Infineon Technologies BSZ0902NSI

Name: BSZ0902NSI
Brand: Infineon Technologies
SKU: 2482391-BSZ0902NSI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSZ0902NSI

Manufacturer:: Infineon Technologies

Ventron No:: 2482391-BSZ0902NSI

Description:: MOSFET N-CH 30V 21A TSDSON-8

ECAD Model:

Datasheet:: BSZ0902NSI

Specifications

Infineon Technologies BSZ0902NSI technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ0902NSI.

Package / Case
PG-TSDSON-8
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

BSZ0902NSI Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSZ0902NSI or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSZ0902NSI. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to BSZ0902NSI.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Pbfree Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Power Dissipation

Turn On Delay Time

Fall Time (Typ)

Turn-Off Delay Time

Drain-source On Resistance-Max

Additional Feature

View Compare
BSZ0902NSI

Infineon Technologies

PG-TSDSON-8

Tape & Reel (TR)

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSZ068N06NSATMA1

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

ROHS3 Compliant

18 Weeks

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2012

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

S-PDSO-N3

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 46W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.8m Ω @ 20A, 10V

3.3V @ 20μA

Halogen Free

1500pF @ 30V

40A Tc

21nC @ 10V

3ns

6V 10V

±20V

40A

20V

60V

160A

43 mJ

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

BSZ0902NSI vs BSZ068N06NSATMA1
BSZ076N06NS3GATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

ROHS3 Compliant

-

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2009

e3

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

S-PDSO-N5

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7.6m Ω @ 20A, 10V

4V @ 35μA

Halogen Free

4000pF @ 30V

20A Tc

50nC @ 10V

40ns

10V

±20V

20A

20V

60V

-

-

Contains Lead

no

NOT SPECIFIED

NOT SPECIFIED

8

Not Qualified

2.1W

15 ns

5 ns

20 ns

0.0076Ohm

-

BSZ0902NSI vs BSZ076N06NS3GATMA1
BSZ042N04NSGATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

ROHS3 Compliant

18 Weeks

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2003

e3

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

R-PDSO-N5

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.2m Ω @ 20A, 10V

4V @ 36μA

Halogen Free

3700pF @ 20V

40A Tc

46nC @ 10V

3.4ns

10V

±20V

40A

20V

40V

160A

150 mJ

Contains Lead

no

NOT SPECIFIED

NOT SPECIFIED

8

Not Qualified

69W

14 ns

4.2 ns

20 ns

0.0042Ohm

AVALANCHE RATED, HIGH VOLTAGE

BSZ0902NSI vs BSZ042N04NSGATMA1