STMicroelectronics BU508A
- Part Number:
- BU508A
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465885-BU508A
- Description:
- TRANS NPN 700V 8A TO-247
- Datasheet:
- BU208A, BU508A(FI)
STMicroelectronics BU508A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU508A.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackageTO-247-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max125W
- Transistor TypeNPN
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1V @ 2A, 4.5A
- Voltage - Collector Emitter Breakdown (Max)700V
- Current - Collector (Ic) (Max)8A
- Frequency - Transition7MHz
- RoHS StatusNon-RoHS Compliant
BU508A Overview
A VCE saturation (Max) of 1V @ 2A, 4.5A means Ic has reached its maximum value(saturated).Product package TO-247-3 comes from the supplier.Collector Emitter Breakdown occurs at 700VV - Maximum voltage.
BU508A Features
the vce saturation(Max) is 1V @ 2A, 4.5A
the supplier device package of TO-247-3
BU508A Applications
There are a lot of Rochester Electronics, LLC
BU508A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A VCE saturation (Max) of 1V @ 2A, 4.5A means Ic has reached its maximum value(saturated).Product package TO-247-3 comes from the supplier.Collector Emitter Breakdown occurs at 700VV - Maximum voltage.
BU508A Features
the vce saturation(Max) is 1V @ 2A, 4.5A
the supplier device package of TO-247-3
BU508A Applications
There are a lot of Rochester Electronics, LLC
BU508A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BU508A More Descriptions
Transistor NPN BU508A/BU508AF PHILIPS Ampere=8 V=700 TO3PHalfin
Trans GP BJT NPN 700V 8A 3-Pin(3 Tab) TO-218
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
French Electronic Distributor since 1988
Trans GP BJT NPN 700V 8A 3-Pin(3 Tab) TO-218
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BU508A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusBase Part NumberDC Current Gain (hFE) (Min) @ Ic, VceLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeSubcategoryMax Power DissipationPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningLead FreeCollector Emitter Saturation VoltagehFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCView Compare
-
BU508AThrough HoleTO-247-3TO-247-3150°C TJTubeObsolete1 (Unlimited)125WNPN1mA1V @ 2A, 4.5A700V8A7MHzNon-RoHS Compliant-----------------------------------
-
Through HoleTO-3P-3 Full PackTO-3PF150°C TJTubeObsolete1 (Unlimited)60WNPN1mA1V @ 2A, 4.5A700V5A--BU5082.25 @ 4.5A 5V--------------------------------
-
Through HoleISOWATT218FX-150°C TJTubeActive1 (Unlimited)-NPN200μA1V @ 1.6A, 4.5A---ROHS3 CompliantBU50810 @ 100mA 5VACTIVE (Last Updated: 7 months ago)8 WeeksTinThrough Hole3SILICONe33EAR99Other Transistors50W31Single50WISOLATEDSWITCHINGNPN700V8A700V9V9VNoLead Free-------
-
Through HoleTO-247-3-150°C TJTubeActive1 (Unlimited)-NPN200μA1V @ 1.6A, 4.5A---ROHS3 CompliantBU50810 @ 100mA 5VACTIVE (Last Updated: 8 months ago)8 WeeksTinThrough Hole3SILICONe33EAR99Other Transistors125W31Single125W-SWITCHINGNPN700V8A700V-9VNoLead Free1V10150°C24.45mm15.75mm5.15mmNo SVHC
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