Infineon Technologies BSS209PWH6327XTSA1

Name: BSS209PWH6327XTSA1
Brand: Infineon Technologies
SKU: 3554154-BSS209PWH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS209PWH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3554154-BSS209PWH6327XTSA1

Description:: MOSFET P-CH 20V 0.63A SOT-323

ECAD Model:

Datasheet:: BSS209PWH6327XTSA1

Specifications

Infineon Technologies BSS209PWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS209PWH6327XTSA1.

Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
OptiMOS™
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-580mA
Pin Count
3
Number of Elements
1
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
26 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
550m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.5μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
115pF @ 15V
Current - Continuous Drain (Id) @ 25°C
630mA Tc
Gate Charge (Qg) (Max) @ Vgs
1.3nC @ 4.5V
Rise Time
7ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
4.6 ns
Turn-Off Delay Time
6 ns
Continuous Drain Current (ID)
580mA
Gate to Source Voltage (Vgs)
12V
Max Dual Supply Voltage
-20V
Drain-source On Resistance-Max
0.55Ohm
Feedback Cap-Max (Crss)
45 pF
Height
800μm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS209PWH6327XTSA1 Description
Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) idea, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. A fast switching SJ MOSFET with extraordinary ease of operation offers reduced ringing, superior body diode lifespan against harsh commutation, and excellent ESD performance.

BSS209PWH6327XTSA1 Features
?P-Channel
? Mode of enhancement
? Level of Super Logic ( 2.5 V rated)
? Operating temperature of 150°C
? Avalanche danger level

BSS209PWH6327XTSA1 Applications
Switching applications

BSS209PWH6327XTSA1 More Descriptions

Single P-Channel 20 V 550 mOhm 1 nC OptiMOS Small Signal Mosfet - SOT-323
MOSFET, P-CH, -20V, -0.63A, SOT-323-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-630mA; Source Voltage Vds:-20V; On
MOSFET, P-CH, -20V, -0.63A, SOT-323-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -630mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.379ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Certification