BU508AFI

STMicroelectronics BU508AFI

Part Number:
BU508AFI
Manufacturer:
STMicroelectronics
Ventron No:
2847037-BU508AFI
Description:
TRANS NPN 700V 8A ISOWATT218
ECAD Model:
Datasheet:
BU208A, BU508A(FI)

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics BU508AFI technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU508AFI.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOWATT-218-3
  • Number of Pins
    218
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    700V
  • Max Power Dissipation
    50W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    8A
  • Frequency
    7MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BU508
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    50W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    7MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    700V
  • Max Collector Current
    8A
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 2A, 4.5A
  • Collector Emitter Breakdown Voltage
    700V
  • Transition Frequency
    7MHz
  • Emitter Base Voltage (VEBO)
    10V
  • DC Current Gain-Min (hFE)
    10
  • VCEsat-Max
    1 V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BU508AFI Overview
Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 2A, 4.5A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 7MHz is present in the part.Collector current can be as low as 8A volts at its maximum.

BU508AFI Features
the vce saturation(Max) is 1V @ 2A, 4.5A
the emitter base voltage is kept at 10V
the current rating of this device is 8A
a transition frequency of 7MHz


BU508AFI Applications
There are a lot of STMicroelectronics
BU508AFI applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BU508AFI More Descriptions
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN General Purpose
TRANSISTOR, NPN SOT-93A; Transistor Type:Power High Voltage Switching; Transistor Polarity:NPN; Voltage, Vceo:700V; Current, Ic Continuous a Max:8A; Voltage, Vce Sat Max:1V; Hfe, Min:4; ft, Typ:7MHz; Case Style:ISOWATT-218; Current, Ic @ Vce Sat:4.5A; Current, Ic Max:15A; Current, Ic av:8A; Pins, No. of:3; Pitch, Lead:5.45mm; Power, Ptot:50W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Isolation:1500V; Voltage, Vcbo:1500V; Voltage, Vces:1500V
Product Comparison
The three parts on the right have similar specifications to BU508AFI.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Emitter Base Voltage (VEBO)
    DC Current Gain-Min (hFE)
    VCEsat-Max
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Collector Base Voltage (VCBO)
    Radiation Hardening
    Collector Emitter Saturation Voltage
    hFE Min
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • BU508AFI
    BU508AFI
    Through Hole
    Through Hole
    ISOWATT-218-3
    218
    SILICON
    150°C TJ
    Tube
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    700V
    50W
    NOT SPECIFIED
    not_compliant
    8A
    7MHz
    NOT SPECIFIED
    BU508
    3
    R-PSFM-T3
    Not Qualified
    1
    Single
    50W
    ISOLATED
    SWITCHING
    7MHz
    NPN
    NPN
    700V
    8A
    1mA
    1V @ 2A, 4.5A
    700V
    7MHz
    10V
    10
    1 V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BU508A
    -
    Through Hole
    TO-247-3
    -
    -
    150°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    1mA
    1V @ 2A, 4.5A
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    TO-247-3
    125W
    700V
    8A
    7MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BU508AF
    Through Hole
    Through Hole
    ISOWATT218FX
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    -
    50W
    -
    -
    -
    -
    -
    BU508
    3
    -
    -
    1
    Single
    50W
    ISOLATED
    SWITCHING
    -
    NPN
    NPN
    700V
    8A
    200μA
    1V @ 1.6A, 4.5A
    700V
    -
    9V
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    10 @ 100mA 5V
    9V
    No
    -
    -
    -
    -
    -
    -
    -
  • BU508AW
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    -
    125W
    -
    -
    -
    -
    -
    BU508
    3
    -
    -
    1
    Single
    125W
    -
    SWITCHING
    -
    NPN
    NPN
    700V
    8A
    200μA
    1V @ 1.6A, 4.5A
    700V
    -
    9V
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    10 @ 100mA 5V
    -
    No
    1V
    10
    150°C
    24.45mm
    15.75mm
    5.15mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.