Texas Instruments CSD87384M
- Part Number:
- CSD87384M
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3585737-CSD87384M
- Description:
- 30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A
- Datasheet:
- csd87384m
Texas Instruments CSD87384M technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87384M.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case5-LGA
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Max Power Dissipation8W
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD87384
- Number of Outputs1
- Max Output Current95A
- Number of Elements2
- ConfigurationCOMPLEX
- Operating ModeENHANCEMENT MODE
- FET Type2 N-Channel (Half Bridge)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.7m Ω @ 25A, 8V
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Output Current per Channel30A
- Input Capacitance (Ciss) (Max) @ Vds1150pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs9.2nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (ID)30A
- Drain-source On Resistance-Max0.0089Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Length5mm
- Width3.5mm
- Thickness400μm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD87384M Description
A highly optimized design for synchronous buck applications, the CSD87384M NexFETTM Power Block II features high current and high efficiency capability in a compact 5.0 mm * 3.5 mm form. When used with any 5 V gate drive from an external controller or driver, this product, which is designed for 5 V gate drive applications, offers an effective and adaptable solution capable of supplying a high density power supply.
CSD87384M Features
? High Density LGA Footprint, 5 mm x 3.5 mm
? Support for double-sided cooling
? Ultra-Low Profile: Maximum 0.48 mm
? Performs best with a 5 V Gate Drive
? Minimal Switching Losses
? Lowest Possible Inductee Package
? RoHS conformant
? Free of Halogen
CSD87384M Applications
Buck converters that are synchronized
Applications for High Frequency
Applications with a High Current and Low Duty Cycle
Synchronous Buck Converters with Multiple Phases
DC-DC converters from POL
A highly optimized design for synchronous buck applications, the CSD87384M NexFETTM Power Block II features high current and high efficiency capability in a compact 5.0 mm * 3.5 mm form. When used with any 5 V gate drive from an external controller or driver, this product, which is designed for 5 V gate drive applications, offers an effective and adaptable solution capable of supplying a high density power supply.
CSD87384M Features
? High Density LGA Footprint, 5 mm x 3.5 mm
? Support for double-sided cooling
? Ultra-Low Profile: Maximum 0.48 mm
? Performs best with a 5 V Gate Drive
? Minimal Switching Losses
? Lowest Possible Inductee Package
? RoHS conformant
? Free of Halogen
CSD87384M Applications
Buck converters that are synchronized
Applications for High Frequency
Applications with a High Current and Low Duty Cycle
Synchronous Buck Converters with Multiple Phases
DC-DC converters from POL
CSD87384M More Descriptions
30-V, N channel synchronous buck NexFET™ power MOSFET, 5 mm x 3.5 mm LGA, 30 A
16-bit Microcontrollers - MCU BARRACUDA4 MOS13 L01Y
XSTR MOSFET DUAL N-CH POWER BLOCK-II
High Frequency Synchronous Power Module
16-bit Microcontrollers - MCU BARRACUDA4 MOS13 L01Y
XSTR MOSFET DUAL N-CH POWER BLOCK-II
High Frequency Synchronous Power Module
The three parts on the right have similar specifications to CSD87384M.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of OutputsMax Output CurrentNumber of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdOutput Current per ChannelInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureLengthWidthThicknessRoHS StatusLead FreeElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Feedback Cap-Max (Crss)Threshold VoltageDrain to Source ResistanceREACH SVHCNumber of FunctionsInput Voltage-NomAnalog IC - Other TypePower DissipationInput Voltage (Max)Control TechniqueSwitcher ConfigurationDrain to Source Breakdown VoltageHeightView Compare
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CSD87384MACTIVE (Last Updated: 3 days ago)12 WeeksGoldSurface MountSurface Mount5-LGA5SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99FET General Purpose Power8WBOTTOMNO LEAD260NOT SPECIFIEDCSD87384195A2COMPLEXENHANCEMENT MODE2 N-Channel (Half Bridge)SWITCHING7.7m Ω @ 25A, 8V1.9V @ 250μA30A1150pF @ 15V9.2nC @ 4.5V30V30A0.0089Ohm30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate5mm3.5mm400μmROHS3 CompliantLead Free--------------------
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ACTIVE (Last Updated: 5 days ago)6 Weeks-Surface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™-yesActive1 (Unlimited)6EAR99-2.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD83325--2-ENHANCEMENT MODE2 N-Channel (Dual) Common DrainSWITCHING-1.25V @ 250μA--10.9nC @ 4.5V12V8A--METAL-OXIDE SEMICONDUCTORStandard1.11mm2.16mm200μmROHS3 CompliantLead FreeDual205 ns353ns589 ns711 ns10V144 pF------------
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ACTIVE (Last Updated: 5 days ago)6 Weeks-Surface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™-yesActive1 (Unlimited)6--2.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD83325--2-ENHANCEMENT MODE2 N-Channel (Dual) Common DrainSWITCHING-1.25V @ 250μA--10.9nC @ 4.5V12V8A--METAL-OXIDE SEMICONDUCTORStandard1.11mm2.16mm200μmROHS3 CompliantLead FreeDual205 ns353ns589 ns711 ns10V144 pF950mV9.9mOhmNo SVHC---------
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ACTIVE (Last Updated: 3 days ago)6 WeeksGoldSurface MountSurface Mount5-LGA5--55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99-4WUNSPECIFIEDUNSPECIFIED260NOT SPECIFIEDCSD87381140A---2 N-Channel (Half Bridge)-16.3m Ω @ 8A, 8V1.9V @ 250μA15A564pF @ 15V5nC @ 4.5V30V15A---Logic Level Gate3mm2.5mm400μmROHS3 CompliantLead FreeSingle-16.3ns2.9 ns16.8 ns8V----112VSWITCHING REGULATOR4W24VPULSE WIDTH MODULATIONBUCK30V480μm
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