Inc DMG2305UX-13
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Source Voltage Vds:-20V; On Resistance
Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W.
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMG2305UX-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinPbfree CodeDrain Current-Max (Abs) (ID)View Compare
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DMG2305UX-1323 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJDigi-Reel®2013e3Active1 (Unlimited)3EAR9965MOhmMatte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING3111.4W TaSingleENHANCEMENT MODE1.4W10.8 nsP-ChannelSWITCHING52m Ω @ 4.2A, 4.5V900mV @ 250μA808pF @ 15V4.2A Ta10.2nC @ 4.5V13.7ns20V1.8V 4.5V±8V34.7 ns79.3 ns-4.2A-900mV8V-20V150°C1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
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18 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)-EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)-----660mW Ta----N-Channel-90m Ω @ 3.6A, 4.5V1V @ 250μA130pF @ 10V2.8A Ta2.8nC @ 10V-20V2.5V 4.5V±12V--2.8A---------ROHS3 Compliant-Automotive, AEC-Q101NOT SPECIFIEDNOT SPECIFIED------
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)3EAR99-Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WING-1-840mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING160m Ω @ 1A, 4.5V1V @ 250μA156pF @ 6V2.4A Ta3.4nC @ 10V-20V1.8V 4.5V±12V--2.4A---------ROHS3 Compliant-Automotive, AEC-Q101NOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3SINGLE WITH BUILT-IN DIODE0.21Ohm20V--
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJDigi-Reel®2013e3Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING311800mW TaSingleENHANCEMENT MODE800mW12.5 nsP-ChannelSWITCHING130m Ω @ 2.8A, 4.5V1V @ 250μA608pF @ 6V2.5A Ta6.5nC @ 4.5V10.3ns20V2.5V 4.5V±8V22.2 ns46.5 ns2.7A-8V--1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-26040---20Vyes2.5A
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