DMG1013T-7

Diodes Incorporated DMG1013T-7

Part Number:
DMG1013T-7
Manufacturer:
Diodes Incorporated
Ventron No:
2477940-DMG1013T-7
Description:
MOSFET P-CH 20V 0.46A SOT-523
ECAD Model:
Datasheet:
DMG1013T-7

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  • DMG1013T-7 Detail Images
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Specifications
Diodes Incorporated DMG1013T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1013T-7.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    700mOhm
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    270mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    270mW
  • Turn On Delay Time
    5.1 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    700m Ω @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    59.76pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    460mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.622nC @ 4.5V
  • Rise Time
    8.1ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±6V
  • Fall Time (Typ)
    20.7 ns
  • Turn-Off Delay Time
    28.4 ns
  • Continuous Drain Current (ID)
    -460mA
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    6V
  • Drain Current-Max (Abs) (ID)
    0.46A
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    900μm
  • Length
    1.7mm
  • Width
    850μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG1013T-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 59.76pF @ 16V.This device has a continuous drain current (ID) of [-460mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 0.46A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 6V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

DMG1013T-7 Features
a continuous drain current (ID) of -460mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 28.4 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


DMG1013T-7 Applications
There are a lot of Diodes Incorporated
DMG1013T-7 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMG1013T-7 More Descriptions
P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523
MOSFET P-Channel 20V 0.46A SOT523 | Diodes Inc DMG1013T-7
Trans MOSFET P-CH 20V 0.46A Automotive 3-Pin SOT-523 T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
MOSFET, P CH, -20V, SOT-523; Transistor Polarity: P Channel; Continuous Drain Current Id: -460mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 0.46A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC COUNTER 4BIT SYNC BIN 16TSSOP
DMG1013T-7 Detail Images
Product Comparison
The three parts on the right have similar specifications to DMG1013T-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Series
    Terminal Finish
    Drain-source On Resistance-Max
    View Compare
  • DMG1013T-7
    DMG1013T-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    700mOhm
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    270mW Ta
    Single
    ENHANCEMENT MODE
    270mW
    5.1 ns
    P-Channel
    SWITCHING
    700m Ω @ 350mA, 4.5V
    1V @ 250μA
    59.76pF @ 16V
    460mA Ta
    0.622nC @ 4.5V
    8.1ns
    20V
    1.8V 4.5V
    ±6V
    20.7 ns
    28.4 ns
    -460mA
    -1V
    6V
    0.46A
    -20V
    150°C
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG1012T-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    -
    Active
    1 (Unlimited)
    -
    -
    400MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    1
    280mW Ta
    Single
    -
    280mW
    5.1 ns
    N-Channel
    -
    400mOhm @ 600mA, 4.5V
    1V @ 250μA
    60.67pF @ 16V
    630mA Ta
    0.74nC @ 4.5V
    7.4ns
    20V
    1.8V 4.5V
    ±6V
    12.3 ns
    26.7 ns
    630mA
    1V
    6V
    -
    20V
    -
    800μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SOT-523
    150°C
    -55°C
    60.67pF
    300mOhm
    400 mΩ
    -
    -
    -
  • DMG1013UWQ-7
    14 Weeks
    -
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    310mW Ta
    -
    -
    -
    -
    P-Channel
    -
    750m Ω @ 430mA, 4.5V
    1V @ 250μA
    59.76pF @ 16V
    820mA Ta
    0.62nC @ 4.5V
    -
    20V
    1.8V 4.5V
    ±6V
    -
    -
    820mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
    Matte Tin (Sn)
    -
  • DMG1012UW-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    6.010099mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    3
    1
    1
    290mW Ta
    Single
    ENHANCEMENT MODE
    290mW
    5.1 ns
    N-Channel
    SWITCHING
    450m Ω @ 600mA, 4.5V
    1V @ 250μA
    60.67pF @ 16V
    1A Ta
    0.74nC @ 4.5V
    7.4ns
    -
    1.8V 4.5V
    ±6V
    12.3 ns
    26.7 ns
    1A
    -
    6V
    1A
    20V
    -
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    0.45Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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