Infineon Technologies BUZ73

Name: BUZ73
Brand: Infineon Technologies
SKU: 2853443-BUZ73
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUZ73

Manufacturer:: Infineon Technologies

Ventron No:: 2853443-BUZ73

Description:: MOSFET N-CH 200V 7A TO-220AB

ECAD Model:

Datasheet:: BUZ73

Specifications

Infineon Technologies BUZ73 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BUZ73.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SIPMOS®
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
7A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
40W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
530pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
7A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.4Ohm
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
28A
Avalanche Energy Rating (Eas)
120 mJ
Nominal Vgs
3 V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead

Description

BUZ73 Description
The BUZ73 Power Transistor is a SIPMOS? Power Transistor.

BUZ73 Features
N channel
Enhancement mode
Avalanche-rated

BUZ73 Applications
Body & Convenience

BUZ73 More Descriptions

INFINEON BUZ73 / MOSFET INFINEON TO-220-UP 200V
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:7A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes

Certification