Texas Instruments CSD25201W15
- Part Number:
- CSD25201W15
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3813809-CSD25201W15
- Description:
- MOSFET P-CH 20V 4A 9DSBGA
- ECAD Model:
-
- Datasheet:
- CSD25201W15
Texas Instruments CSD25201W15 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD25201W15.
- Mounting TypeSurface Mount
- Package / Case9-UFBGA, DSBGA
- Supplier Device Package9-DSBGA
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.5W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs40mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds510pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs5.6nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)-6V
- RoHS StatusROHS3 Compliant
CSD25201W15 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 510pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
CSD25201W15 Features
a 20V drain to source voltage (Vdss)
CSD25201W15 Applications
There are a lot of Rochester Electronics, LLC
CSD25201W15 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 510pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
CSD25201W15 Features
a 20V drain to source voltage (Vdss)
CSD25201W15 Applications
There are a lot of Rochester Electronics, LLC
CSD25201W15 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
CSD25201W15 More Descriptions
P-Channel NexFET™ Power MOSFET 9-DSBGA -55 to 150
MOSFET, P CH, 20V, 4A, 9DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power ;RoHS Compliant: Yes
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
MOSFET, P CH, 20V, 4A, 9DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power ;RoHS Compliant: Yes
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
The three parts on the right have similar specifications to CSD25201W15.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusContact PlatingMountNumber of PinsTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminationECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Base Part NumberPin CountNumber of ElementsConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)REACH SVHCRadiation HardeningLead FreeView Compare
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CSD25201W15Surface Mount9-UFBGA, DSBGA9-DSBGA-55°C~150°C TJTape & Reel (TR)NexFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.5W TaP-Channel40mOhm @ 2A, 4.5V1.1V @ 250μA510pF @ 10V4A Ta5.6nC @ 4.5V20V1.8V 4.5V-6VROHS3 Compliant------------------------------------ -
Surface Mount8-PowerTDFN8-VSON-CLIP (3.3x3.3)-55°C~150°C TJTape & Reel (TR)NexFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.8W TaP-Channel11.7mOhm @ 10A, 4.5V1.2V @ 250μA1.4pF @ 10V14A Ta 60A Tc12.3nC @ 4.5V20V2.5V 4.5V±12VROHS3 Compliant-----------------------------------
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Surface Mount4-UFBGA, DSBGA4-DSBGA (1x1)-55°C~150°C TJTape & Reel (TR)NexFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)1W TaP-Channel82mOhm @ 500mA, 4.5V1V @ 250μA325pF @ 6V2.2A Tc2.4nC @ 4.5V12V1.5V 4.5V-6VROHS3 Compliant-----------------------------------
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Surface Mount6-UFBGA, DSBGA--55°C~150°C TJTape & Reel (TR)NexFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.5W TaP-Channel75m Ω @ 1A, 4.5V1V @ 250μA270pF @ 10V2.2A Tc2.5nC @ 4.5V-1.5V 4.5V±8VROHS3 CompliantCopper, Silver, TinSurface Mount6SILICONe1no6SMD/SMTEAR99Tin/Silver/Copper (Sn/Ag/Cu)Other TransistorsBOTTOMBALL260CSD2530161SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE1.5W4 nsSWITCHING2ns12 ns29 ns2.2A8V0.22Ohm20V20V750 mV40 pFNo SVHCNoContains Lead
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-12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
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-8V, P channel NexFET? power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection
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-12-V, P channel NexFET? power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection
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-8V, P channel NexFET? power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection
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-12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
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