Infineon Technologies BSZ060NE2LS

Name: BSZ060NE2LS
Brand: Infineon Technologies
SKU: 3554120-BSZ060NE2LS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSZ060NE2LS

Manufacturer:: Infineon Technologies

Ventron No:: 3554120-BSZ060NE2LS

Description:: MOSFET N-CH 25V 12A TSDSON-8

ECAD Model:

Datasheet:: BSZ060NE2LS

Specifications

Infineon Technologies BSZ060NE2LS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ060NE2LS.

Package / Case
PG-TSDSON-8
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

BSZ060NE2LS Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSZ060NE2LS or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSZ060NE2LS. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to BSZ060NE2LS.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Additional Feature

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
BSZ060NE2LS

Infineon Technologies

PG-TSDSON-8

Tape & Reel (TR)

RoHS Compliant

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BSZ076N06NS3GATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

ROHS3 Compliant

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2009

e3

no

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

S-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

2.1W

DRAIN

15 ns

N-Channel

SWITCHING

7.6m Ω @ 20A, 10V

4V @ 35μA

Halogen Free

4000pF @ 30V

20A Tc

50nC @ 10V

40ns

10V

±20V

5 ns

20 ns

20A

20V

60V

0.0076Ohm

Contains Lead

-

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-

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-

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-

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-

BSZ060NE2LS vs BSZ076N06NS3GATMA1
BSZ042N04NS G

Infineon Technologies

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4V @ 36µA

MOSFET (Metal Oxide)

PG-TSDSON-8

OptiMOS™

4.2 mOhm @ 20A, 10V

2.1W (Ta), 69W (Tc)

Cut Tape (CT)

8-PowerVDFN

-55°C ~ 150°C (TJ)

Surface Mount

3700pF @ 20V

46nC @ 10V

N-Channel

-

40V

40A (Tc)

-

-

-

-

BSZ060NE2LS vs BSZ042N04NS G
BSZ042N04NSGATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

ROHS3 Compliant

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2003

e3

no

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

69W

DRAIN

14 ns

N-Channel

SWITCHING

4.2m Ω @ 20A, 10V

4V @ 36μA

Halogen Free

3700pF @ 20V

40A Tc

46nC @ 10V

3.4ns

10V

±20V

4.2 ns

20 ns

40A

20V

40V

0.0042Ohm

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

18 Weeks

AVALANCHE RATED, HIGH VOLTAGE

160A

150 mJ

BSZ060NE2LS vs BSZ042N04NSGATMA1