Infineon Technologies BSZ067N06LS3 G
- Part Number:
- BSZ067N06LS3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849252-BSZ067N06LS3 G
- Description:
- MOSFET N-CH 60V 20A TSDSON-8
- Datasheet:
- BSZ067N06LS3 G
Infineon Technologies BSZ067N06LS3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ067N06LS3 G.
- Package / CasePG-TSDSON-8
- PackagingTape & Reel (TR)
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs6.7mΩ @ 20A,10V
- Vgs(th) (Max) @ Id2.2V @ 35uA
- Drain to Source Voltage (Vdss)60V
- Continuous Drain Current (Id) @ 25°C20A Tc
- Power Dissipation-Max (Ta=25°C)69W Tc
- RoHS StatusRoHS Compliant
BSZ067N06LS3 G Description
BSZ067N06LS3 G is a 60V OptiMOS™ 3 Power-Transistor. An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor BSZ067N06LS3 G in the TSDSON-8 package with 69W power dissipation.
BSZ067N06LS3 G Features
Ideal for high-frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x RDs(on) product (FOM) Very low on-resistance RDs(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21
BSZ067N06LS3 G Applications
Communications equipment Wireless infrastructure Industrial Grid infrastructure Enterprise systems Datacenter & enterprise computing
BSZ067N06LS3 G is a 60V OptiMOS™ 3 Power-Transistor. An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor BSZ067N06LS3 G in the TSDSON-8 package with 69W power dissipation.
BSZ067N06LS3 G Features
Ideal for high-frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x RDs(on) product (FOM) Very low on-resistance RDs(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21
BSZ067N06LS3 G Applications
Communications equipment Wireless infrastructure Industrial Grid infrastructure Enterprise systems Datacenter & enterprise computing
The three parts on the right have similar specifications to BSZ067N06LS3 G.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusMountMounting TypeNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Factory Lead TimeAdditional FeaturePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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BSZ067N06LS3 GPG-TSDSON-8Tape & Reel (TR)N Channel6.7mΩ @ 20A,10V2.2V @ 35uA60V20A Tc69W TcRoHS Compliant------------------------------------------------------------------
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8-PowerVDFNTape & Reel (TR)N-Channel7.6m Ω @ 20A, 10V4V @ 35μA---ROHS3 CompliantSurface MountSurface Mount8SILICON-55°C~150°C TJOptiMOS™2009e3noObsolete1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIED8S-PDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE2.1W Ta 69W TcENHANCEMENT MODE2.1WDRAIN15 nsSWITCHINGHalogen Free4000pF @ 30V20A Tc50nC @ 10V40ns10V±20V5 ns20 ns20A20V60V0.0076OhmContains Lead--------------------
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------------------------------------------------------4V @ 36µAMOSFET (Metal Oxide)PG-TSDSON-8OptiMOS™4.2 mOhm @ 20A, 10V2.1W (Ta), 69W (Tc)Cut Tape (CT)8-PowerVDFN-55°C ~ 150°C (TJ)Surface Mount3700pF @ 20V46nC @ 10VN-Channel-40V40A (Tc)----
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8-PowerVDFNTape & Reel (TR)N-Channel4.2m Ω @ 20A, 10V4V @ 36μA---ROHS3 CompliantSurface MountSurface Mount8SILICON-55°C~150°C TJOptiMOS™2003e3noObsolete1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIED8R-PDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE2.1W Ta 69W TcENHANCEMENT MODE69WDRAIN14 nsSWITCHINGHalogen Free3700pF @ 20V40A Tc46nC @ 10V3.4ns10V±20V4.2 ns20 ns40A20V40V0.0042OhmContains Lead----------------18 WeeksAVALANCHE RATED, HIGH VOLTAGE160A150 mJ
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