Texas Instruments CSD22202W15
- Part Number:
- CSD22202W15
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3070203-CSD22202W15
- Description:
- -8V, P channel NexFET? power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection
- ECAD Model:
-
- Datasheet:
- csd22202w15
Texas Instruments CSD22202W15 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD22202W15.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case9-UFBGA, DSBGA
- Number of Pins9
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations9
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Base Part NumberCSD22202
- Number of Elements1
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Turn On Delay Time10.4 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12.2m Ω @ 2A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1390pF @ 4V
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
- Rise Time8.4ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time109 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)-6V
- Drain to Source Breakdown Voltage8V
- Pulsed Drain Current-Max (IDM)48A
- Feedback Cap-Max (Crss)250 pF
- Height625μm
- Length1.75mm
- Width1.75mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD22202W15 Description
CSD22202W15 is a -8V P channel NexFET? power MOSFET. The CSD22202W15 is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD22202W15 ideal for battery-operated space-constrained applications.
CSD22202W15 Features
Low Resistance
Small Footprint 1.5 mm × 1.5 mm
Pb Free
Gate ESD Protection
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp
CSD22202W15 Applications
Battery Management
Battery Protection
Load Switch Applications
Electric vehicle systems
Computation
CSD22202W15 is a -8V P channel NexFET? power MOSFET. The CSD22202W15 is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD22202W15 ideal for battery-operated space-constrained applications.
CSD22202W15 Features
Low Resistance
Small Footprint 1.5 mm × 1.5 mm
Pb Free
Gate ESD Protection
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp
CSD22202W15 Applications
Battery Management
Battery Protection
Load Switch Applications
Electric vehicle systems
Computation
CSD22202W15 More Descriptions
-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection 9-DSBGA -55 to 150
Trans MOSFET P-CH Si 8V 10A 9-Pin DSBGA T/R
Power Field-Effect Transistor, 5A I(D), 8V, 0.0174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH Si 8V 10A 9-Pin DSBGA T/R
Power Field-Effect Transistor, 5A I(D), 8V, 0.0174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to CSD22202W15.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormBase Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Feedback Cap-Max (Crss)HeightLengthWidthRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Vgs (Max)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsThreshold VoltageThicknessREACH SVHCView Compare
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CSD22202W15ACTIVE (Last Updated: 6 days ago)16 WeeksCopper, Silver, TinSurface MountSurface Mount9-UFBGA, DSBGA9SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e1yesActive1 (Unlimited)9Tin/Silver/Copper (Sn/Ag/Cu)Other TransistorsMOSFET (Metal Oxide)BOTTOMBALLCSD2220211.5W TaSingleENHANCEMENT MODE1.5W10.4 nsP-ChannelSWITCHING12.2m Ω @ 2A, 4.5V1.1V @ 250μA1390pF @ 4V10A Ta8.4nC @ 4.5V8.4ns2.5V 4.5V38 ns109 ns10A-6V8V48A250 pF625μm1.75mm1.75mmROHS3 CompliantLead Free---------- -
----Surface Mount9-UFBGA, DSBGA---55°C~150°C TJTape & Reel (TR)NexFET™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----1.5W Ta----P-Channel-40mOhm @ 2A, 4.5V1.1V @ 250μA510pF @ 10V4A Ta5.6nC @ 4.5V-1.8V 4.5V----------ROHS3 Compliant-9-DSBGA20V-6V------
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ACTIVE (Last Updated: 4 days ago)6 Weeks-Surface MountSurface Mount4-UFBGA, DSBGA4SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e1yesActive1 (Unlimited)4Tin/Silver/Copper (Sn/Ag/Cu)-MOSFET (Metal Oxide)BOTTOMBALLCSD2320211W TaSingleENHANCEMENT MODE-9 nsP-ChannelSWITCHING53m Ω @ 500mA, 4.5V900mV @ 250μA512pF @ 6V2.2A Ta3.8nC @ 4.5V4ns1.5V 4.5V21 ns58 ns2.2A-6V-12V-37 pF625μm0m0mROHS3 CompliantLead Free-12V-260NOT SPECIFIED1-600mV650μmNo SVHC
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----Surface Mount8-PowerTDFN---55°C~150°C TJTape & Reel (TR)NexFET™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----2.8W Ta----P-Channel-11.7mOhm @ 10A, 4.5V1.2V @ 250μA1.4pF @ 10V14A Ta 60A Tc12.3nC @ 4.5V-2.5V 4.5V----------ROHS3 Compliant-8-VSON-CLIP (3.3x3.3)20V±12V------
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-12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
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-8V, P channel NexFET? power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection
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-12-V, P channel NexFET? power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection
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-8V, P channel NexFET? power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection
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-12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
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