CSD87384M

Texas Instruments CSD87384M

Part Number:
CSD87384M
Manufacturer:
Texas Instruments
Ventron No:
3585737-CSD87384M
Description:
30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A
ECAD Model:
Datasheet:
csd87384m

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Specifications
Texas Instruments CSD87384M technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87384M.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    5-LGA
  • Number of Pins
    5
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    8W
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD87384
  • Number of Outputs
    1
  • Max Output Current
    95A
  • Number of Elements
    2
  • Configuration
    COMPLEX
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    2 N-Channel (Half Bridge)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.7m Ω @ 25A, 8V
  • Vgs(th) (Max) @ Id
    1.9V @ 250μA
  • Output Current per Channel
    30A
  • Input Capacitance (Ciss) (Max) @ Vds
    1150pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    9.2nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (ID)
    30A
  • Drain-source On Resistance-Max
    0.0089Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Length
    5mm
  • Width
    3.5mm
  • Thickness
    400μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD87384M Description
A highly optimized design for synchronous buck applications, the CSD87384M NexFETTM Power Block II features high current and high efficiency capability in a compact 5.0 mm * 3.5 mm form. When used with any 5 V gate drive from an external controller or driver, this product, which is designed for 5 V gate drive applications, offers an effective and adaptable solution capable of supplying a high density power supply.

CSD87384M Features
? High Density LGA Footprint, 5 mm x 3.5 mm
? Support for double-sided cooling
? Ultra-Low Profile: Maximum 0.48 mm
? Performs best with a 5 V Gate Drive
? Minimal Switching Losses
? Lowest Possible Inductee Package
? RoHS conformant
? Free of Halogen

CSD87384M Applications
Buck converters that are synchronized
Applications for High Frequency
Applications with a High Current and Low Duty Cycle
Synchronous Buck Converters with Multiple Phases
DC-DC converters from POL
CSD87384M More Descriptions
30-V, N channel synchronous buck NexFET™ power MOSFET, 5 mm x 3.5 mm LGA, 30 A
16-bit Microcontrollers - MCU BARRACUDA4 MOS13 L01Y
XSTR MOSFET DUAL N-CH POWER BLOCK-II
High Frequency Synchronous Power Module
Product Comparison
The three parts on the right have similar specifications to CSD87384M.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Outputs
    Max Output Current
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Output Current per Channel
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    FET Feature
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Feedback Cap-Max (Crss)
    Threshold Voltage
    Drain to Source Resistance
    REACH SVHC
    Number of Functions
    Input Voltage-Nom
    Analog IC - Other Type
    Power Dissipation
    Input Voltage (Max)
    Control Technique
    Switcher Configuration
    Drain to Source Breakdown Voltage
    Height
    View Compare
  • CSD87384M
    CSD87384M
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    8W
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD87384
    1
    95A
    2
    COMPLEX
    ENHANCEMENT MODE
    2 N-Channel (Half Bridge)
    SWITCHING
    7.7m Ω @ 25A, 8V
    1.9V @ 250μA
    30A
    1150pF @ 15V
    9.2nC @ 4.5V
    30V
    30A
    0.0089Ohm
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    5mm
    3.5mm
    400μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD83325L
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    6-XFBGA
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    -
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    2.3W
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD83325
    -
    -
    2
    -
    ENHANCEMENT MODE
    2 N-Channel (Dual) Common Drain
    SWITCHING
    -
    1.25V @ 250μA
    -
    -
    10.9nC @ 4.5V
    12V
    8A
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1.11mm
    2.16mm
    200μm
    ROHS3 Compliant
    Lead Free
    Dual
    205 ns
    353ns
    589 ns
    711 ns
    10V
    144 pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD83325LT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    6-XFBGA
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    -
    yes
    Active
    1 (Unlimited)
    6
    -
    -
    2.3W
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD83325
    -
    -
    2
    -
    ENHANCEMENT MODE
    2 N-Channel (Dual) Common Drain
    SWITCHING
    -
    1.25V @ 250μA
    -
    -
    10.9nC @ 4.5V
    12V
    8A
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1.11mm
    2.16mm
    200μm
    ROHS3 Compliant
    Lead Free
    Dual
    205 ns
    353ns
    589 ns
    711 ns
    10V
    144 pF
    950mV
    9.9mOhm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD87381P
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    4W
    UNSPECIFIED
    UNSPECIFIED
    260
    NOT SPECIFIED
    CSD87381
    1
    40A
    -
    -
    -
    2 N-Channel (Half Bridge)
    -
    16.3m Ω @ 8A, 8V
    1.9V @ 250μA
    15A
    564pF @ 15V
    5nC @ 4.5V
    30V
    15A
    -
    -
    -
    Logic Level Gate
    3mm
    2.5mm
    400μm
    ROHS3 Compliant
    Lead Free
    Single
    -
    16.3ns
    2.9 ns
    16.8 ns
    8V
    -
    -
    -
    -
    1
    12V
    SWITCHING REGULATOR
    4W
    24V
    PULSE WIDTH MODULATION
    BUCK
    30V
    480μm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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