STMicroelectronics BU508AW

Name: BU508AW
Brand: STMicroelectronics
SKU: 2463276-BU508AW
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BU508AW

Manufacturer:: STMicroelectronics

Ventron No:: 2463276-BU508AW

Description:: TRANS NPN 700V 8A TO-247

ECAD Model:

Datasheet:: BU508AW

Specifications

STMicroelectronics BU508AW technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU508AW.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
125W
Base Part Number
BU508
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 4.5A
Collector Emitter Breakdown Voltage
700V
Collector Emitter Saturation Voltage
1V
Emitter Base Voltage (VEBO)
9V
hFE Min
10
Max Junction Temperature (Tj)
150°C
Height
24.45mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.

BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V

BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BU508AW More Descriptions

Bipolar Transistors - BJT Hi Vltg NPN Pwr transistor
High voltage NPN power transistor for standard definition CRT display
BU508AW Series NPN 700 V 8 A High Voltage Power Transistor - TO-247
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3 Tab) TO-247 Tube
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Power Transistor for CRT Displays, TO-247, NPN, 1.5kV
Transistor NPN, TO-247-3 700V 8AThrough Hole
TRANSISTOR, NPN, 700V, 8A, TO-247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 700V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Cas

Product Comparison

The three parts on the right have similar specifications to BU508AW.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Case Connection

Collector Base Voltage (VCBO)

View Compare
BU508AW

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

125W

BU508

3

1

Single

125W

SWITCHING

NPN

NPN

700V

8A

10 @ 100mA 5V

200μA

1V @ 1.6A, 4.5A

700V

1V

9V

10

150°C

24.45mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
BU508AFTBTU

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-3P-3 Full Pack

-

-

150°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

BU508

-

-

-

-

-

-

NPN

-

-

2.25 @ 4.5A 5V

1mA

1V @ 2A, 4.5A

-

-

-

-

-

-

-

-

-

-

-

-

TO-3PF

60W

700V

5A

-

-

-

BU508AW vs BU508AFTBTU
BU508A

STMicroelectronics

-

-

-

-

Through Hole

TO-247-3

-

-

150°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

NPN

-

-

-

1mA

1V @ 2A, 4.5A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TO-247-3

125W

700V

8A

7MHz

-

-

BU508AW vs BU508A
BU508AF

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

ISOWATT218FX

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

50W

BU508

3

1

Single

50W

SWITCHING

NPN

NPN

700V

8A

10 @ 100mA 5V

200μA

1V @ 1.6A, 4.5A

700V

-

9V

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

ISOLATED

9V

BU508AW vs BU508AF