Diodes Incorporated DMG1012T-7
- Part Number:
- DMG1012T-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2484052-DMG1012T-7
- Description:
- MOSFET N-CH 20V 630MA SOT-523
- Datasheet:
- DMG1012T-7
Diodes Incorporated DMG1012T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1012T-7.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Supplier Device PackageSOT-523
- Weight2.012816mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance400MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280mW Ta
- Element ConfigurationSingle
- Power Dissipation280mW
- Turn On Delay Time5.1 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds60.67pF @ 16V
- Current - Continuous Drain (Id) @ 25°C630mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.74nC @ 4.5V
- Rise Time7.4ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±6V
- Fall Time (Typ)12.3 ns
- Turn-Off Delay Time26.7 ns
- Continuous Drain Current (ID)630mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage20V
- Input Capacitance60.67pF
- Drain to Source Resistance300mOhm
- Rds On Max400 mΩ
- Height800μm
- Length1.7mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG1012T-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 630mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26.7 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 300mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMG1012T-7 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)
DMG1012T-7 Applications
There are a lot of Diodes Incorporated
DMG1012T-7 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 630mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26.7 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 300mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMG1012T-7 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)
DMG1012T-7 Applications
There are a lot of Diodes Incorporated
DMG1012T-7 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
DMG1012T-7 More Descriptions
Transistor MOSFET NTR4003NT1G, SOT23, ON Semi
Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R
N-Channel 20 V 400 mOhm Surface Mount Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, 0.63A, SOT-523; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CH, 20V, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R
N-Channel 20 V 400 mOhm Surface Mount Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, 0.63A, SOT-523; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CH, 20V, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMG1012T-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesJESD-609 CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transistor Element MaterialPbfree CodeNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxSubcategoryMax Junction Temperature (Tj)View Compare
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DMG1012T-714 WeeksTinSurface MountSurface MountSOT-5233SOT-5232.012816mg-55°C~150°C TJTape & Reel (TR)2012Active1 (Unlimited)400MOhm150°C-55°CMOSFET (Metal Oxide)11280mW TaSingle280mW5.1 nsN-Channel400mOhm @ 600mA, 4.5V1V @ 250μA60.67pF @ 16V630mA Ta0.74nC @ 4.5V7.4ns20V1.8V 4.5V±6V12.3 ns26.7 ns630mA1V6V20V60.67pF300mOhm400 mΩ800μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free--------------------
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14 Weeks-Surface MountSurface MountSC-70, SOT-323----55°C~150°C TJTape & Reel (TR)-Active1 (Unlimited)---MOSFET (Metal Oxide)--310mW Ta---P-Channel750m Ω @ 430mA, 4.5V1V @ 250μA59.76pF @ 16V820mA Ta0.62nC @ 4.5V-20V1.8V 4.5V±6V--820mA-----------ROHS3 Compliant-Automotive, AEC-Q101e3EAR99Matte Tin (Sn)NOT SPECIFIEDNOT SPECIFIED-------------
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14 WeeksTinSurface MountSurface MountSC-70, SOT-3233-6.010099mg-55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)---MOSFET (Metal Oxide)11290mW TaSingle290mW5.1 nsN-Channel450m Ω @ 600mA, 4.5V1V @ 250μA60.67pF @ 16V1A Ta0.74nC @ 4.5V7.4ns-1.8V 4.5V±6V12.3 ns26.7 ns1A-6V20V---1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free-e3EAR99---SILICONyes3HIGH RELIABILITYDUALGULL WING3ENHANCEMENT MODESWITCHING1A0.45Ohm--
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14 WeeksTinSurface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)2009Active1 (Unlimited)700mOhm--MOSFET (Metal Oxide)11270mW TaSingle270mW5.1 nsP-Channel700m Ω @ 350mA, 4.5V1V @ 250μA59.76pF @ 16V460mA Ta0.622nC @ 4.5V8.1ns20V1.8V 4.5V±6V20.7 ns28.4 ns-460mA-1V6V-20V---900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free-e3EAR99-26040SILICONyes3HIGH RELIABILITYDUALGULL WING3ENHANCEMENT MODESWITCHING0.46A-Other Transistors150°C
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