Texas Instruments CSD83325L
- Part Number:
- CSD83325L
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3585799-CSD83325L
- Description:
- 12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
- ECAD Model:
-
- Datasheet:
- csd83325l
Texas Instruments CSD83325L technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD83325L.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-XFBGA
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Power Dissipation2.3W
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD83325
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time205 ns
- FET Type2 N-Channel (Dual) Common Drain
- Transistor ApplicationSWITCHING
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs10.9nC @ 4.5V
- Rise Time353ns
- Drain to Source Voltage (Vdss)12V
- Fall Time (Typ)589 ns
- Turn-Off Delay Time711 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)10V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Feedback Cap-Max (Crss)144 pF
- Length1.11mm
- Width2.16mm
- Thickness200μm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD83325L Description
This 9.9 m, 12.0 v, 2.2 mm 1.15 mm LGA Dual NexFETTM power MOSFET has a tiny footprint and is made to have low resistance and gate charge. The device is perfect for battery pack applications in small portable devices due to its compact footprint and common drain arrangement.
CSD83325L Features
? The Typical Drain Configuration
? Reduced Resistance
? A tiny footprint measuring 2.2 mm by 1.15 mm
? Free of Lead
? RoHS conformant
? No Halogen
? ESD Gate Protection
CSD83325L Applications
Battery Administration
Battery Security
This 9.9 m, 12.0 v, 2.2 mm 1.15 mm LGA Dual NexFETTM power MOSFET has a tiny footprint and is made to have low resistance and gate charge. The device is perfect for battery pack applications in small portable devices due to its compact footprint and common drain arrangement.
CSD83325L Features
? The Typical Drain Configuration
? Reduced Resistance
? A tiny footprint measuring 2.2 mm by 1.15 mm
? Free of Lead
? RoHS conformant
? No Halogen
? ESD Gate Protection
CSD83325L Applications
Battery Administration
Battery Security
CSD83325L More Descriptions
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR
Transistor MOSFET Array Dual N-CH 12V 8A 6-Pin LGA T/R
Trans MOSFET N-CH 12V 8A 6-Pin PicoStar T/R
Audio D/A Converter ICs IC 114dB 192kHz Stereo DAC w/DSD
MOSFET 2N-CH 12V 52A 6PICOSTAR
High Frequency Synchronous Power Module
Transistor MOSFET Array Dual N-CH 12V 8A 6-Pin LGA T/R
Trans MOSFET N-CH 12V 8A 6-Pin PicoStar T/R
Audio D/A Converter ICs IC 114dB 192kHz Stereo DAC w/DSD
MOSFET 2N-CH 12V 52A 6PICOSTAR
High Frequency Synchronous Power Module
The three parts on the right have similar specifications to CSD83325L.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)FET TechnologyFET FeatureFeedback Cap-Max (Crss)LengthWidthThicknessRoHS StatusLead FreeThreshold VoltageDrain to Source ResistanceREACH SVHCContact PlatingJESD-609 CodeSubcategoryNumber of OutputsMax Output CurrentConfigurationRds On (Max) @ Id, VgsOutput Current per ChannelInput Capacitance (Ciss) (Max) @ VdsDrain-source On Resistance-MaxDS Breakdown Voltage-MinNumber of FunctionsInput Voltage-NomAnalog IC - Other TypePower DissipationInput Voltage (Max)Control TechniqueSwitcher ConfigurationDrain to Source Breakdown VoltageHeightView Compare
-
CSD83325LACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)6EAR992.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD833252DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING1.25V @ 250μA10.9nC @ 4.5V353ns12V589 ns711 ns8A10VMETAL-OXIDE SEMICONDUCTORStandard144 pF1.11mm2.16mm200μmROHS3 CompliantLead Free------------------------ -
ACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount6-XFBGA6SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)6-2.3WBOTTOMNO LEAD260NOT SPECIFIEDCSD833252DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING1.25V @ 250μA10.9nC @ 4.5V353ns12V589 ns711 ns8A10VMETAL-OXIDE SEMICONDUCTORStandard144 pF1.11mm2.16mm200μmROHS3 CompliantLead Free950mV9.9mOhmNo SVHC--------------------
-
ACTIVE (Last Updated: 3 days ago)12 WeeksSurface MountSurface Mount5-LGA5SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5EAR998WBOTTOMNO LEAD260NOT SPECIFIEDCSD873842-ENHANCEMENT MODE-2 N-Channel (Half Bridge)SWITCHING1.9V @ 250μA9.2nC @ 4.5V-30V--30A-METAL-OXIDE SEMICONDUCTORLogic Level Gate-5mm3.5mm400μmROHS3 CompliantLead Free---Golde4FET General Purpose Power195ACOMPLEX7.7m Ω @ 25A, 8V30A1150pF @ 15V0.0089Ohm30V---------
-
ACTIVE (Last Updated: 3 days ago)6 WeeksSurface MountSurface Mount5-LGA5--55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5EAR994WUNSPECIFIEDUNSPECIFIED260NOT SPECIFIEDCSD87381-Single--2 N-Channel (Half Bridge)-1.9V @ 250μA5nC @ 4.5V16.3ns30V2.9 ns16.8 ns15A8V-Logic Level Gate-3mm2.5mm400μmROHS3 CompliantLead Free---Golde4-140A-16.3m Ω @ 8A, 8V15A564pF @ 15V--112VSWITCHING REGULATOR4W24VPULSE WIDTH MODULATIONBUCK30V480μm
-
30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 25 A
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
-
30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A
-
30-V, N channel synchronous buck NexFET? power MOSFET, 3 mm x 2.5 mm LGA, 15 A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic... -
21 December 2023
Comprehensive Exploration of BC547 Transistor: Advantages, Uses, Specifications and Working Status
Ⅰ. BC547 descriptionⅡ. What are the advantages of BC547 transistor?Ⅲ. BC547 application circuitⅣ. Specifications of BC547Ⅴ. Working status of BC547 transistorⅥ. Absolute maximum ratings of BC547Ⅶ. What are... -
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.