DMG1012T-7

Diodes Incorporated DMG1012T-7

Part Number:
DMG1012T-7
Manufacturer:
Diodes Incorporated
Ventron No:
2484052-DMG1012T-7
Description:
MOSFET N-CH 20V 630MA SOT-523
ECAD Model:
Datasheet:
DMG1012T-7

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Specifications
Diodes Incorporated DMG1012T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1012T-7.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Supplier Device Package
    SOT-523
  • Weight
    2.012816mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    400MOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    280mW Ta
  • Element Configuration
    Single
  • Power Dissipation
    280mW
  • Turn On Delay Time
    5.1 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    400mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    60.67pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    630mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.74nC @ 4.5V
  • Rise Time
    7.4ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±6V
  • Fall Time (Typ)
    12.3 ns
  • Turn-Off Delay Time
    26.7 ns
  • Continuous Drain Current (ID)
    630mA
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    6V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    60.67pF
  • Drain to Source Resistance
    300mOhm
  • Rds On Max
    400 mΩ
  • Height
    800μm
  • Length
    1.7mm
  • Width
    850μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG1012T-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 630mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26.7 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 300mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

DMG1012T-7 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)


DMG1012T-7 Applications
There are a lot of Diodes Incorporated
DMG1012T-7 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
DMG1012T-7 More Descriptions
Transistor MOSFET NTR4003NT1G, SOT23, ON Semi
Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R
N-Channel 20 V 400 mOhm Surface Mount Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, 0.63A, SOT-523; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CH, 20V, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMG1012T-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    Pin Count
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Subcategory
    Max Junction Temperature (Tj)
    View Compare
  • DMG1012T-7
    DMG1012T-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-523
    3
    SOT-523
    2.012816mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    400MOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    280mW Ta
    Single
    280mW
    5.1 ns
    N-Channel
    400mOhm @ 600mA, 4.5V
    1V @ 250μA
    60.67pF @ 16V
    630mA Ta
    0.74nC @ 4.5V
    7.4ns
    20V
    1.8V 4.5V
    ±6V
    12.3 ns
    26.7 ns
    630mA
    1V
    6V
    20V
    60.67pF
    300mOhm
    400 mΩ
    800μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG1013UWQ-13
    14 Weeks
    -
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    310mW Ta
    -
    -
    -
    P-Channel
    750m Ω @ 430mA, 4.5V
    1V @ 250μA
    59.76pF @ 16V
    820mA Ta
    0.62nC @ 4.5V
    -
    20V
    1.8V 4.5V
    ±6V
    -
    -
    820mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Automotive, AEC-Q101
    e3
    EAR99
    Matte Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG1012UW-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    -
    6.010099mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    290mW Ta
    Single
    290mW
    5.1 ns
    N-Channel
    450m Ω @ 600mA, 4.5V
    1V @ 250μA
    60.67pF @ 16V
    1A Ta
    0.74nC @ 4.5V
    7.4ns
    -
    1.8V 4.5V
    ±6V
    12.3 ns
    26.7 ns
    1A
    -
    6V
    20V
    -
    -
    -
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    e3
    EAR99
    -
    -
    -
    SILICON
    yes
    3
    HIGH RELIABILITY
    DUAL
    GULL WING
    3
    ENHANCEMENT MODE
    SWITCHING
    1A
    0.45Ohm
    -
    -
  • DMG1013T-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-523
    3
    -
    2.012816mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Active
    1 (Unlimited)
    700mOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    270mW Ta
    Single
    270mW
    5.1 ns
    P-Channel
    700m Ω @ 350mA, 4.5V
    1V @ 250μA
    59.76pF @ 16V
    460mA Ta
    0.622nC @ 4.5V
    8.1ns
    20V
    1.8V 4.5V
    ±6V
    20.7 ns
    28.4 ns
    -460mA
    -1V
    6V
    -20V
    -
    -
    -
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    e3
    EAR99
    -
    260
    40
    SILICON
    yes
    3
    HIGH RELIABILITY
    DUAL
    GULL WING
    3
    ENHANCEMENT MODE
    SWITCHING
    0.46A
    -
    Other Transistors
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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