Infineon Technologies BSZ067N06LS3 G

Name: BSZ067N06LS3 G
Brand: Infineon Technologies
SKU: 2849252-BSZ067N06LS3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSZ067N06LS3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2849252-BSZ067N06LS3 G

Description:: MOSFET N-CH 60V 20A TSDSON-8

ECAD Model:

Datasheet:: BSZ067N06LS3 G

Specifications

Infineon Technologies BSZ067N06LS3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ067N06LS3 G.

Package / Case
PG-TSDSON-8
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
6.7mΩ @ 20A,10V
Vgs(th) (Max) @ Id
2.2V @ 35uA
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (Id) @ 25°C
20A Tc
Power Dissipation-Max (Ta=25°C)
69W Tc
RoHS Status
RoHS Compliant

Description

BSZ067N06LS3 G Description
BSZ067N06LS3 G is a 60V OptiMOS™ 3 Power-Transistor. An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor BSZ067N06LS3 G in the TSDSON-8 package with 69W power dissipation.

BSZ067N06LS3 G Features
Ideal for high-frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x RDs(on) product (FOM) Very low on-resistance RDs(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21

BSZ067N06LS3 G Applications
Communications equipment Wireless infrastructure Industrial Grid infrastructure Enterprise systems Datacenter & enterprise computing

Product Comparison

The three parts on the right have similar specifications to BSZ067N06LS3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Additional Feature

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
BSZ067N06LS3 G

Infineon Technologies

PG-TSDSON-8

Tape & Reel (TR)

N Channel

6.7mΩ @ 20A,10V

2.2V @ 35uA

60V

20A Tc

69W Tc

RoHS Compliant

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BSZ076N06NS3GATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

N-Channel

7.6m Ω @ 20A, 10V

4V @ 35μA

-

-

-

ROHS3 Compliant

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2009

e3

no

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

S-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

2.1W

DRAIN

15 ns

SWITCHING

Halogen Free

4000pF @ 30V

20A Tc

50nC @ 10V

40ns

10V

±20V

5 ns

20 ns

20A

20V

60V

0.0076Ohm

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSZ067N06LS3 G vs BSZ076N06NS3GATMA1
BSZ042N04NS G

Infineon Technologies

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4V @ 36µA

MOSFET (Metal Oxide)

PG-TSDSON-8

OptiMOS™

4.2 mOhm @ 20A, 10V

2.1W (Ta), 69W (Tc)

Cut Tape (CT)

8-PowerVDFN

-55°C ~ 150°C (TJ)

Surface Mount

3700pF @ 20V

46nC @ 10V

N-Channel

-

40V

40A (Tc)

-

-

-

-

BSZ067N06LS3 G vs BSZ042N04NS G
BSZ042N04NSGATMA1

Infineon Technologies

8-PowerVDFN

Tape & Reel (TR)

N-Channel

4.2m Ω @ 20A, 10V

4V @ 36μA

-

-

-

ROHS3 Compliant

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2003

e3

no

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 69W Tc

ENHANCEMENT MODE

69W

DRAIN

14 ns

SWITCHING

Halogen Free

3700pF @ 20V

40A Tc

46nC @ 10V

3.4ns

10V

±20V

4.2 ns

20 ns

40A

20V

40V

0.0042Ohm

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

18 Weeks

AVALANCHE RATED, HIGH VOLTAGE

160A

150 mJ

BSZ067N06LS3 G vs BSZ042N04NSGATMA1