STMicroelectronics BU508AF

Name: BU508AF
Brand: STMicroelectronics
SKU: 2465478-BU508AF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BU508AF

Manufacturer:: STMicroelectronics

Ventron No:: 2465478-BU508AF

Description:: TRANS NPN 700V 8A ISOWATT218FX

ECAD Model:

Datasheet:: BU508AF

Specifications

STMicroelectronics BU508AF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU508AF.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
50W
Base Part Number
BU508
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 4.5A
Collector Emitter Breakdown Voltage
700V
Collector Base Voltage (VCBO)
9V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.

BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V

BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BU508AF More Descriptions

Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 700V 8A 50000mW 3-Pin(3 Tab) ISOWATT218FX Tube
BU508 Series NPN 8 A 700 V 50 W Power Transistor - ISOWATT218FX
Bipolar Transistors - BJT NPN Power Transistor
High voltage NPN power transistor for standard definition CRT display
Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity:Npn; Collector Emitter Voltage Max:700V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics BU508AF

Product Comparison

The three parts on the right have similar specifications to BU508AF.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Collector Emitter Saturation Voltage

hFE Min

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

View Compare
BU508AF

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

ISOWATT218FX

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

50W

BU508

3

1

Single

50W

ISOLATED

SWITCHING

NPN

NPN

700V

8A

10 @ 100mA 5V

200μA

1V @ 1.6A, 4.5A

700V

9V

9V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BU508AFTBTU

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-3P-3 Full Pack

-

-

150°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

BU508

-

-

-

-

-

-

-

NPN

-

-

2.25 @ 4.5A 5V

1mA

1V @ 2A, 4.5A

-

-

-

-

-

-

TO-3PF

60W

700V

5A

-

-

-

-

-

-

-

-

BU508AF vs BU508AFTBTU
BU508A

STMicroelectronics

-

-

-

-

Through Hole

TO-247-3

-

-

150°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

NPN

-

-

-

1mA

1V @ 2A, 4.5A

-

-

-

-

Non-RoHS Compliant

-

TO-247-3

125W

700V

8A

7MHz

-

-

-

-

-

-

-

BU508AF vs BU508A
BU508AW

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

125W

BU508

3

1

Single

125W

-

SWITCHING

NPN

NPN

700V

8A

10 @ 100mA 5V

200μA

1V @ 1.6A, 4.5A

700V

-

9V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

1V

10

150°C

24.45mm

15.75mm

5.15mm

No SVHC

BU508AF vs BU508AW