CPC5602CTR

IXYS Integrated Circuits Division CPC5602CTR

Part Number:
CPC5602CTR
Manufacturer:
IXYS Integrated Circuits Division
Ventron No:
2478617-CPC5602CTR
Description:
MOSFET N-CH 350V 5MA SOT-223
ECAD Model:
Datasheet:
CPC5602CTR

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Specifications
IXYS Integrated Circuits Division CPC5602CTR technical specifications, attributes, parameters and parts with similar specifications to IXYS Integrated Circuits Division CPC5602CTR.
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Supplier Device Package
    SOT-223
  • Weight
    250.212891mg
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    14Ohm
  • Max Operating Temperature
    85°C
  • Min Operating Temperature
    -40°C
  • Voltage - Rated DC
    350V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    5mA
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Power Dissipation
    2.5W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    14Ohm @ 50mA, 350mV
  • Current - Continuous Drain (Id) @ 25°C
    5mA Ta
  • Drain to Source Voltage (Vdss)
    350V
  • Drive Voltage (Max Rds On,Min Rds On)
    -0.35V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    350V
  • Input Capacitance
    300pF
  • FET Feature
    Depletion Mode
  • Drain to Source Resistance
    14Ohm
  • Rds On Max
    14 Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CPC5602CTR Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5mA.With a drain-source breakdown voltage of 350V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 350V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 14Ohm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 350V.Using drive voltage (-0.35V) reduces this device's overall power consumption.

CPC5602CTR Features
a continuous drain current (ID) of 5mA
a drain-to-source breakdown voltage of 350V voltage
single MOSFETs transistor is 14Ohm
a 350V drain to source voltage (Vdss)


CPC5602CTR Applications
There are a lot of IXYS Integrated Circuits Division
CPC5602CTR applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
CPC5602CTR More Descriptions
Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3 Tab) SOT-223 T/R
CPC Series 350 V 5 mA N-Channel Surface Mount Depletion Mode FET - SOT-223
Transistor,Mosfet,N-Channel,350V V(Br)Dss,Sot-223
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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