STMicroelectronics BU508AFI
- Part Number:
- BU508AFI
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2847037-BU508AFI
- Description:
- TRANS NPN 700V 8A ISOWATT218
- Datasheet:
- BU208A, BU508A(FI)
STMicroelectronics BU508AFI technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU508AFI.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOWATT-218-3
- Number of Pins218
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC700V
- Max Power Dissipation50W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating8A
- Frequency7MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBU508
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation50W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product7MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)700V
- Max Collector Current8A
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1V @ 2A, 4.5A
- Collector Emitter Breakdown Voltage700V
- Transition Frequency7MHz
- Emitter Base Voltage (VEBO)10V
- DC Current Gain-Min (hFE)10
- VCEsat-Max1 V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BU508AFI Overview
Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 2A, 4.5A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 7MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BU508AFI Features
the vce saturation(Max) is 1V @ 2A, 4.5A
the emitter base voltage is kept at 10V
the current rating of this device is 8A
a transition frequency of 7MHz
BU508AFI Applications
There are a lot of STMicroelectronics
BU508AFI applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 2A, 4.5A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 7MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BU508AFI Features
the vce saturation(Max) is 1V @ 2A, 4.5A
the emitter base voltage is kept at 10V
the current rating of this device is 8A
a transition frequency of 7MHz
BU508AFI Applications
There are a lot of STMicroelectronics
BU508AFI applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BU508AFI More Descriptions
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN General Purpose
TRANSISTOR, NPN SOT-93A; Transistor Type:Power High Voltage Switching; Transistor Polarity:NPN; Voltage, Vceo:700V; Current, Ic Continuous a Max:8A; Voltage, Vce Sat Max:1V; Hfe, Min:4; ft, Typ:7MHz; Case Style:ISOWATT-218; Current, Ic @ Vce Sat:4.5A; Current, Ic Max:15A; Current, Ic av:8A; Pins, No. of:3; Pitch, Lead:5.45mm; Power, Ptot:50W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Isolation:1500V; Voltage, Vcbo:1500V; Voltage, Vces:1500V
Bipolar Transistors - BJT NPN General Purpose
TRANSISTOR, NPN SOT-93A; Transistor Type:Power High Voltage Switching; Transistor Polarity:NPN; Voltage, Vceo:700V; Current, Ic Continuous a Max:8A; Voltage, Vce Sat Max:1V; Hfe, Min:4; ft, Typ:7MHz; Case Style:ISOWATT-218; Current, Ic @ Vce Sat:4.5A; Current, Ic Max:15A; Current, Ic av:8A; Pins, No. of:3; Pitch, Lead:5.45mm; Power, Ptot:50W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Isolation:1500V; Voltage, Vcbo:1500V; Voltage, Vces:1500V
The three parts on the right have similar specifications to BU508AFI.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyEmitter Base Voltage (VEBO)DC Current Gain-Min (hFE)VCEsat-MaxRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionLifecycle StatusFactory Lead TimeContact PlatingDC Current Gain (hFE) (Min) @ Ic, VceCollector Base Voltage (VCBO)Radiation HardeningCollector Emitter Saturation VoltagehFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCView Compare
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BU508AFIThrough HoleThrough HoleISOWATT-218-3218SILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors700V50WNOT SPECIFIEDnot_compliant8A7MHzNOT SPECIFIEDBU5083R-PSFM-T3Not Qualified1Single50WISOLATEDSWITCHING7MHzNPNNPN700V8A1mA1V @ 2A, 4.5A700V7MHz10V101 VROHS3 CompliantLead Free-------------------
-
-Through HoleTO-247-3--150°C TJTube-Obsolete1 (Unlimited)----------------------NPN--1mA1V @ 2A, 4.5A-----Non-RoHS Compliant-TO-247-3125W700V8A7MHz-------------
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Through HoleThrough HoleISOWATT218FX3SILICON150°C TJTubee3Active1 (Unlimited)3EAR99-Other Transistors-50W-----BU5083--1Single50WISOLATEDSWITCHING-NPNNPN700V8A200μA1V @ 1.6A, 4.5A700V-9V--ROHS3 CompliantLead Free-----ACTIVE (Last Updated: 7 months ago)8 WeeksTin10 @ 100mA 5V9VNo-------
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Through HoleThrough HoleTO-247-33SILICON150°C TJTubee3Active1 (Unlimited)3EAR99-Other Transistors-125W-----BU5083--1Single125W-SWITCHING-NPNNPN700V8A200μA1V @ 1.6A, 4.5A700V-9V--ROHS3 CompliantLead Free-----ACTIVE (Last Updated: 8 months ago)8 WeeksTin10 @ 100mA 5V-No1V10150°C24.45mm15.75mm5.15mmNo SVHC
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