Texas Instruments CSD83325LT
- Part Number:
- CSD83325LT
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3585748-CSD83325LT
- Description:
- 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
- ECAD Model:
-
- Datasheet:
- csd83325l
Texas Instruments CSD83325LT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD83325LT.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-XFBGA
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Max Power Dissipation2.3W
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD83325
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time205 ns
- FET Type2 N-Channel (Dual) Common Drain
- Transistor ApplicationSWITCHING
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs10.9nC @ 4.5V
- Rise Time353ns
- Drain to Source Voltage (Vdss)12V
- Fall Time (Typ)589 ns
- Turn-Off Delay Time711 ns
- Continuous Drain Current (ID)8A
- Threshold Voltage950mV
- Gate to Source Voltage (Vgs)10V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Drain to Source Resistance9.9mOhm
- Feedback Cap-Max (Crss)144 pF
- Length1.11mm
- Width2.16mm
- Thickness200μm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD83325LT Overview
This product is manufactured by Texas Instruments and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet CSD83325LT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of CSD83325LT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Texas Instruments and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet CSD83325LT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of CSD83325LT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
CSD83325LT More Descriptions
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
Transistor MOSFET Array Dual N-CH 12V 8A 6-Pin LGA T/R
MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6; Polarité transistor: Double canal N; Courant de drain Id: 8A; Tension Vds max..: 12V; Résistance Rds(on): 0.0099ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 950mV; Dissipation d
Mosfet, Dual N-Ch, 12V, 8A, Picostar-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0099Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950Mv; Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD83325LT
Transistor MOSFET Array Dual N-CH 12V 8A 6-Pin LGA T/R
MOSFET, DUAL N-CH, 12V, 8A, PICOSTAR-6; Polarité transistor: Double canal N; Courant de drain Id: 8A; Tension Vds max..: 12V; Résistance Rds(on): 0.0099ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 950mV; Dissipation d
Mosfet, Dual N-Ch, 12V, 8A, Picostar-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0099Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950Mv; Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD83325LT
The three parts on the right have similar specifications to CSD83325LT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)FET TechnologyFET FeatureDrain to Source ResistanceFeedback Cap-Max (Crss)LengthWidthThicknessREACH SVHCRoHS StatusLead FreeECCN CodeContact PlatingJESD-609 CodeSubcategoryNumber of OutputsMax Output CurrentConfigurationRds On (Max) @ Id, VgsOutput Current per ChannelInput Capacitance (Ciss) (Max) @ VdsDrain-source On Resistance-MaxDS Breakdown Voltage-MinNumber of FunctionsInput Voltage-NomAnalog IC - Other TypePower DissipationInput Voltage (Max)Control TechniqueSwitcher ConfigurationDrain to Source Breakdown VoltageHeightView Compare
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CSD83325LTACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)62.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD833252DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING1.25V @ 250μA10.9nC @ 4.5V353ns12V589 ns711 ns8A950mV10VMETAL-OXIDE SEMICONDUCTORStandard9.9mOhm144 pF1.11mm2.16mm200μmNo SVHCROHS3 CompliantLead Free---------------------- -
ACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)62.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD833252DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING1.25V @ 250μA10.9nC @ 4.5V353ns12V589 ns711 ns8A-10VMETAL-OXIDE SEMICONDUCTORStandard-144 pF1.11mm2.16mm200μm-ROHS3 CompliantLead FreeEAR99--------------------
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ACTIVE (Last Updated: 3 days ago)12 WeeksSurface MountSurface Mount5-LGA5SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)58WBOTTOMNO LEAD260NOT SPECIFIEDCSD873842-ENHANCEMENT MODE-2 N-Channel (Half Bridge)SWITCHING1.9V @ 250μA9.2nC @ 4.5V-30V--30A--METAL-OXIDE SEMICONDUCTORLogic Level Gate--5mm3.5mm400μm-ROHS3 CompliantLead FreeEAR99Golde4FET General Purpose Power195ACOMPLEX7.7m Ω @ 25A, 8V30A1150pF @ 15V0.0089Ohm30V---------
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ACTIVE (Last Updated: 3 days ago)6 WeeksSurface MountSurface Mount5-LGA5--55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)54WUNSPECIFIEDUNSPECIFIED260NOT SPECIFIEDCSD87381-Single--2 N-Channel (Half Bridge)-1.9V @ 250μA5nC @ 4.5V16.3ns30V2.9 ns16.8 ns15A-8V-Logic Level Gate--3mm2.5mm400μm-ROHS3 CompliantLead FreeEAR99Golde4-140A-16.3m Ω @ 8A, 8V15A564pF @ 15V--112VSWITCHING REGULATOR4W24VPULSE WIDTH MODULATIONBUCK30V480μm
-
30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 25 A
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
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30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A
-
30-V, N channel synchronous buck NexFET? power MOSFET, 3 mm x 2.5 mm LGA, 15 A
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