Diodes Incorporated DMG1013T-7
- Part Number:
- DMG1013T-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2477940-DMG1013T-7
- Description:
- MOSFET P-CH 20V 0.46A SOT-523
- Datasheet:
- DMG1013T-7
Diodes Incorporated DMG1013T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1013T-7.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance700mOhm
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max270mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation270mW
- Turn On Delay Time5.1 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs700m Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds59.76pF @ 16V
- Current - Continuous Drain (Id) @ 25°C460mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.622nC @ 4.5V
- Rise Time8.1ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±6V
- Fall Time (Typ)20.7 ns
- Turn-Off Delay Time28.4 ns
- Continuous Drain Current (ID)-460mA
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)6V
- Drain Current-Max (Abs) (ID)0.46A
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Height900μm
- Length1.7mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG1013T-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 59.76pF @ 16V.This device has a continuous drain current (ID) of [-460mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 0.46A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 6V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
DMG1013T-7 Features
a continuous drain current (ID) of -460mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 28.4 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
DMG1013T-7 Applications
There are a lot of Diodes Incorporated
DMG1013T-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 59.76pF @ 16V.This device has a continuous drain current (ID) of [-460mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 0.46A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 6V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
DMG1013T-7 Features
a continuous drain current (ID) of -460mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 28.4 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
DMG1013T-7 Applications
There are a lot of Diodes Incorporated
DMG1013T-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMG1013T-7 More Descriptions
P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523
MOSFET P-Channel 20V 0.46A SOT523 | Diodes Inc DMG1013T-7
Trans MOSFET P-CH 20V 0.46A Automotive 3-Pin SOT-523 T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
MOSFET, P CH, -20V, SOT-523; Transistor Polarity: P Channel; Continuous Drain Current Id: -460mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 0.46A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC COUNTER 4BIT SYNC BIN 16TSSOP
MOSFET P-Channel 20V 0.46A SOT523 | Diodes Inc DMG1013T-7
Trans MOSFET P-CH 20V 0.46A Automotive 3-Pin SOT-523 T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
MOSFET, P CH, -20V, SOT-523; Transistor Polarity: P Channel; Continuous Drain Current Id: -460mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 0.46A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC COUNTER 4BIT SYNC BIN 16TSSOP
The three parts on the right have similar specifications to DMG1013T-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxSeriesTerminal FinishDrain-source On Resistance-MaxView Compare
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DMG1013T-714 WeeksTinSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR99700mOhmHIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311270mW TaSingleENHANCEMENT MODE270mW5.1 nsP-ChannelSWITCHING700m Ω @ 350mA, 4.5V1V @ 250μA59.76pF @ 16V460mA Ta0.622nC @ 4.5V8.1ns20V1.8V 4.5V±6V20.7 ns28.4 ns-460mA-1V6V0.46A-20V150°C900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free----------
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14 WeeksTinSurface MountSurface MountSOT-52332.012816mg--55°C~150°C TJTape & Reel (TR)2012--Active1 (Unlimited)--400MOhm--MOSFET (Metal Oxide)-----11280mW TaSingle-280mW5.1 nsN-Channel-400mOhm @ 600mA, 4.5V1V @ 250μA60.67pF @ 16V630mA Ta0.74nC @ 4.5V7.4ns20V1.8V 4.5V±6V12.3 ns26.7 ns630mA1V6V-20V-800μm1.7mm850μmNo SVHCNoROHS3 CompliantLead FreeSOT-523150°C-55°C60.67pF300mOhm400 mΩ---
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14 Weeks-Surface MountSurface MountSC-70, SOT-323----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---310mW Ta----P-Channel-750m Ω @ 430mA, 4.5V1V @ 250μA59.76pF @ 16V820mA Ta0.62nC @ 4.5V-20V1.8V 4.5V±6V--820mA----------ROHS3 Compliant-------Automotive, AEC-Q101Matte Tin (Sn)-
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14 WeeksTinSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR99-HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WING--311290mW TaSingleENHANCEMENT MODE290mW5.1 nsN-ChannelSWITCHING450m Ω @ 600mA, 4.5V1V @ 250μA60.67pF @ 16V1A Ta0.74nC @ 4.5V7.4ns-1.8V 4.5V±6V12.3 ns26.7 ns1A-6V1A20V-1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free--------0.45Ohm
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